A1941 POWER TRANSISTOR Search Results

A1941 POWER TRANSISTOR Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

A1941 POWER TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
a1941 Abstract: C5198 Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company POWER TRANSISTORS A1941 C5198 9TW (9TW) PNP NPN TO- 3PN Non Isolated Plastic Package Power Amplifier Applications. ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise )	Original	PDF	A1941 C5198 C-120 250706E a1941 C5198
C5198 Abstract: a1941 A1941 C5198 application notes a1941 specifications A1941 C5198 C5198 transistor equivalent 250706E A1941 equivalent transistor a1941 application notes A1941 C5198 Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company POWER TRANSISTORS A1941 C5198 9TW (9TW) PNP NPN TO- 3PN Non Isolated Plastic Package Power Amplifier Applications. ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise )	Original	PDF	A1941 C5198 C-120 250706E C5198 a1941 A1941 C5198 application notes a1941 specifications A1941 C5198 C5198 transistor equivalent 250706E A1941 equivalent transistor a1941 application notes A1941 C5198
Toshiba transistor a1941 Abstract: A1941 toshiba a1941 transistor a1941 A194 Toshiba transistor 2SC5198 Toshiba transistor A1941 base collector and emitter A1941 TRANSISTOR 2SA1941 equivalent 2sc5198 Text: 2SA1941 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1941 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −140 V min • Complementary to 2SC5198 • Recommended for 70-W high-fidelity audio frequency amplifier output stage.	Original	PDF	2SA1941 2SC5198 Toshiba transistor a1941 A1941 toshiba a1941 transistor a1941 A194 Toshiba transistor 2SC5198 Toshiba transistor A1941 base collector and emitter A1941 TRANSISTOR 2SA1941 equivalent 2sc5198
a1941 Abstract: Toshiba transistor A1941 A1941 TRANSISTOR transistor a1941 a1941 power transistor Toshiba transistor 2SC5198 A1941 data sheet a1941 specifications toshiba a1941 2SA1941 equivalent Text: 2SA1941 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1941 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −140 V min • Complementary to 2SC5198 • Recommended for 70-W high-fidelity audio frequency amplifier output stage.	Original	PDF	2SA1941 2SC5198 a1941 Toshiba transistor A1941 A1941 TRANSISTOR transistor a1941 a1941 power transistor Toshiba transistor 2SC5198 A1941 data sheet a1941 specifications toshiba a1941 2SA1941 equivalent
Toshiba transistor A1941 Abstract: a1941 A1941 TRANSISTOR toshiba a1941 A1941 TOSHIBA transistor a1941 a1941 specifications Text: 2SA1941 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1941 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −140 V min • Complementary to 2SC5198 • Recommended for 70-W high-fidelity audio frequency amplifier output stage.	Original	PDF	2SA1941 2SC5198 2-16C1A Toshiba transistor A1941 a1941 A1941 TRANSISTOR toshiba a1941 A1941 TOSHIBA transistor a1941 a1941 specifications
A1941 TRANSISTOR Abstract: No abstract text available Text: 2SA1941 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1941 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −140 V min • Complementary to 2SC5198 • Recommended for 70-W high-fidelity audio frequency amplifier output stage.	Original	PDF	2SA1941 2SC5198 A1941 TRANSISTOR
Untitled Abstract: No abstract text available Text: 2SA1941 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1941 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −140 V min • Complementary to 2SC5198 • Recommended for 70-W high-fidelity audio frequency amplifier output stage.	Original	PDF	2SA1941 2SC5198
Toshiba transistor A1941 Abstract: a1941 2SA1941 datasheet toshiba a1941 Toshiba transistor 2SA1941 A1941 TRANSISTOR Toshiba transistor 2SC5198 transistor a1941 A1941 circuits a1941 specifications Text: 2SA1941 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1941 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −140 V min • Complementary to 2SC5198 • Recommended for 70-W high-fidelity audio frequency amplifier output stage.	Original	PDF	2SA1941 2SC5198 Toshiba transistor A1941 a1941 2SA1941 datasheet toshiba a1941 Toshiba transistor 2SA1941 A1941 TRANSISTOR Toshiba transistor 2SC5198 transistor a1941 A1941 circuits a1941 specifications
TRANSISTOR BC337 SMD Abstract: transistor BC170 C5198 CDIL 2N2222A Transistor bd139 smd bc337 SMD PACKAGE bd140 SMD equivalent BC109 BC184 BC549 a1941 CDIL BD139 Text: • Transistors • • • • • Small Signal Medium Power Power Darlington MOSFET CDIL Semiconductors ~ Worldwide Reach Product Profile Transistors Product Range • • Chips/Dice – Diffused Silicon Wafers Surface Mount and Leaded Semiconductor Devices	Original	PDF	MPSA45 P2N2369 PN2222 MPSA05 MPSA55 P2N2369A PN2222A MPS2907A MPSA06 MPSA56 TRANSISTOR BC337 SMD transistor BC170 C5198 CDIL 2N2222A Transistor bd139 smd bc337 SMD PACKAGE bd140 SMD equivalent BC109 BC184 BC549 a1941 CDIL BD139
DIAC DB2 Abstract: BD469 C2N3904 pin configuration transistor BC547 smd packaging C2N5551 cbc337 D1 DB2 Diac SMD SOT23 transistor MARK Y2 A1941 1N4007 MINI MELF Text: Quick Reference Data Wafer Fabrication Surface Mounted Devices Leaded Semiconductor Devices Electronic Manufacturing Services Switching Diodes & Arrays Schottky Barrier Diodes Zener Diodes Rectifiers Small Signal Transistors Medium Power Transistors Power Transistors	Original	PDF	C-120 OT-23 OT23-6L DO-213AB DO-214AC DO-214AA OT-223 O-252 DIAC DB2 BD469 C2N3904 pin configuration transistor BC547 smd packaging C2N5551 cbc337 D1 DB2 Diac SMD SOT23 transistor MARK Y2 A1941 1N4007 MINI MELF
pin configuration transistor BC547 smd packaging Abstract: BC547 smd packaging BD469 C2N3904 c5198 CMJE2955T transistor mcr100-8 BC337 TO-92 Generic DIAC DB2 BC337 hie hre hfe Text: Quick Reference Data Chip/Dice – Diffused Silicon Wafers Surface Mount Devices Leaded Semiconductor Devices Electronic Manufacturing Services Switching Diodes & Arrays Schottky Barrier Diodes Zener Diodes Rectifiers Small Signal Transistors Medium Power Transistors	Original	PDF	DO-35 DO-41 C-120 0406-3K pin configuration transistor BC547 smd packaging BC547 smd packaging BD469 C2N3904 c5198 CMJE2955T transistor mcr100-8 BC337 TO-92 Generic DIAC DB2 BC337 hie hre hfe
transistor 2N3906 smd 2A SOT23 Abstract: BC327-40 SMD pin configuration transistor BC547 smd packaging DIAC DB2 BC547 smd packaging bd469 W04M pin configuration A1941 C5198 application notes D1 DB2 Diac w33 SMD sot 23 Text: Contents Chips/Dice Package Outline Drawings Page # Axial Glass/Plastic Packages Package Outline Drawings Page # … Leaded Plastic Packages Chips/Dice for Diodes 2 DO-35 50 KBPC 60 Chips/Dice for Transistors 2 DO-41 50 KBPC-6 60 Products for CFL/TL Ballasts	Original	PDF	DO-35 DO-41 DO-15 DO-201AD DO-41P 200mW OD-80C LL-34 transistor 2N3906 smd 2A SOT23 BC327-40 SMD pin configuration transistor BC547 smd packaging DIAC DB2 BC547 smd packaging bd469 W04M pin configuration A1941 C5198 application notes D1 DB2 Diac w33 SMD sot 23