short circuit tracer
Abstract: MOS-Gated Transistors ESD Pushbutton data sheet Simple test MOSFET Procedures AN-964
Text: IR Application Note AN-986 TITLE: ESD Testing of MOS Gated Power Transistors Notices: HEXFET is the trademark for International Rectifier Power MOSFETs Summary: Topics Covered: I. Background II. A model for the ESD test circuit III. Experimental verification
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AN-986
short circuit tracer
MOS-Gated Transistors
ESD Pushbutton data sheet
Simple test MOSFET Procedures
AN-964
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Untitled
Abstract: No abstract text available
Text: KSD985/986 KSD985/986 Low Frequency Power Amplifier • Low Speed Switching Industrial Use TO-126 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter VCBO Collector-Base Voltage
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KSD985/986
O-126
KSD985
KSD986
PW300
Cycle10%
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KSD985
Abstract: KSD986
Text: KSD985/986 KSD985/986 Low Frequency Power Amplifier • Low Speed Switching Industrial Use TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage
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KSD985/986
O-126
KSD985
KSD986
KSD985
KSD986
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Untitled
Abstract: No abstract text available
Text: KSD985/986 KSD985/986 Low Frequency Power Amplifier • Low Speed Switching Industrial Use TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage
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KSD985/986
O-126
KSD985
KSD986
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D986-Y
Abstract: KSD986OS
Text: KSD985/986 KSD985/986 Low Frequency Power Amplifier • Low Speed Switching Industrial Use TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage
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KSD985/986
O-126
KSD985
KSD986
PW300
Cycle10%
O-126-3
KSD986OS
D986-Y
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Untitled
Abstract: No abstract text available
Text: KSD985/986 KSD985/986 Low Frequency Power Amplifier • Low Speed Switching Industrial Use TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage
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KSD985/986
O-126
KSD985
KSD986
PW300
Cycle10%
KSD986YS
O-126
O-126-3
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REJ10B0026
Abstract: kbcc 225 RBA14 rba9 Bt 2313 MRA250 mat735 8155 port Nippon capacitors H1520
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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H8S/2114R
REJ09B0098-0300
REJ10B0026
kbcc 225
RBA14
rba9
Bt 2313
MRA250
mat735
8155 port
Nippon capacitors
H1520
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KBU08
Abstract: ir receiver module sj 1838 rba9 h0075 8155 port ir receiver sj 1838 Nippon capacitors as11 ds hfe nv
Text: REJ09B0098-0300 The revision list can be viewed directly by clicking the title page. The revision list summarizes the locations of revisions and additions. Details should always be checked by referring to the relevant text. 16 H8S/2114RGroup Hardware Manual
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REJ09B0098-0300
H8S/2114RGroup
16-Bit
H8S/2100
H8S/2114R
R4F2114R
Unit2607
H8S/2114R
KBU08
ir receiver module sj 1838
rba9
h0075
8155 port
ir receiver sj 1838
Nippon capacitors
as11 ds hfe nv
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npn darlington 500v 2a
Abstract: "Darlington Transistor" darlington power transistor power darlington npn transistor high current darlington transistor npn transistor 3A darlington KSD5018 NPN transistor collector base and emitter Darlington transistor
Text: KSD5018 NPN SILICON DARLINGTON TRANSISTOR HIGH VOLTAGE POWER DARLINGTON TR BUILT-IN RESISTOR BETWEEN BASE AND EMITTER FOR MOTOR DRIVE TO-220 ABSOLUTE MAXIMUM RATINGS Rating Unit Collector Base Voltage Characteristic VCBO 600 V Collector Emitter Voltage VCEO
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KSD5018
O-220
KSD985/986
npn darlington 500v 2a
"Darlington Transistor"
darlington power transistor
power darlington npn transistor
high current darlington transistor
npn transistor 3A
darlington
KSD5018
NPN transistor collector base and emitter
Darlington transistor
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2sd1348
Abstract: 2sd134 2sb986
Text: Ordering number:ENN1245C PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SB986/2SD1348 50V/4A Switching Applications Applications Package Dimensions • Power supplies, relay drivers, lamp drivers, electrical equipment. unit:mm 2009B [2SB986/2SD1348]
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ENN1245C
2SB986/2SD1348
2009B
2SB986/2SD1348]
2SB986
2sd1348
2sd134
2sb986
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2SB986
Abstract: 2SD1348 ITR08810 2SB75 2SD175
Text: 2SB986 / 2SD1348 Ordering number : EN1245D SANYO Semiconductors DATA SHEET 2SB986 / 2SD1348 PNP / NPN Epitaxial Planar Silicon Darlington Transistors 50V / 4A Switching Applications Applications • Power supplies, relay drivers, lamp drivers, electrical equipment.
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2SB986
2SD1348
EN1245D
2SB986
2SD1348
ITR08810
2SB75
2SD175
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ARC-182
Abstract: transistor Common emitter configuration PHOI
Text: an AMP company CW Power Transistor, 30 - 400 MHz 85W PHOI 04-85 v2.00 Features NPN Silicon Power Transistor Common Emitter Configuration Class AB Broadband Operation 85 Watt PEP Output Diffused Emitter Ballasting Resistors Gold Metallization System Proven in Thousands of ARC-182 Airborne Radios
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ARC-182
transistor Common emitter configuration
PHOI
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d1609
Abstract: transistor d1609 d1609 c d1609 transistor 2SD1348 2SB986 2SB75
Text: 2SB986 / 2SD1348 Ordering number : EN1245E SANYO Semiconductors DATA SHEET 2SB986 / 2SD1348 PNP / NPN Epitaxial Planar Silicon Transistors 50V / 4A Switching Applications Applications • Power supplies, relay drivers, lamp drivers, electrical equipment. Features
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2SB986
2SD1348
EN1245E
2SB986
d1609
transistor d1609
d1609 c
d1609 transistor
2SD1348
2SB75
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2SA1986
Abstract: 2SC5358
Text: 2SA1986 TO SH IBA 2 S A 1 986 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm • Complementary to 2SC5358 • Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Tc = 25°C
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2SA1986
2SC5358
2SA1986
2SC5358
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2SC5358
Abstract: 2SA1986
Text: 2SA1986 TOSHIBA 2 S A 1 986 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm 1 5.9 MAX. '— • Complementary to 2SC5358 • Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage. % 2 ,0± 0.3 MAXIMUM RATINGS Ta = 25°C
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2SA1986
2SC5358
2SC5358
2SA1986
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irfc110
Abstract: IRFC9230 reco relay IRLC014
Text: AN-986 ESD Testing of MOS-Gated Power Transistors HEXFET is a tradem ark o f International Rectifier By Steve C lem en te Introduction A ll se m ic o n d u c to r c o m p o n e n ts have been proven to be static sensitive to v arying degrees. U s e r’s co n cern o n this
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AN-986
irfc110
IRFC9230
reco relay
IRLC014
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A 986 transistor
Abstract: SL 100 NPN Transistor
Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR KSD985/986 LOW FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING INDUSTRIAL USE ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage Collector-Emitter Voltage: KSD985 : KSD986 Emitter-Base Voltage
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KSD985/986
KSD985
KSD986
A 986 transistor
SL 100 NPN Transistor
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BC 251 transistor
Abstract: 50V 1A power transistor
Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR KSD985/986 LOW FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING INDUSTRIAL USE ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage VcEO 150 Collector-Emitter Voltage: KSD985 VcEO 60 V VcEO
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KSD985/986
KSD985
KSD986
Cycle10%
BC 251 transistor
50V 1A power transistor
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Untitled
Abstract: No abstract text available
Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR KSD985/986 LOW FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING INDUSTRIAL USE ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit C ollector-B ase Voltage V ceO 150 V C ollector-E m ltter Voltage : KSD985 V cE O
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KSD985/986
KSD985
KSD986
300ns
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ksd 150 full safe
Abstract: No abstract text available
Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR KSD985/986 LOW FREQUENCY POWER AMPLIFIER LOW SPEED SW ITCHING INDUSTRIAL USE T O -126 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit C ollector-Base Voltage VcEO 150 V C ollector-E m itter Voltage : KSD 985
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KSD985/986
KSD986
ksd 150 full safe
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2SD986
Abstract: 2SD985 2SB795 2SB794 Nec 2sd986
Text: NPN SILICON DARLINGTON POWER TRANSISTORS 2SD985.2SD986 DESCRIPTION The2SD985, 2SD986 are darlington transistors built-in dumper PACKAGE DIMENSIONS diodes at E-C. They are suitable fo r use to operate from 1C w ith o u t predriver, in millimeters inches 8.5 MAX.
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2SD985
2SD986
2SD985,
2SD986
2SB794,
2SB795
1000-lB
2SB794
Nec 2sd986
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5BE1
Abstract: bdt61 Darlington NPN Silicon Diode
Text: BDT61;61A BDT61B;61C PHILIPS INTERNATIONAL SbE ]> I 711002 3 0 0 4 3 5 5 0 Ö44 » P H I N SILICON DARLINGTON POWER TRANSISTORS N-P-N silicon power transistors in monolithic Darlington circuit for audio output stages and general purpose amplifier applications.
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BDT61
BDT61B
BDT60,
O-220.
7110fl2b
G04B527
B2097
5BE1
Darlington NPN Silicon Diode
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ARC-182
Abstract: No abstract text available
Text: m a n A M P com pany CW Power Transistor, 85W 30 - 400 MHz PH0104-85 Features • NPN Silicon Pow er T ran sisto r • • • • • • C o m m o n E m itter C o n fig u ratio n Class AB B ro a d b an d O p e ra tio n 85 W att PEP O u tp u t D iffused E m itter B allasting R esistors
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ARC-182
PH0104-85
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Untitled
Abstract: No abstract text available
Text: Dual Transistors TO-78 Case Continued TYPE NO. DESCRIPTION •c VCBO v CEO (mA) (V) (V) :E @ lc e v CE (mA) (V) MATCHING VCE(SAT) @ >C (mA) (V) (MHz) h FE Vb e MAX *TYP MIN *r MAX MIN MIN MIN MAX % (mV) MD982 PNP AMPL/SWITCH 600 60 50 35 . 10 10 0.5 150
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MD982
MD2219A
MD2369
MD2369A
MD2369B
MD8002
MD8003
D3250
MD3251
D7007
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