DSC8505
Abstract: No abstract text available
Text: DSC8505 Tentative Total pages page DSC8505 Silicon NPN epitaxial planar type For Low-frequency amplifier Marking Symbol : 5G Package Code : MT-2-A1-B Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)
|
Original
|
PDF
|
DSC8505
DSC8505
|
DSA4001
Abstract: a1r marking Marking a1s
Text: Tentative DSA4001 Total pages page DSA4001 Silicon PNP epitaxial planar type For general amplifier Marking Symbol : A1 Package Code : NS-B1-B-B Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)
|
Original
|
PDF
|
DSA4001
DSA4001
a1r marking
Marking a1s
|
DSC8Q01
Abstract: No abstract text available
Text: DSC8Q01 Tentative Total pages page DSC8Q01 Silicon NPN epitaxial planar dalington type For Low-frequency amplifier Marking Symbol : 5K Package Code : MT-2-A1-B Internal Connection C Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open
|
Original
|
PDF
|
DSC8Q01
DSC8Q01
|
DSC8102
Abstract: No abstract text available
Text: DSC8102 Tentative Total pages page DSC8102 Silicon NPN epitaxial planar type For Low-frequency amplifier Marking Symbol : 5D Package Code : MT-2-A1-B Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)
|
Original
|
PDF
|
DSC8102
DSC8102
|
A1 marking code amplifier
Abstract: marking A1 TRANSISTOR HJ669A Y2MARKING
Text: HI-SINCERITY Spec. No. : HE6830 Issued Date : 1994.01.25 Revised Date : 2004.09.23 Page No. : 1/3 MICROELECTRONICS CORP. HJ669A NPN EPITAXIAL PLANAR TRANSISTOR Description The HJ669A is designed for low frequency power amplifier. TO-252 Absolute Maximum Ratings TA=25°C
|
Original
|
PDF
|
HE6830
HJ669A
HJ669A
O-252
183oC
217oC
260oC
A1 marking code amplifier
marking A1 TRANSISTOR
Y2MARKING
|
marking A1 TRANSISTOR
Abstract: HJ667A Y2 MARKING a5 marking
Text: HI-SINCERITY Spec. No. : HE6830 Issued Date : 1994.01.25 Revised Date : 2005.07.14 Page No. : 1/3 MICROELECTRONICS CORP. HJ667A PNP EPITAXIAL PLANAR TRANSISTOR Description The HJ667A is designed for low frequency power amplifier. TO-252 Absolute Maximum Ratings TA=25°C
|
Original
|
PDF
|
HE6830
HJ667A
HJ667A
O-252
183oC
217oC
260oC
marking A1 TRANSISTOR
Y2 MARKING
a5 marking
|
Untitled
Abstract: No abstract text available
Text: BC546…BC550A/B/C NPN Transistor TO-92 Small Signal Product Features ◇For switching and AF amplifier applications ◇These types are subdivided into three groups A, B and C according to their current gain ◇Moisture sensitivity level 1 ◇Driver transistor
|
Original
|
PDF
|
BC546â
BC550A/B/C
MIL-STD-202,
BC550/A/B/C
|
Untitled
Abstract: No abstract text available
Text: HI-SINCERITY Spec. No. : HE9012 Issued Date : 1996.04.12 Revised Date : 2005.07.13 Page No. : 1/4 MICROELECTRONICS CORP. HI340 NPN EPITAXIAL PLANAR TRANSISTOR Description The HI340 is designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications.
|
Original
|
PDF
|
HE9012
HI340
HI340
O-251
183oC
217oC
260oC
|
HSB857J
Abstract: a5 marking
Text: HI-SINCERITY Spec. No. : HJ200101 Issued Date : 2001.09.01 Revised Date : 2005.07.14 Page No. : 1/4 MICROELECTRONICS CORP. HSB857J PNP EPITAXIAL PLANAR TRANSISTOR Description Low frequency power amplifier. TO-252 Absolute Maximum Ratings TA=25°C • Maximum Temperatures
|
Original
|
PDF
|
HJ200101
HSB857J
O-252
183oC
217oC
260oC
HSB857J
a5 marking
|
marking code k1
Abstract: A1 marking code amplifier marking A1 TRANSISTOR HI350 transistor mark code H1
Text: HI-SINCERITY Spec. No. : HE9008 Issued Date : 1996.04.12 Revised Date : 2005.07.13 Page No. : 1/4 MICROELECTRONICS CORP. HI350 PNP EPITAXIAL PLANAR TRANSISTOR Description The HI350 is designed for line operated audio output amplifier, switch mode power supply drivers and other switching applications.
|
Original
|
PDF
|
HE9008
HI350
HI350
O-251
183oC
217oC
260oC
marking code k1
A1 marking code amplifier
marking A1 TRANSISTOR
transistor mark code H1
|
transistor mark code H1
Abstract: A1 marking code amplifier HI649A y2 marking marking Y1 transistor
Text: HI-SINCERITY Spec. No. : HE9003 Issued Date : 1998.01.25 Revised Date : 2005.07.13 Page No. : 1/4 MICROELECTRONICS CORP. HI649A PNP EPITAXIAL PLANAR TRANSISTOR Description The HI649A is designed for low frequency power amplifier. TO-251 Absolute Maximum Ratings TA=25°C
|
Original
|
PDF
|
HE9003
HI649A
HI649A
O-251
183oC
217oC
260oC
transistor mark code H1
A1 marking code amplifier
y2 marking
marking Y1 transistor
|
A1 marking code amplifier
Abstract: HJ117
Text: HI-SINCERITY Spec. No. : HE6031 Issued Date : 1998.02.01 Revised Date : 2005.07.14 Page No. : 1/4 MICROELECTRONICS CORP. HJ117 PNP EPITAXIAL PLANAR TRANSISTOR Description TO-252 The HJ117 is designed for use in general purpose amplifier and low-speed switching applications.
|
Original
|
PDF
|
HE6031
HJ117
O-252
HJ117
183oC
217oC
260oC
A1 marking code amplifier
|
Untitled
Abstract: No abstract text available
Text: HI-SINCERITY Spec. No. : HE6001 Issued Date : 1996.02.26 Revised Date : 2005.07.14 Page No. : 1/4 MICROELECTRONICS CORP. HJ31C NPN EPITAXIAL PLANAR TRANSISTOR Description The HJ31C is designed for use in general purpose amplifier and switching applications.
|
Original
|
PDF
|
HE6001
HJ31C
HJ31C
O-252
183oC
217oC
260oC
|
HE9013
Abstract: HI42C MARK Y1 Transistor
Text: HI-SINCERITY Spec. No. : HE9013 Issued Date : 1996.04.12 Revised Date : 2005.07.13 Page No. : 1/4 MICROELECTRONICS CORP. HI42C PNP EPITAXIAL PLANAR TRANSISTOR Description The HI42C is designed for use in general purpose amplifier, low speed switching applications.
|
Original
|
PDF
|
HE9013
HI42C
HI42C
O-251
183oC
217oC
260oC
HE9013
MARK Y1 Transistor
|
|
|
Untitled
Abstract: No abstract text available
Text: HI-SINCERITY Spec. No. : HE6002 Issued Date : 1994.03.02 Revised Date : 2005.07.14 Page No. : 1/4 MICROELECTRONICS CORP. HJ32C PNP EPITAXIAL PLANAR TRANSISTOR Description The HJ32C is designed for use in general purpose amplifier and low speed switching applications.
|
Original
|
PDF
|
HE6002
HJ32C
HJ32C
O-252
183oC
217oC
260oC
|
HJ41C
Abstract: Y2 MARKING marking Y1 transistor
Text: HI-SINCERITY Spec. No. : HE6010 Issued Date : 1996.02.14 Revised Date : 2005.07.14 Page No. : 1/4 MICROELECTRONICS CORP. HJ41C NPN EPITAXIAL PLANAR TRANSISTOR Description The HJ41C is designed for use in general purpose amplifier and switching applications.
|
Original
|
PDF
|
HE6010
HJ41C
HJ41C
O-252
183oC
217oC
260oC
Y2 MARKING
marking Y1 transistor
|
HI3669
Abstract: ic k1
Text: HI-SINCERITY Spec. No. : HE9029 Issued Date : 1997.11.14 Revised Date : 2005.07.13 Page No. : 1/4 MICROELECTRONICS CORP. HI3669 NPN EPITAXIAL PLANAR TRANSISTOR Description The HI3669 is designed for using in power amplifier applications, power switching application.
|
Original
|
PDF
|
HE9029
HI3669
HI3669
O-251
183oC
217oC
260oC
ic k1
|
y2 marking
Abstract: A1 marking code amplifier HJ3669 a5 marking
Text: HI-SINCERITY Spec. No. : HE6029 Issued Date : 1997.10.24 Revised Date : 2005.07.14 Page No. : 1/4 MICROELECTRONICS CORP. HJ3669 NPN EPITAXIAL PLANAR TRANSISTOR Description The HJ3669 is designed for using in power amplifier applications, power switching application.
|
Original
|
PDF
|
HE6029
HJ3669
HJ3669
O-252
183oC
217oC
260oC
y2 marking
A1 marking code amplifier
a5 marking
|
Untitled
Abstract: No abstract text available
Text: HI-SINCERITY Spec. No. : HE9004 Issued Date : 1998.01.25 Revised Date : 2005.07.13 Page No. : 1/4 MICROELECTRONICS CORP. HI669A NPN EPITAXIAL PLANAR TRANSISTOR Description The HI669A is designed for low frequency power amplifier. TO-251 Absolute Maximum Ratings TA=25°C
|
Original
|
PDF
|
HE9004
HI669A
HI669A
O-251
183oC
217oC
260oC
|
Untitled
Abstract: No abstract text available
Text: HI-SINCERITY Spec. No. : HE9001 Issued Date : 1996.02.28 Revised Date : 2005.07.13 Page No. : 1/4 MICROELECTRONICS CORP. HI31C NPN EPITAXIAL PLANAR TRANSISTOR Description The HI31C is designed for use in general purpose amplifier and switching applications.
|
Original
|
PDF
|
HE9001
HI31C
HI31C
O-251
183oC
217oC
260oC
|
Untitled
Abstract: No abstract text available
Text: HI-SINCERITY Spec. No. : HE9002 Issued Date : 1994.03.02 Revised Date : 2005.07.13 Page No. : 1/4 MICROELECTRONICS CORP. HI32C PNP EPITAXIAL PLANAR TRANSISTOR Description The HI32C is designed for use in general purpose amplifier and low speed switching applications.
|
Original
|
PDF
|
HE9002
HI32C
HI32C
O-251
183oC
217oC
260oC
|
A1 marking code amplifier
Abstract: HJ42C
Text: HI-SINCERITY Spec. No. : HE6013 Issued Date : 1996.04.12 Revised Date : 2005.07.14 Page No. : 1/4 MICROELECTRONICS CORP. HJ42C PNP EPITAXIAL PLANAR TRANSISTOR Description The HJ42C is designed for use in general purpose amplifier, low speed switching applications.
|
Original
|
PDF
|
HE6013
HJ42C
HJ42C
O-252
183oC
217oC
260oC
A1 marking code amplifier
|
transistor mark code H1
Abstract: HI10387 A1 marking code amplifier
Text: HI-SINCERITY Spec. No. : HE9028 Issued Date : 1994.01.25 Revised Date : 2004.07.13 Page No. : 1/4 MICROELECTRONICS CORP. HI10387 NPN EPITAXIAL PLANAR TRANSISTOR Description The HI10387 is designed for general-purpose amplifier and low-speed switching applications.
|
Original
|
PDF
|
HE9028
HI10387
HI10387
O-251
183oC
217oC
260oC
transistor mark code H1
A1 marking code amplifier
|
transistor mark code H1
Abstract: HI669A
Text: HI-SINCERITY Spec. No. : HE9004 Issued Date : 1998.01.25 Revised Date : 2006.12.06 Page No. : 1/4 MICROELECTRONICS CORP. HI669A NPN EPITAXIAL PLANAR TRANSISTOR Description The HI669A is designed for low frequency power amplifier. TO-251 Absolute Maximum Ratings TA=25°C
|
Original
|
PDF
|
HE9004
HI669A
HI669A
O-251
10sec
transistor mark code H1
|
