1N6515US
Abstract: 1N6513US 1N6517 JV6512 1N6517US 1N6519 z15u Z60UFG Z100UFG 1N6512
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 13 November 2009. MIL-PRF-19500/575D 13 August 2009 SUPERSEDING MIL-PRF-19500/575C 8 November 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, HIGH VOLTAGE POWER RECTIFIER,
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MIL-PRF-19500/575D
MIL-PRF-19500/575C
1N6512
1N6519,
1N6512US
1N6519US,
MIL-PRF-19500.
1N6515US
1N6513US
1N6517
JV6512
1N6517US
1N6519
z15u
Z60UFG
Z100UFG
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z50ufg
Abstract: No abstract text available
Text: Z30UFG Z40UFG Z50UFG HIGH VOLTAGE RECTIFIERS 100nS RECOVERY AXIAL LEADED HERMETICALLY SEALED in. mm V , . T rr = 3000-5000V = 1 QA = 100nS 1.00(25.4) Min. .350(8.89) Max. .215(5.5) Max. •040±.003 (1,02±.08) ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS
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100nS
Z30UFG
Z40UFG
Z50UFG
000-5000V
100nS
100-C
50VDC
z50ufg
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Untitled
Abstract: No abstract text available
Text: Z30UF Z40UF Z50UF HIGH VOLTAGE RECTIFIERS EPOXY MOLDED, 100nS RECOVERY V = 3000-5000V = 750mA = 100nS rw m AXIAL LEADED RR in. mm ,200±.015 (5.08±.38) ,250±.015(6.35±.38) : •060±.003 (1.52±.06) .40(10.16)Min. T ELECTRICAL CHARACTERISTICS AND MAXIMUM RAT NGS
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100nS
Z30UF
Z40UF
Z50UF
000-5000V
750mA
100nS
50VDC
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