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    A10A11 Price and Stock

    Vishay Intertechnologies FA10A110R0JE29

    FA10A 110 5% E29 e3 - Custom Tape W/Leader (Alt: FA10A110R0JE29)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas FA10A110R0JE29 Tape w/Leader 7 Weeks 100
    • 1 -
    • 10 -
    • 100 $1.7955
    • 1000 $1.5367
    • 10000 $1.5367
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    Mouser Electronics FA10A110R0JE29
    • 1 $2.97
    • 10 $2.66
    • 100 $1.94
    • 1000 $1.35
    • 10000 $1.32
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    Vishay Intertechnologies FA10A110R0JE12

    FA10A 110 5% E12 e3 - Bulk (Alt: FA10A110R0JE12)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas FA10A110R0JE12 Bulk 7 Weeks 1
    • 1 $67.5
    • 10 $8.38725
    • 100 $1.6891
    • 1000 $1.6891
    • 10000 $1.6891
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    Glenair Inc 890-002-9SA1-0A1-12J

    Rectangular MIL Spec Connectors NANO WIRE LEADS - NANO CONNECTORS
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    Mouser Electronics 890-002-9SA1-0A1-12J
    • 1 -
    • 10 $368.24
    • 100 $252.96
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    Newark 890-002-9SA1-0A1-12J Bulk 1 1
    • 1 $544.11
    • 10 $335.51
    • 100 $145.88
    • 1000 $145.88
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    Glenair Inc 891-001-9PA1-0A1-12J

    Rectangular MIL Spec Connectors NANO WIRE LEADS - NANO CONNECTORS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 891-001-9PA1-0A1-12J
    • 1 -
    • 10 $381
    • 100 $261.73
    • 1000 $261.73
    • 10000 $261.73
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    Newark 891-001-9PA1-0A1-12J Bulk 1 1
    • 1 $562.96
    • 10 $347.14
    • 100 $150.93
    • 1000 $150.93
    • 10000 $150.93
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    Glenair Inc 890-001-21PA1-0A1-12J

    Rectangular MIL Spec Connectors NANO WIRE LEADS - NANO CONNECTORS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 890-001-21PA1-0A1-12J
    • 1 -
    • 10 $650.2
    • 100 $650.2
    • 1000 $650.2
    • 10000 $650.2
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    Newark 890-001-21PA1-0A1-12J Bulk 1 1
    • 1 $960.73
    • 10 $592.41
    • 100 $257.57
    • 1000 $257.57
    • 10000 $257.57
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    Find more A10A11 price and stock on Findchips.com

    A10A11 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Sony IMX 183

    Abstract: Sony sony cmos sensor imx 178 Sony imx 214 Sony ImX 252 sony cmos sensor imx 226 Sony IMX 219 CMOS Sony "IMX 219" CMOS sony IMX 322 cmos sony cmos sensor imx 185
    Text: i.MX 6Solo/6DualLite Applications Processor Reference Manual Document Number: IMX6SDLRM Rev. 1, 04/2013 i.MX 6Solo/6DualLite Applications Processor Reference Manual, Rev. 1, 04/2013 2 Freescale Semiconductor, Inc. Contents Section number Title Page Chapter 1


    Original     		PDF

    2MX16X4

    Abstract: IS42S32400AL
    Text: IS42S81600AL, IS42LS81600AL IS42S16800AL, IS42LS16800AL IS42S32400AL, IS42LS32400AL 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT LOW-POWER SYNCHRONOUS DRAM ISSI PRELIMINARY INFORMATION SEPTEMBER 2003 • Clock frequency: 133, 100, MHz OVERVIEW ISSI's 128Mb Low - Power Synchronous DRAM achieves


    Original     		IS42S81600AL, IS42LS81600AL IS42S16800AL, IS42LS16800AL IS42S32400AL, IS42LS32400AL 16Meg 128-MBIT 128Mb 2MX16X4 IS42S32400AL PDF

    W641GG2KB

    Abstract: gddr3 schematic WBGA-136 W641GG2
    Text: W641GG2KB 1-Gbit GDDR3 Graphics SDRAM Table of Contents 1. GENERAL DESCRIPTION . 6 2. FEATURES . 7


    Original     		W641GG2KB A01-001 W641GG2KB gddr3 schematic WBGA-136 W641GG2 PDF

    POWER COMMAND HM 1211

    Abstract: power generation POWER COMMAND HM 1211 6331-1 gddr3 schematic HYB18T256324F-20 infineon sgram
    Text: Data Sheet, Rev. 1.11, April 2005 HYB18T256324F–16 HYB18T256324F–20 HYB18T256324F–22 256-Mbit GDDR3 DRAM [600MHz] RoHS compliant Memory Products N e v e r s t o p t h i n k i n g . Edition 04-2005 Published by Infineon Technologies AG, St.-Martin-Strasse 53,


    Original     		HYB18T256324F 256-Mbit 600MHz] JESD-51 10292004-DOXT-FS0U POWER COMMAND HM 1211 power generation POWER COMMAND HM 1211 6331-1 gddr3 schematic HYB18T256324F-20 infineon sgram PDF

    25x10

    Abstract: CI 576
    Text: MITSUBISHI LSIs SDRAM Rev.3.1 Nov.'01 M2L64S40DWG -6, -6L,-7,-7L (4-BANK x 1,048,576-WORD x 16-BIT) 64M Low Power Synchronous DRAM Some of contents are described for general products and are subject to change without notice. DESCRIPTION M2L64S40DWG is a 4-bank x 1,048,576-word x 16-bit, low power synchronous DRAM, with1.8V


    Original     		M2L64S40DWG 576-WORD 16-BIT) 16-bit, M2L64S40ea 25x10 CI 576 PDF

    Untitled

    Abstract: No abstract text available
    Text: 27C256T 256K 32K x 8-Bit OTP EPROM A5-A9 1024 x 1022 Memory Matrix x-Decoder NC A12-A14 A12-A16 I/O0 Y- Gating Input Data Control I/O 7 I/O15 Y - Decoder 27C256T CE OE A0-A4 A10-A11 PGM VCC VPP VSS H H : High Threshhold Inverter FEATURES: DESCRIPTION: • 32K x 8-bit OTP EPROM organization


    Original     		27C256T A12-A14 A12-A16 I/O15 A10-A11 27C256T PDF

    Untitled

    Abstract: No abstract text available
    Text: CHB/CHC Series How to order CH Ref. order * * * * * * * * * * * * CONNECTOR FAMILY Contact arrangement Two rows Three rows B C Connector size Two rows: 017-029-033-041-053-065-072-084-096-120 Three rows: 026-044-062-080-098-108-126-144 Without contact: 000


    Original     		Y1-V23 MIL-DTL-55302 B-488 N-290 PDF

    hypertac connector insertion tools

    Abstract: HYPERTAC CONTACT PIN a17 JN1123 HYPERTAC PIN CHC144 Hypertac connector
    Text: CHB CHC PCB Connectors January 2005 ISSUE 1.0 • ENGLISH This datasheet has been downloaded from http://www.digchip.com at this page HYPERTAC CONTACT wire sleeve before insertion of pin pin partially inserted into sleeve pin completely inserted into sleeve


    Original     		providing54 hypertac connector insertion tools HYPERTAC CONTACT PIN a17 JN1123 HYPERTAC PIN CHC144 Hypertac connector PDF

    HYB18T256324

    Abstract: No abstract text available
    Text: Data Sheet, Rev. 1.11, April 2005 HYB18T256324FL22 HYB18T256324FL25 256-Mbit GDDR3 DRAM RoHS compliant Memory Products N e v e r s t o p t h i n k i n g . Edition 04-2005 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 München, Germany


    Original     		HYB18T256324FL22 HYB18T256324FL25 256-Mbit technologyT256324FL JESD-51 07162004-7DXX-SZMF HYB18T256324 PDF

    HYB18H512321AF-14

    Abstract: No abstract text available
    Text: Data Sheet, Rev. 1.30, Feb. 2005 HYB18H512321AF–14 HYB18H512321AF–16 HYB18H512321AF–20 512-Mbit GDDR3 Graphics RAM [700 MHz] Green Product Memory Products N e v e r s t o p t h i n k i n g . Edition 2005-02 Published by Infineon Technologies AG, St.-Martin-Strasse 53,


    Original     		HYB18H512321AF 512-Mbit HYB18H512321AF­ JESD-51 05122004-B1L1-JEN8 HYB18H512321AF-14 PDF

    MICRON gddr3

    Abstract: GDDR3 SDRAM 256Mb gddr3 FBGA DDR3 x32 35w4 MT44H8M32F2FW-16 32x4 BA1T10 marking R810
    Text: ADVANCE‡ 256Mb: x32 GDDR3 SDRAM GRAPHICS DDR3 SDRAM MT44H8M32 – 2 MEG x 32 x 4 BANKS For the latest data sheet, please refer to the Micron Web site: www.micron.com/datasheets Features • • • • • • • • • • • • • • • • •


    Original     		256Mb: MT44H8M32 09005aef808f8a4f MICRON gddr3 GDDR3 SDRAM 256Mb gddr3 FBGA DDR3 x32 35w4 MT44H8M32F2FW-16 32x4 BA1T10 marking R810 PDF

    D4001

    Abstract: No abstract text available
    Text: 27C1512T 512Kb 32K x 16-bit OTP EPROM MCM A5 A9 X-Decoder 1024 x 512 Memory Matrix A12 A16 I/O0 Input Data Control I/O7 Y-Gating Y-Decoder CE OE A0-A4 A10-A11 PGM Memory VCC VPP H : High Threshold Inverter H VSS Logic Diagram FEATURES: DESCRIPTION: • 32K x 16 Bit OTP EPROM organization


    Original     		27C1512T 512Kb 16-bit) A10-A11 27C1512T D4001 PDF

    HYB18H512321AF-12

    Abstract: gddr3 schematic BCX10
    Text: Data Sheet, Rev. 1.73, Aug. 2005 HYB18H512321AF–12/14/16/20 HYB18H512321AFL14/16/20 512-Mbit GDDR3 Graphics RAM RoHS compliant Memory Products N e v e r s t o p t h i n k i n g . Edition 2005-08 Published by Infineon Technologies AG, St.-Martin-Strasse 53,


    Original     		HYB18H512321AF HYB18H512321AFL14/16/20 512-Mbit JESD-51 05122004-B1L1-JEN8 HYB18H512321AF-12 gddr3 schematic BCX10 PDF

    Untitled

    Abstract: No abstract text available
    Text: TYPES SN54ALS677, SN54ALS678. SN74ALS677, SN74ALS678 ADDRESS COMPARATORS D 2 6 6 1 , J U N E 1 9 8 2 — R E V IS E D D E C E M B E R 1 9 8 3 S N 54A LS 677 . . . JT PACKAGE SN 74A LS 677 . . . .NT PACKAGE TOP VIEW • A L S 6 7 7 is a 16 -b it to 4-B it Comparator w ith Enable


    OCR Scan     		SN54ALS677, SN54ALS678. SN74ALS677, SN74ALS678 FEFF16 PDF

    HM628512

    Abstract: No abstract text available
    Text: HM628512 Series 524288-word x 8-bit High Speed CMOS Static RAM HITACHI ADE-203-236F Z Rev. 6.0 Jun. 9, 1995 Description The Hitachi HM628512 is a 4-Mbit static RAM organized 5 12-kword x 8-bit. It realizes igher density, higher performance and low power consumption by employing 0.5 |J.m Hi-CMOS process technology. The device,


    OCR Scan     		HM628512 524288-word ADE-203-236F 12-kword 525-mil 400-mil 600-mil HM62851P/LP PDF

    Untitled

    Abstract: No abstract text available
    Text: 13E D I TSOSBID □0G04t.l VITELIC CORP V s\ - Z 3 'O VITELIC ^ V61C67 FAMILY HIGH PERFORMANCE LOW POWER 16K x 1 BIT CMOS STATIC RAM Features Description • High Speed • Maximum access time of 2 5 /3 5 /4 5 /5 5 /7 0 ns The V61C67 is a high speed, low power, 16,384word by 1-bit CMOS static RAM fabricated using


    OCR Scan     		0G04t V61C67 384word V61C67 PDF

    Untitled

    Abstract: No abstract text available
    Text: HN62444 Serios — P relim in ary 262,144 x 16-Bit/524,288 x 8-Bit CMOS MASK Programmable Read Only Memory • DESCRIPTION The HN62444 is a 4-Mbit CM O S mask-programmable ROM orga­ nized either as 262,144 words by 16 bits or as 524,288 words by 8 bits. Realizing low power consumption, this memory is allowed for


    OCR Scan     		HN62444 16-Bit/524 HN62444, 100ns 150mW D15-D8 PDF

    Untitled

    Abstract: No abstract text available
    Text: QS316245 PRELIMINARY Q High-Speed CMOS QuickSwitch 16-Bit Widebus Compatible Bus Switches FEATURES/BENEFITS QS316245 DESCRIPTION 5 switches connect inputs to outputs Direct bus connect Pin compatible with FCT16245 Flowthrough pinout for easy layout Zero propagation delay


    OCR Scan     		QS316245 16-Bit QS316245 FCT16245 48-pin 74bb603 MDSL-00129-01 PDF

    PD7507C

    Abstract: PD7507 MPD7507 PD7508 P7q-P73 nec 7508 eprom 2716 UPD7227 D75CG08 75CG08E
    Text: %Tt7{2 //P D 7 5 0 7 /0 8 4 -B it, Single-C hip CMOS M icrocom puters NEC Electronics Inc. D e scrip tio n F e a tu re s The /^PD7507 and //PD7508 4-bit, single-chip CM OS microcomputers have the//PD7500 series architecture. The subroutine stack is implemented in RAM for


    OCR Scan     		uPD7507 uPD7508 uPD7500 The/iPD7507 and//PD7508 PD7500 PD75CG08E 80/Z0S 3-003145A PD7507C PD7507 MPD7507 PD7508 P7q-P73 nec 7508 eprom 2716 UPD7227 D75CG08 75CG08E PDF

    ic programmer

    Abstract: No abstract text available
    Text: s ie b S D llS b NATL S E MI CO ND 00b52fc.l 33T «NSC3 MEMORY gH National SLA Semiconductor ~ r- NMC27C32B 32,768-Bit (4096 x 8) CMOS EPROM General Description Features The NMC27C32B is a 32k UV erasable and electrically re­ programmable CMOS EPROM, ideally suited for applica­


    OCR Scan     		00b52fc NMC27C32B NMC27C32B 768-Bit 24-pin ic programmer PDF

    EPR48

    Abstract: LCD 2 x 16 ia87
    Text: r = 7 Ä T # S G S - T H O M S O N R Æ Œ (ô m i(O T (ô K S S T 1 8 9 3 0 /3 1 DIGITAL SIGNAL PR O C ESSO R • 80 ns INSTRUCTION CYCLE TIME ‘ (1.2 (i CMOS technology) ■ PARALLEL HARVARD ARCHITECTURE ■ SEPARATED PROGRAM AND DATA BUSES ■ THREE DATA BUSES STRUCTURE


    OCR Scan     		16-BIT 32-BIT ST18930 ST18931 64Kx32-bit EPR48 LCD 2 x 16 ia87 PDF

    st z 426

    Abstract: No abstract text available
    Text: electronic June 1992 HM 65787 HI-REL DATA SHEET_ 64 k x 1 HIGH SPEED CMOS SRAM FE A T U R ES . FAST ACCESS TIME : 25/35 Z45/55 ns . LOW POWER CONSUMPTION ACTIVE : 320 mW typ STANDBY : 75 mW (typ) DATA RETENTION : 0.8 nW (typ) . TTL COMPATIBLE INPUTS AND OUTPUTS


    OCR Scan     		Z45/55 GQG4221 st z 426 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary HM62D932 Series 32,768-Word x 9-Bit High Speed CMOS Static Ram with Address Latch • FEATURES • High speed: fast access time 15/20 ns max. • Low Power Standby: 15nW (typ.) (L-version) Operation: 350mW (typ.) • Single 5V supply • Address Latch


    OCR Scan     		HM62D932 768-Word 350mW PDF

    FLASH MEMORY 29F

    Abstract: IC 7107 Pin diagram 29f flash 29F 128 16 S29F010 TMS29F010JL4
    Text: TMS29F010 1 048 576-BIT FLASH/BLOCK ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY SMJS01OA • Organization 128K x 8 or 4 Blocks of AUGUST 1990 — REVISED DECEMBER 1990 N and J P ackages Top View • HVCMOS Technology NC [ , A16f 2 A15[ 3 • All Inputs/Outputs TTL Compatible


    OCR Scan     		TMS29F010 576-BIT SMJS01OA 29F010-100 29F010-120 29F010-150 29F010-200 29F010-12 29F010-15 29F010-20 FLASH MEMORY 29F IC 7107 Pin diagram 29f flash 29F 128 16 S29F010 TMS29F010JL4 PDF