OMRON lzn2
Abstract: RELAY OMRON LZN2 RELAY OMRON LZN G5Y-154P lzn2 OMRON RELAY LZN omron type LZN eac reed relay omron relay lzn2 Omron LZN
Text: Omron A5 Catalogue 2007 1-282 11/9/06 10:16 am Page 10 Technical Information – Relays • Relay Classification Model G4W Discrete Enclosure Ratings Features Unsealed Designed for manual soldering G2R Flux protection Design inhibits flux intrusion into the casing fro
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2N4923
Abstract: No abstract text available
Text: 2N4923 NPN silicon epitaxial transistor 2.50 Transistors Transistors Bip. 1 of 1 Home Part Number: 2N4923 Online Store 2N4923 Diodes NPN s ilic o n epitax ial t rans is to r Transistors Enter code INTER3 at
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2N4923
com/2n4923
2N4923
O-126var
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106Q
Abstract: MOC8204 MOC8205 MOC8206
Text: HIGH VOLTAGE TRANSISTOR cmocoLmERs . . . consist of gallium-arsenide infrared emitting diodes optically coupled to high voltage, silicon, phototransistor detectors in a standard 6-pin DIP package. They are designed for applications requiring high voltage output and are particularly useful in copy
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E54915
106Q
MOC8204
MOC8205
MOC8206
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Untitled
Abstract: No abstract text available
Text: ON Semiconductort MPSA13 MPSA14 * Darlington Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCES 30 Vdc Collector −Base Voltage VCBO 30 Vdc Emitter −Base Voltage VEBO 10
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MPSA13
MPSA14
O-226AA)
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250v 60A mosfet
Abstract: 1E14 2E12 2N7296D 2N7296H 2N7296R
Text: S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRF254 D, R, H 2N7296D, 2N7296R 2N7296H Radiation Hardened N-Channel Power MOSFETs November 1994 Features Package • 17A, 250V, RDS(on) = 0.185Ω TO-254AA • Second Generation Rad Hard MOSFET Results From New Design Concepts
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FRF254
2N7296D,
2N7296R
2N7296H
O-254AA
100KRAD
300KRAD
1000KRAD
3000KRAD
250v 60A mosfet
1E14
2E12
2N7296D
2N7296H
2N7296R
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b982
Abstract: b1676 b896 SP 1191 B1328 B3045 FLASH TRANSLATION LAYER FTL 5498 transistor X28F008SA-120 b3305
Text: 28F008SA 8-MBIT 1-MBIT x 8 FLASH MEMORY SmartDie Product Specification Y Y Y Y High-Density Symmetrically Blocked Architecture Sixteen 64-Kbyte Blocks Extended Cycling Capability 100K Block Erase Cycles 1 6M Block Erase Cycles per Chip Automated Byte Write and Block Erase
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28F008SA
64-Kbyte
X28F008SA-120
AP-359
AP-360
25F008SA
AP-364
b982
b1676
b896
SP 1191
B1328
B3045
FLASH TRANSLATION LAYER FTL
5498 transistor
X28F008SA-120
b3305
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LM1262
Abstract: LM1205 LM1208 LM1282 LM1282N N28B national semiconductor 1976 WF VQC 10
Text: a t i o n a l S e m i c o n d u c t o r LM1282 110 MHz RGB Video Amplifier System with On Screen Display OSD General Description Features The LM 1282 is a full feature video a m plifier w ith OSD in puts, all w ithin a 28-pin package. This part is intended for
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LM1282
LM1282
28-pin
bSG1124
LM1262
LM1205
LM1208
LM1282N
N28B
national semiconductor 1976
WF VQC 10
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Untitled
Abstract: No abstract text available
Text: 2SB 1282 TP4J10 I PNPff—U > K > h 7 > P N P Darlington Transistor .4.; I.-.- \f>£ISI O utline Dimensions 4.6±o.2 Equ ivalent C ircu it 2.7 ± 0.2 0.7 to.2 Unit ! mm Case 1 ITO-220 A b so lu te M ax. R atin g s m ie b I ; J u n c tio n T e m p e ra tu re
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TP4J10)
ITO-220
2SB1282
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74LS324
Abstract: 7400 TTL 74LS327 7402, 7404, 7408, 7432, 7400 80C96 74251 multiplexer 74C923 equivalent Flip-Flop 7473 74LS324 equivalent 74C08 equivalent
Text: N T E ELECTRONICS INC 17E H ^3125=1 G0G513S Q B - o S V. ! - TRANSISTOR-TRANSISTOR LOGIC INCLUDES SERIES 74C CMOS NTE TYPE NO. •DESCRIPTION . 7214 7400 74C00 74H00 74LS00 74S00 3-State Sel/Mlpx Quad 2-Input Pos Quad 2-Input Pos Quad 2-Input Pos Quad 2-Input Pos
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G0G513S
74C00
74H00
74LS00
74S00
74H01
74LS01
74C02
74LS02
74S02
74LS324
7400 TTL
74LS327
7402, 7404, 7408, 7432, 7400
80C96
74251 multiplexer
74C923 equivalent
Flip-Flop 7473
74LS324 equivalent
74C08 equivalent
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BD203-BD204
Abstract: BD201 RCA-BD201 17521 rca BD202 BD203 BD204 0017525 BD203 npn
Text: ÏÏÏ 38750816 E SOLID STATE Pro Electron Power Transistors DE~J 3 Ô 7 S 0 Û 1 G D 1 7 S B 1 □ 01E 17521 D^ - BD201, BD202, BD203, BD204 File Num ber
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750fll
BD201,
BD202,
BD203,
BD204
O-220AB
RCA-BD201
BD203
BD202
BD203-BD204
BD201
17521 rca
0017525
BD203 npn
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2SC1271
Abstract: EP253 transistors 1UW
Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English
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Tc-25
re-25-C)
/-175MHz.
/-175MHz,
2SC1271
EP253
transistors 1UW
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MRF221
Abstract: wide band choke vk200 MRF216 2N6081 VK200 VK200 ferrite broad band operation
Text: M RF216 silicon Tine RF L ine 40 W — 175 MHz CONTROLLED O RF POWER TRANSISTOR NPN SILICON NPN SILICON RF POWER TRANSISTOR . . .designed for 12.5 V o lt V H F large-signal am plifier applications in industrial and commercial FM equipment operating to 175 MHz.
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MRF216
MRF221
2N6081
MRF221
wide band choke vk200
MRF216
VK200
VK200 ferrite
broad band operation
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6.5S5
Abstract: 5S51 ely transformers I282 A IRFM054 SS452 DD113
Text: Data Sheet No. PD-9.709A INTERNATIONAL RECTIFIER l O R j AVALANCHE ENERGY RATED AND dv/dt RATED HEXFET TRANSISTOR IRFMQ54 N-CHANNEL 60 Volt, 0.027 Ohm HEXFET Product Summary The HEXFET® technology is the key to International Rectifier’s advanced line of power M O SFE T transistors.
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IRFM054
IRFM054D
IRFM054U
O-254
MIL-S-19500
I-284
6.5S5
5S51
ely transformers
I282 A
IRFM054
SS452
DD113
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a06 transistor
Abstract: CHIP T503 S BFP450 siemens BFP450
Text: S IE M E N S SIEGET 25 BFP450 NPN Silicon RF Transistor • • • • • For Medium Power Amplifiers Compression Point P.1dB = +19 dBm at 1.8 GHz Maximum Available Gain G ma = 14 dB at 1.8 GHz Noise Figure F = 1.25 dB at 1.8 GHz Transition Frequency f j = 24 GHz
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25-Line
Transistor25
BFP450
Q62702-F1590
OT343
a06 transistor
CHIP T503 S
BFP450 siemens
BFP450
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order thle document by MHPM7B12A120A/D SEMICONDUCTOR TECHNICAL DATA MHPM7B12A120A Hybrid Power Module Motorola Pwfttrod Dovtco Integrated Power Stage for 2.0 hp Motor Drives This module Integrates a 3-phase Input rectifier bridge, 3-phase output Inverter and brake transistor/diode In a single convenient package. The output
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MHPM7B12A120A/D
MHPM7B12A120A
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Untitled
Abstract: No abstract text available
Text: Tfipl HEWLETT mL'KM PACKARD Avantek Products Thin-Film Cascadable Amplifier 10 to 2000 MHz Technical Data UTO/UTC 2021 Series Features • Frequency Bange: 10 to 2000 MHz • Noise Figure: 3.7 dB Typ • Low VSWR • Temperature Compensated Applications
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Untitled
Abstract: No abstract text available
Text: cnr S6E SEMTECH CORP D 5 m 613^13^ 0DG322M Tb? « S E T 30 AMP, 400 WATT POSITIVE HYBRID VOLTAGE REGULATORS ABSOLUTE MAXIMUM RATINGS PARAMETER In p u t Voltage In p u t-O u tp u t V oltage D iffe re ntia l P ow er D is s ip a tio n 1 SYM BOL MAXIMUM UNITS
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0DG322M
DD0322Ã
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Transistor MP 1715
Abstract: transistor EM 9163 D 1878 TRANSISTOR
Text: T h o t HEWLETT mL/ÜMP A C K A R D Avantek Products Thin-Film Cascadable Amplifier 10 to 2000 MHz Technical Data UTO/UTC 2021 Series Features Description Pin Configuration • Frequency Range: 10 to 2000 MHz The 2021 Series Is a wideband thin-film bipolar RF amplifier with
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PCF79735
Abstract: PCF7931 philips PCF7931XP PCF7930 PCF7930XP pcf7973 pcf79735s Philips Semiconductors Selection Guide pcf79*5 philips remote control ic 14 pin
Text: Philips Semiconductors Selection guide Functional index PAGE CONTROL DEVICES FOR AUTOMOTIVE Multiplexed Bus Products Application info KIE 07/91 ME - Bit timing parameters for CAN networks 54 Application info EMC - Using the CAN transceiver 82C250 with unshielded bus cables
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P8xC592
P8xCE598
P82C150
AN94088
82C200
PCA82C250
PCA82C251
PCA82C252
82C250
PCF79735
PCF7931
philips PCF7931XP
PCF7930
PCF7930XP
pcf7973
pcf79735s
Philips Semiconductors Selection Guide
pcf79*5
philips remote control ic 14 pin
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82S62
Abstract: "Parity Checker" N82S62A N82S62F S82S62 S82S62F S82S62X N82S62
Text: Am82S62 Nine-Input Parity Checker/Generator Distinctive Characteristics • • • O D D /EV EN parity outputs Inhibit input to disable both outputs High-speed expansion input — Pg • PNP inputs • Advanced Schottky technology • % reliability assurance testing in compliance wi
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Am82S62
82S62
AmS2S62
"Parity Checker"
N82S62A
N82S62F
S82S62
S82S62F
S82S62X
N82S62
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Untitled
Abstract: No abstract text available
Text: Z1 Am79M570/Am79M574 Advanced Micro Devices Metering Subscriber Line Interface Circuit DISTINCTIVE CHARACTERISTICS • Programmable constant resistance feed Supports 2.2-V RMS metering 12 and 16 kHz ■ On-chip switching regulator for low-power dissipation
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Am79M570/Am79M574
11701B-017
Am79M570
Am79M57X
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TEA5703
Abstract: mm1279
Text: Æ T SGS-THOMSON TEA5703 fôüD 5 [l[L[I©Tr^(Q)^D(gi ADVANCED 3-HEAD PLAY-BACK AND RECORD AMPLIFIER FOR VCR ADVANCE DATA PLAY-BACK MODE - LOW NOISE AND WIDE BAND AMPLIFIERS FOR 3 HEADS -AUTOMATIC OFFSET CANCELLATION BE TWEEN THE 3 SELECTED HEADS - ONE PLAY-BACK OUTPUT WITHOUT AGC
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TEA5703
TEA5703
mm1279
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SEN 1327
Abstract: CI06B pnp phototransistor H11A10 1307 TRANSISTOR D34C1 SCR ci06b "Photo Interrupter" dual transistor H11B1 4N38
Text: PROGRAMMABLE THRESHOLD COUPLER GE TYPE H11A10 PAGE NO. 1281 CURRENT ISOLATION VOLTAGE «VpK» TRANSFER RATIO MIN. MIN. 1500 1 10% ID nA MAX. BVceo (VOLTS) MIN. 50 30 TYPICAL OiSEC.) VCEISAT) MAX. Tr Tf 1 2 2 1 1 2 2 2 2 I 5 1I 55 5 5 5 5 5 5 4 .4 .4 .4 1.0
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H11A10
H11AA1
H11AA2
H11D1
H11D2
H11D3
H11D4
4N38A
H11B1
H11B2
SEN 1327
CI06B
pnp phototransistor
1307 TRANSISTOR
D34C1
SCR ci06b
"Photo Interrupter" dual transistor
4N38
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BT 1840 PA
Abstract: pms Bridge Rectifier THA 1200 S uaa 1300
Text: MOTOROLA Order this documant by MHPM7B18A120B/D SEMICONDUCTOR TECHNICAL DATA 7 16 120B MHPM B A Hybrid Power Module Motore « Profond Dovfoa Integrated Power Stage for 3.0 hp Motor Drives This module Integrates a 3-phase Input rectifier bridge, 3-phase output
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MHPM7B18A120B/D
MHPM7B16A120B
BT 1840 PA
pms Bridge Rectifier
THA 1200 S
uaa 1300
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