K4T51043QB-GCCC
Abstract: K4T51043QB-GCE6 K4T51043QB-GLE6
Text: Preliminary DDR2 SDRAM 512Mb B-die DDR2 SDRAM 512Mb B-die DDR2 SDRAM Specification Version 0.91 September 2003 Rev. 0.91 Sep. 2003 Page 1 of 38 Preliminary DDR2 SDRAM 512Mb B-die DDR2 SDRAM Contents 1. Key Feature 2. Package Pinout/Mechnical Dimension & Addressing
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512Mb
K4T51043QB-GCCC
K4T51043QB-GCE6
K4T51043QB-GLE6
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CS10
Abstract: PQFP44 PSD211R ZPSD211R ZPSD211RV psd3xx
Text: PSD211R ZPSD211R, ZPSD211RV Low Cost Field Programmable Microcontroller Peripherals FEATURES SUMMARY • Single Supply Voltage: Figure 1. Packages – 5 V±10% for PSD211R and ZPSD211R – 2.7 to 5.5 V for ZPSD211RV ■ Up to 256 Kbit of EPROM ■ Input Latches
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PSD211R
ZPSD211R,
ZPSD211RV
PSD211R
ZPSD211R
PLDCC44
CLDCC44
PQFP44
CS10
PQFP44
ZPSD211R
ZPSD211RV
psd3xx
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IS25C08
Abstract: IS25C16 X101 X110 IS25C08-2ZLI
Text: IS25C08 IS25C16 ISSI 8K-BIT/16K-BIT SPI SERIAL ELECTRICALLY ERASABLE PROM Preliminary Information APRIL 2006 FEATURES DESCRIPTION • Serial Peripheral Interface SPI Compatible — Supports SPI Modes 0 (0,0) and 3 (1,1) • Wide-voltage Operation — Vcc = 1.8V to 5.5V
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IS25C08
IS25C16
8K-BIT/16K-BIT
IS25C08-2CLI
IS25C08-2PLI
IS25C08-2GLI
IS25C08-2ZLI
300-mil
169-mil
IS25C16-2CLI
IS25C08
IS25C16
X101
X110
IS25C08-2ZLI
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Untitled
Abstract: No abstract text available
Text: IS25C08 IS25C16 ISSI 8,192/16,384-BIT SPI SERIAL ELECTRICALLY ERASABLE PROM Advanced Information November 2003 FEATURES DESCRIPTION • Serial Peripheral Interface SPI Compatible — Supports SPI Modes 0 (0,0) and 3 (1,1) • Low power CMOS — Active current less than 3.0 mA (2.5V)
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IS25C08
IS25C16
384-BIT
IS25C08-2PI
IS25C08-2GI
IS25C16-2PI
IS25C16-2GI
IS25C08-3PI
IS25C08-3GI
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Untitled
Abstract: No abstract text available
Text: HY5PS12421 L F HY5PS12821(L)F HY5PS121621(L)F 512Mb DDR2 SDRAM HY5PS12421(L)F HY5PS12821(L)F HY5PS121621(L)F This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY5PS12421
HY5PS12821
HY5PS121621
512Mb
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Untitled
Abstract: No abstract text available
Text: HY5PS1G431 L F HY5PS1G831(L)F 1Gb DDR2 SDRAM HY5PS1G431(L)F HY5PS1G831(L)F This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY5PS1G431
HY5PS1G831
HY5PS12421
HY5PS12821
HY5PS121621
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Untitled
Abstract: No abstract text available
Text: HY5PS12421 L F HY5PS12821(L)F HY5PS121621(L)F 512Mb DDR2 SDRAM HY5PS12421(L)F HY5PS12821(L)F HY5PS121621(L)F This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY5PS12421
HY5PS12821
HY5PS121621
512Mb
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HY5PS121621BFP
Abstract: HY5PS121621B HY5PS121621BFP-2
Text: HY5PS121621BFP 512Mb 32Mx16 gDDR2 SDRAM HY5PS121621BFP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY5PS121621BFP
512Mb
32Mx16)
1HY5PS121621BFP
300Mhz
400Mhz
500MHz
84Ball
HY5PS121621BFP
HY5PS121621B
HY5PS121621BFP-2
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Untitled
Abstract: No abstract text available
Text: HY5PS121621BFP 512Mb 32Mx16 DDR2 SDRAM HY5PS121621BFP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY5PS121621BFP
512Mb
32Mx16)
1HY5PS121621BFP
300Mhz
400Mhz
500MHz
450MHz/500MHz)
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Untitled
Abstract: No abstract text available
Text: HY5PS121621BFP 512Mb 32Mx16 gDDR2 SDRAM HY5PS121621BFP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY5PS121621BFP
512Mb
32Mx16)
1HY5PS121621BFP
300Mhz
400Mhz
500MHz
450MHz/500MHz)
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HY5PS561621AFP-33
Abstract: No abstract text available
Text: HY5PS561621AF P 256Mb(16Mx16) gDDR2 SDRAM HY5PS561621AF(P) This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY5PS561621AF
256Mb
16Mx16)
1HY5PS561621AF
300Mhz
84Ball
HY5PS561621AFP-33
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Untitled
Abstract: No abstract text available
Text: H5PS1G63EFR 1Gb 64Mx16 DDR2 SDRAM H5PS1G63EFR This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 1.1/ Oct. 2008
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H5PS1G63EFR
64Mx16)
500Mhz
84Ball
13MAX
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Untitled
Abstract: No abstract text available
Text: HY5PS561621AFP 256Mb 16Mx16 gDDR2 SDRAM HY5PS561621AFP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY5PS561621AFP
256Mb
16Mx16)
1HY5PS561621AFP
300Mhz
450MHz)
HY5PS56ance
84Ball
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IS25C08
Abstract: IS25C16 X101 X110
Text: IS25C08 IS25C16 ISSI 8,192/16,384-BIT SPI SERIAL ELECTRICALLY ERASABLE PROM Advanced Information February 2004 FEATURES DESCRIPTION • Serial Peripheral Interface SPI Compatible — Supports SPI Modes 0 (0,0) and 3 (1,1) • Low power CMOS — Active current less than 3.0 mA (2.5V)
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IS25C08
IS25C16
384-BIT
IS25C08-2PI
IS25C08-2GI
300-mil
IS25C16-2PI
IS25C16-2GI
IS25C08-3PI
IS25C08
IS25C16
X101
X110
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Untitled
Abstract: No abstract text available
Text: HY5PS56421 L F HY5PS56821(L)F HY5PS561621(L)F 256Mb DDR2 SDRAM HY5PS56421(L)F HY5PS56821(L)F HY5PS561621(L)F This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY5PS56421
HY5PS56821
HY5PS561621
256Mb
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IS25C08
Abstract: IS25C16 X101 X110 IS25C08-2GLI
Text: IS25C08 IS25C16 ISSI 8K-BIT/16K-BIT SPI SERIAL ELECTRICALLY ERASABLE PROM Advanced Information January 2005 FEATURES DESCRIPTION • Serial Peripheral Interface SPI Compatible — Supports SPI Modes 0 (0,0) and 3 (1,1) • Low power CMOS — Active current less than 3.0 mA (2.5V)
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IS25C08
IS25C16
8K-BIT/16K-BIT
16-2GLI
IS25C16-2ZLI
300-mil
169-mil
IS25C08-3PA3
IS25C08-3GA3
IS25C08-3ZA3
IS25C08
IS25C16
X101
X110
IS25C08-2GLI
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Untitled
Abstract: No abstract text available
Text: IS25C16 16K-BIT SPI SERIAL ELECTRICALLY ERASABLE PROM FEATURES • Serial Peripheral Interface SPI Compatible — Supports SPI Modes 0 (0,0) and 3 (1,1) • Wide-voltage Operation — Vcc = 1.8V to 5.5V • Low power CMOS — Operating current less than 1 mA (1.8V)
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IS25C16
16K-BIT
16-byte
IS25C16
16Kbit
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xx30
Abstract: SST39LF100 SST39VF100 VF100
Text: 1 Mbit 64K x16 Multi-Purpose Flash SST39LF100 / SST39VF100 Data Sheet SST39LF/VF1003.0 & 2.7V 1Mb (x16) MPF memories FEATURES: • Organized as 64K x16 • Single Voltage Read and Write Operations – 3.0-3.6V for SST39LF100 – 2.7-3.6V for SST39VF100 • Superior Reliability
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SST39LF100
SST39VF100
SST39LF/VF1003
SST39LF100
S71129-04-000
xx30
SST39VF100
VF100
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z84c50
Abstract: No abstract text available
Text: PRELIMINARY PRODUCT SPECIFICATION < £ S L O E Z84C50 J une 1989 Z80 RAM 80 Z80 CPU/2K SRAM FEATURES • Z80 CPU 2K Static RAM ■ Powerful set of 158 instructions ■ Wait State Generator for external memory ■ ■ Low power consumption TBD Typ (5V.10 MHz under RUN mode)
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Z84C50
z84c50
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Untitled
Abstract: No abstract text available
Text: • ^ 4 1 7 4 3 000b732 Oflb Advance Information X84F016/008 16K/8K MPS Serial Flash Micro Port Saver SerialFlash with Block Lock™ Protection FEATURES • Direct Interface to Micros — Eliminates I/O port requirements — No interface glue logic required
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000b732
X84F016/008
16K/8K
20-LEAD
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Untitled
Abstract: No abstract text available
Text: <£ZiIi3G Pr e l im in a r y p r o d u c t S p ec ific a tio n Z84C50 J une 1989 Z80 RAM 80 Z80 CPU/2K SRAM FEATURES • Z80 CPU 2K Static RAM ■ Powerful set of 158 instructions ■ Wait State Generator for external memory ■ Power Interrupt function _
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Z84C50
NonZ80
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psd211
Abstract: No abstract text available
Text: PSD211RFamily PSD211R ZPSD211R ZPSD211RV Low Còsi Microcontroller Peripherals February, 1999 47280 Kato Road, Fremont, California 94538 Tel: 510-656-5400 Fax: 510-657-8495 800-TEAM-WSI 800-832-6974 Web Site: waferscale.com E-mail: [email protected] Return to Main Menu
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PSD211RFamily
PSD211R
ZPSD211R
ZPSD211RV
800-TEAM-WSI
PSD211R
2PSD211R
psd211
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Untitled
Abstract: No abstract text available
Text: ZILOG INC LIE D TRfiMOMB DDEMfl'IS H E «ZIL PRELIMINARY PRODUCT SPECIFICATION < $ 3 1 1 3 5 Z84C50 June 1989 Z80 RAM 80 Z80 CPU/2K SRAM FEATURES • Z80 CPU 2K Static RAM ■ Powerful set of 158 instructions ■ Wait State Generator for external memory ■ Power Interrupt function
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Z84C50
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MC6829CL
Abstract: m6809
Text: M O TO R O LA Advance Information HMOS MEMORY MANAGEMENT UNIT HIGH DENSITY N-CHANNEL, SILICON-GATEI The principle function of the MC6829 Memory Management Unit (MMU is to expand the address space of the MC6809from 64K bytes to a maximum of 2 Megabytes. Each MMU is capable o f handling four d if
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MC6829
MC6809from
A11-A15)
PA11-PA20)
MC6829L
MC6829CL
MC68A29L
MC68A29CL
MC68B29L
MC6829S
MC6829CL
m6809
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