2SA1022
Abstract: XP06435 XP6435
Text: Composite Transistors XP06435 XP6435 Silicon PNP epitaxial planer transistor 0.2±0.05 5 6 ● 4 Features 0.2±0.1 Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. 5° ● 0.12+0.05 –0.02 1.25±0.10
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XP06435
XP6435)
2SA1022
2SA1022
XP06435
XP6435
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP06435 (XP6435) Silicon PNP epitaxial planar type (0.425) 0.2±0.05 5 6 4 1 5˚ • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half
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2002/95/EC)
XP06435
XP6435)
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Untitled
Abstract: No abstract text available
Text: Composite Transistors XP06435 XP6435 Silicon PNP epitaxial planar type (0.425) For high-frequency amplification 0.2±0.05 5 6 Unit: mm 0.12+0.05 –0.02 4 5˚ • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half
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XP06435
XP6435)
2SA1022
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2SA1022
Abstract: XP06435 XP6435
Text: Composite Transistors XP06435 XP6435 Silicon PNP epitaxial planer transistor Unit: mm For high-frequency amplification 1 6 2 5 3 4 0 to 0.1 2SA1022 x 2 elements 0.12 –0.02 0.9±0.1 ● 0.7±0.1 • Basic Part Number of Element +0.05 0.2 ● Two elements incorporated into one package.
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XP06435
XP6435)
2SA1022
2SA1022
XP06435
XP6435
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP06435 (XP6435) Silicon PNP epitaxial planar type (0.425) For high-frequency amplification 0.2±0.05 5 6 Unit: mm 0.12+0.05 –0.02 4 5˚ • Two elements incorporated into one package
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2002/95/EC)
XP06435
XP6435)
2SA1022
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2SA1022
Abstract: XP06435 XP6435
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP06435 (XP6435) Silicon PNP epitaxial planar type (0.425) For high-frequency amplification 0.2±0.05 5 6 Unit: mm 0.12+0.05 –0.02 4 5˚ • Two elements incorporated into one package
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2002/95/EC)
XP06435
XP6435)
2SA1022
XP06435
XP6435
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2SA1022
Abstract: XP06435 XP6435
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP06435 (XP6435) Silicon PNP epitaxial planar type (0.425) 0.2±0.05 5 6 4 1.25±0.10 2.1±0.1 • Features 5˚ Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b
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2002/95/EC)
XP06435
XP6435)
2SA1022
XP06435
XP6435
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2SA1022
Abstract: XP06435 XP6435
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP06435 (XP6435) Silicon PNP epitaxial planar type (0.425) For high-frequency amplification 0.2±0.05 5 4 M Di ain sc te on na tin nc ue e/ d 6 Unit: mm 0.12+0.05 –0.02
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2002/95/EC)
XP06435
XP6435)
2SA1022
XP06435
XP6435
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2SA1022
Abstract: XP6435
Text: Composite Transistors XP6435 Silicon PNP epitaxial planer transistor Unit: mm For high-frequency amplification 1 6 2 5 3 4 0 to 0.1 2SA1022 x 2 elements 0.12 –0.02 0.9±0.1 ● 0.7±0.1 • Basic Part Number of Element +0.05 0.2 ● Two elements incorporated into one package.
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XP6435
2SA1022
100MHz
2SA1022
XP6435
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MIP2F3
Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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PAMP13-N1
MIP2F3
MIP2F4
MIP382
MIP2E7DMY
mip2f2
mip291
MIP414S
MIP2E5DMY
mip411
MIP3E3SMY equivalent
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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2SC5936
Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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XP06501T
XP06531
XP06545
XP0A554
XP0D873
XP0D874
XP0D875
2SC5936
2SC6073
PANASONIC TRANSISTOR 2SC6073
2sc5929
MN1280
transistor 2SC6073
2SC5936 equivalent
2SC6074
TRANSISTOR 2SC5929
2sc5928
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mip411
Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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PAMP13-N1
mip411
MIP2F4
MIP2F3
AN12947a
mip2f2
MIP2F20MS
MIP2F40MS
mip2e7dmy
panasonic inverter dv 700 manual
mip291
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N2114
Abstract: marking som 6pin N2213 AE 3PIN ZD43
Text: S -5 b 7 § ^ 6 ÎS Ÿ / > i / z —V S Mini Type (6-pin) Package Outline * Transistors 0.425 mn m ID tO 1 O un CD 2 O L— Œ 3 S S ^ S ! ( 6 Ä i- ) A - y ^ - v li. S t# W S Í- M ( 3 ^ ) ¿ |5 li;/N " 7 X T 'h 7 > v 'X Í2 • f t ,1.25±0 1 • 4 ' ¿ " * f J& U / c K r f f i H ^
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