Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. 20V N-Channel Enhancement-Mode MOSFET LN2302LT1G VDS= 20V RDS ON , [email protected], [email protected] = 60m Ω RDS(ON), [email protected], [email protected] = 115mΩ 3 1 2 Features SOT– 23 (TO–236AB) High Density Cell Design For Ultra Low On-Resistance Improved Shoot-Through FOM
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LN2302LT1G
236AB)
195mm
150mm
3000PCS/Reel
8000PCS/Reel
OT-723
OD-723)
10Reel/Inner
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sot-23 single diode mark PD
Abstract: LN2302LT1G SC-75 LN2302LT3G mark 642 sot 6 mark 642 sot 363 single diode sot-23 mark pd SOT23 MARKING N02 MARK LTRA SOT23
Text: LESHAN RADIO COMPANY, LTD. 20V N-Channel Enhancement-Mode MOSFET LN2302LT1G VDS= 20V RDS ON , [email protected], [email protected] = 60m Ω RDS(ON), [email protected], [email protected] = 115mΩ 3 1 2 Features SOT– 23 (TO–236AB) High Density Cell Design For Ultra Low On-Resistance Improved Shoot-Through FOM
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LN2302LT1G
236AB)
3000/Tape
LN2302LT3G
000/Tape
195mm
150mm
3000PCS/Reel
sot-23 single diode mark PD
LN2302LT1G
SC-75
LN2302LT3G
mark 642 sot 6
mark 642 sot 363
single diode sot-23 mark pd
SOT23 MARKING N02
MARK LTRA SOT23
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LP4101LT1G
Abstract: P41 sot-23 mark 642 sot 363 MARKING d1 sot-723 SC-75 SOT-353 MARKING 8v sot-23 single diode mark PD
Text: LESHAN RADIO COMPANY, LTD. 20V P-Channel Enhancement-Mode MOSFET LP4101LT1G VDS= -20V RDS ON , [email protected], [email protected] = 100 mΩ RDS(ON), [email protected], [email protected] = 150 mΩ 3 Features Advanced trench process technology 1 High Density Cell Design For Ultra Low On-Resistance
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LP4101LT1G
236AB)
3000/Tape
LP4101LT3G
000/Tape
195mm
150mm
3000PCS/Reel
LP4101LT1G
P41 sot-23
mark 642 sot 363
MARKING d1 sot-723
SC-75
SOT-353 MARKING 8v
sot-23 single diode mark PD
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LP2301LT1G
Abstract: SC-75 SOT-353 MARKING 8v 619 SOT 23 sot-23 single diode mark PD
Text: LESHAN RADIO COMPANY, LTD. 20V P-Channel Enhancement-Mode MOSFET LP2301LT1G VDS= -20V RDS ON , [email protected], [email protected] = 100 mΩ RDS(ON), [email protected], [email protected] = 150 mΩ 3 Features Advanced trench process technology 1 High Density Cell Design For Ultra Low On-Resistance
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LP2301LT1G
236AB)
3000/Tape
LP2301LT3G
000/Tape
195mm
150mm
3000PCS/Reel
LP2301LT1G
SC-75
SOT-353 MARKING 8v
619 SOT 23
sot-23 single diode mark PD
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. LN2306LT1G ▼ Capable of 2.5V gate drive ▼ Lower on-resistance 3 ▼ Surface mount package ▼ Pb-Free package is available 1 2 SOT– 23 TO–236AB D G S Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage VGS
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LN2306LT1G
236AB)
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. LN2312LT1G ▼ Capable of 2.5V gate drive ▼ Lower on-resistance 3 ▼ Surface mount package ▼ Pb-Free package is available 1 2 SOT– 23 TO–236AB D G S Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage VGS
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LN2312LT1G
236AB)
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ln2312
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. 20V N-Channel Enhancement-Mode MOSFET VDS= 20V RDS ON , [email protected], [email protected] = 41mΩ RDS(ON), [email protected], [email protected] = 47mΩ Features LN2312LT1G 3 Advanced trench process technology 1 High Density Cell Design For Ultra Low On-Resistance
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PDF
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LN2312LT1G
236AB)
195mm
150mm
3000PCS/Reel
8000PCS/Reel
OT-723
OD-723)
10Reel/Inner
ln2312
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. LN2302LT1G ▼ Capable of 2.5V gate drive ▼ Small package outline 3 ▼ Surface mount package ▼ Pb-Free package is available 1 2 SOT– 23 TO–236AB D G S Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage
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LN2302LT1G
236AB)
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LN2312LT1G
Abstract: LN2312LT3G mark 642 sot 363 SC-75 SOT-353 MARKING 8v SOT-353 vg
Text: LESHAN RADIO COMPANY, LTD. 20V N-Channel Enhancement-Mode MOSFET VDS= 20V RDS ON , [email protected], [email protected] = 41mΩ RDS(ON), [email protected], [email protected] = 47mΩ Features LN2312LT1G 3 Advanced trench process technology 1 High Density Cell Design For Ultra Low On-Resistance
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LN2312LT1G
236AB)
3000/Tape
LN2312LT3G
10000/Tape
195mm
150mm
3000PCS/Reel
LN2312LT1G
LN2312LT3G
mark 642 sot 363
SC-75
SOT-353 MARKING 8v
SOT-353 vg
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marking H2A sot-23
Abstract: MPS3904RLRA EIA 481 SOT363 H2B sot23 transistor 228 T3
Text: DL126TRS/D Tape & Reel and Packaging Specifications for Small-Signal Transistors, FETs and Diodes http://onsemi.com Excerpted from the ON Semiconductor Small–Signal Transistors, FETs and Diodes Device Data Book, DL126/D. Embossed Tape and Reel is used to facilitate automatic pick and place equipment feed requirements. The tape is used as the
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DL126TRS/D
DL126/D.
70/SOT
75/SOT
416/SC
88/SOT
marking H2A sot-23
MPS3904RLRA
EIA 481 SOT363
H2B sot23
transistor 228 T3
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free transistor equivalent book
Abstract: marking H2A sot-23 marking W2 sot363 H2B sot23 transistor number code book FREE
Text: DL126TRS/D Tape & Reel and Packaging Specifications for Small-Signal Transistors, FETs and Diodes http://onsemi.com Excerpted from the ON Semiconductor Small–Signal Transistors, FETs and Diodes Device Data Book, DL126/D. For the most current Tape & Reel information, please download BRD8011/D
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DL126TRS/D
DL126/D.
BRD8011/D
free transistor equivalent book
marking H2A sot-23
marking W2 sot363
H2B sot23
transistor number code book FREE
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SC-75
Abstract: sod-323 kn MARKING kn SOd323 SOD-323 marking KN sot-23 single diode mark PD L2SK3019LT1G code marking 2M sot-23 MOSFET l2sk3019
Text: LESHAN RADIO COMPANY, LTD. Silicon N-Channel MOSFET L2SK3019LT1G Applications 3 Interfacing,switching 30V,100mA 1 Features 2 Low on-resistance SOT– 23 Fast switching speed Low voltage drive(2.5V) makes this ideal for portable equipment Equivalent circuit
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L2SK3019LT1G
100mA)
3000/Tape
L2SK3019LT3G
000/Tape
195mm
150mm
3000PCS/Reel
SC-75
sod-323 kn
MARKING kn SOd323
SOD-323 marking KN
sot-23 single diode mark PD
L2SK3019LT1G
code marking 2M sot-23 MOSFET
l2sk3019
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EIA-468 label location
Abstract: W1 sot 363 MPS3904RLRA free transistor equivalent book MARKING W2 SOT23 sot353 transistor MARKING CODE LAYOUT G SOT89 marking W2 sot363
Text: DL126TRS/D Tape & Reel and Packaging Specifications for Small-Signal Transistors, FETs and Diodes http://onsemi.com Excerpted from the ON Semiconductor Small–Signal Transistors, FETs and Diodes Device Data Book, DL126/D. Embossed Tape and Reel is used to facilitate automatic pick and place equipment feed requirements. The tape is used as the
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DL126TRS/D
DL126/D.
70/SOT
75/SOT
416/SC
r14525
EIA-468 label location
W1 sot 363
MPS3904RLRA
free transistor equivalent book
MARKING W2 SOT23 sot353
transistor MARKING CODE LAYOUT G SOT89
marking W2 sot363
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MSD601
Abstract: Marking yr sot-23 Marking c0 SC-75 sot-23 Marking yr EIA-481 SOT363 SOT-353 b1
Text: MSD601 NPN General Purpose Transistors 3 P b Lead Pb -Free 1 2 SOT-23 MAXIMUM RATINGS(Ta=25°C) Symbol Value Unit Collector-Emitter Voltage VCEO 50 V Collector-Base Voltage VCBO 60 V Emitter-Base Voltage VEBO 7.0 V Collector Current - Continuous IC 100 mA
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MSD601
OT-23
18-Sep-06
MSD601
Marking yr
sot-23 Marking c0
SC-75
sot-23 Marking yr
EIA-481 SOT363
SOT-353 b1
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marking 13Q SOT-23
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L9013XLT1G FEATURE Pb-Free Package is available. 3 Ordering Information 1 Device Package Shipping L9013XLT1G SOT-23 3000/Tape&Reel L9013XLT3G SOT-23 10000/Tape&Reel 2 SOT-23 TO-236AB MAXIMUM RATINGS
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L9013XLT1G
OT-23
3000/Tape
L9013XLT3G
10000/Tape
O-236AB)
marking 13Q SOT-23
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Ultra High Speed Switching Application L1SS181LT1G z Low forward voltage : VF 3 = 0.92V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) 3 z Small total capacitance : CT = 2.2pF (typ.) z Pb-Free Package is Available. 1
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L1SS181LT1G
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f62 current transistor
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Digital transistors built-in resistors Pb-Free package is available FFeatures 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thinfilm resistors with complete isolation to allow positive biasing of the
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LDTD123YLT1G
f62 current transistor
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Dual Switching Diodes LBAW56WT1G z Pb-Free Package is Available. 3 DEVICE MARKING 1 LBAW56WT1G = A1 2 MAXIMUM RATINGS TA = 25°C CASE 419–04, STYLE 4 Rating Symbol Max Unit Reverse Voltag VR Forward Current Peak Forward Surge Current
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LBAW56WT1G
3000/Tape
LBAW56WT3G
10000/Tape
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mark 642 sot 363
Abstract: mark 642 sot 6 EN6100-4 SC-75 mark tw sot323 mark us sot-563
Text: ESDA6V1-5P6 5-Line TVS Array Power Dissipation 150m Watts Reverse Working Voltage 6.1 VOLTS P b Lead Pb -Free Features: * Monolithic Structure * Low Clamping Voltage * IEC Compatibility(EN6100-4) 61000-4-2(ESD): Air–15kV, Contact-8kV * MIL STD 883E-Method 3015-7: class 3
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EN6100-4)
883E-Method
OT-563
OT-563
02-Apr-09
150mm
200mm
200mm
mark 642 sot 363
mark 642 sot 6
EN6100-4
SC-75
mark tw sot323
mark us sot-563
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Digital transistors built-in resistors LDTA114EET1 zFeatures 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with
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LDTA114EET1
SC-89
LDTA114EET1
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Digital transistors built-in resistors LDTA144EET1 zFeatures 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with
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LDTA144EET1
SC-89
LDTA144EET1
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Digital transistors built-in resistors LDTC114EET1 zFeatures 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with
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LDTC114EET1
SC-89
LDTC114EET1
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diode Common Cathode LBAV70LT1G • Pb−Free Package is Available. 3 MAXIMUM RATINGS TA = 25°C 1 Rating Symbol Max Unit Reverse Voltage Forward Current Peak Forward Surge Current VR IF 70 200 500 Vdc
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LBAV70LT1G
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Switching Diode z Pb-Free Package is Available. LMBD6050LT1G Ordering Information Device Marking Shipping LMBD6050LT1G 5A 3000/Tape&Reel LMBD6050LT3G 5A 10000/Tape&Reel 3 1 2 MAXIMUM RATINGS Rating Reverse Voltage Forward Current
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LMBD6050LT1G
3000/Tape
LMBD6050LT3G
10000/Tape
236AB)
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