2SD0601A
Abstract: 2SD601A XP05501 XP5501
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP05501 (XP5501) Silicon NPN epitaxial planar type (0.425) 0.2±0.05 5 6 4 1.25±0.10 2.1±0.1 • Features 5˚ Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b
|
Original
|
PDF
|
2002/95/EC)
XP05501
XP5501)
2SD0601A
2SD601A
XP05501
XP5501
|
2SD0601A
Abstract: XP05501 XP5501
Text: Composite Transistors XP05501 XP5501 Silicon NPN epitaxial planer transistor 0.2±0.05 5 6 ● 4 Features 0.2±0.1 Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. 5° ● 0.12+0.05 –0.02 1.25±0.10
|
Original
|
PDF
|
XP05501
XP5501)
2SD0601A
2SD0601A
XP05501
XP5501
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP05501 (XP5501) Silicon NPN epitaxial planar type (0.425) For general amplification 0.2±0.05 5 6 Unit: mm 0.12+0.05 –0.02 4 5˚ • Two elements incorporated into one package
|
Original
|
PDF
|
2002/95/EC)
XP05501
XP5501)
2SD0601A
2SD601A)
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP05501 (XP5501) Silicon NPN epitaxial planar type (0.425) For general amplification 0.2±0.05 5 6 Unit: mm 0.12+0.05 –0.02 4 5˚ • Two elements incorporated into one package
|
Original
|
PDF
|
2002/95/EC)
XP05501
XP5501)
2SD0601A
2SD601A)
|
2SD601A
Abstract: XP5501
Text: Composite Transistors XP5501 Silicon NPN epitaxial planer transistor Unit: mm For general amplification 1 6 2 5 3 4 0 to 0.1 2SD601A x 2 elements 0.12 –0.02 0.9±0.1 ● 0.7±0.1 • Basic Part Number of Element +0.05 0.2 ● Two elements incorporated into one package.
|
Original
|
PDF
|
XP5501
2SD601A
2SD601A
XP5501
|
2SD0601A
Abstract: 2SD601A XP05501 XP5501 V40160
Text: Composite Transistors XP05501 XP5501 Silicon NPN epitaxial planar type (0.425) For general amplification 0.2±0.05 5 6 Unit: mm 0.12+0.05 –0.02 4 5˚ • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half
|
Original
|
PDF
|
XP05501
XP5501)
2SD0601A
2SD601A
XP05501
XP5501
V40160
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP05501 (XP5501) Silicon NPN epitaxial planar type (0.425) 0.2±0.05 5 4 1 0.2±0.1 M Di ain sc te on na tin nc ue e/ d • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half
|
Original
|
PDF
|
2002/95/EC)
XP05501
XP5501)
|
2SD0601A
Abstract: 2SD601A XP05501 XP5501
Text: Composite Transistors XP05501 XP5501 Silicon NPN epitaxial planer transistor Unit: mm For general amplification 1 6 2 5 3 4 0 to 0.1 2SD0601A(2SD601A) x 2 elements 0.12 –0.02 0.9±0.1 ● 0.7±0.1 • Basic Part Number of Element +0.05 0.2 ● Two elements incorporated into one package.
|
Original
|
PDF
|
XP05501
XP5501)
2SD0601A
2SD601A)
2SD601A
XP05501
XP5501
|
2SD0601A
Abstract: 2SD601A XP05501 XP5501
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP05501 (XP5501) Silicon NPN epitaxial planar type (0.425) For general amplification 0.2±0.05 5 4 M Di ain sc te on na tin nc ue e/ d 6 Unit: mm 0.12+0.05 –0.02 1 5˚ ue
|
Original
|
PDF
|
2002/95/EC)
XP05501
XP5501)
2SD0601A
2SD601A
XP05501
XP5501
|
MIP2F3
Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
|
Original
|
PDF
|
PAMP13-N1
MIP2F3
MIP2F4
MIP382
MIP2E7DMY
mip2f2
mip291
MIP414S
MIP2E5DMY
mip411
MIP3E3SMY equivalent
|
2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
|
Original
|
PDF
|
responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
|
2SC5936
Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
|
Original
|
PDF
|
XP06501T
XP06531
XP06545
XP0A554
XP0D873
XP0D874
XP0D875
2SC5936
2SC6073
PANASONIC TRANSISTOR 2SC6073
2sc5929
MN1280
transistor 2SC6073
2SC5936 equivalent
2SC6074
TRANSISTOR 2SC5929
2sc5928
|
mip411
Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
|
Original
|
PDF
|
PAMP13-N1
mip411
MIP2F4
MIP2F3
AN12947a
mip2f2
MIP2F20MS
MIP2F40MS
mip2e7dmy
panasonic inverter dv 700 manual
mip291
|
N2114
Abstract: marking som 6pin N2213 AE 3PIN ZD43
Text: S -5 b 7 § ^ 6 ÎS Ÿ / > i / z —V S Mini Type (6-pin) Package Outline * Transistors 0.425 mn m ID tO 1 O un CD 2 O L— Œ 3 S S ^ S ! ( 6 Ä i- ) A - y ^ - v li. S t# W S Í- M ( 3 ^ ) ¿ |5 li;/N " 7 X T 'h 7 > v 'X Í2 • f t ,1.25±0 1 • 4 ' ¿ " * f J& U / c K r f f i H ^
|
OCR Scan
|
PDF
|
|
|
3866S
Abstract: transistor a999 bs 7818 -1995 transistor tt 2206 A999 transistor TT 2206 transistor a1535A 8340UAS transistor 3866S 2SD 4515
Text: H Integrated Circuits MOS LSIs Page MOS LSI Type No. Page Type No. Page Type No. Page Type No. Page M N 171608 42 A M N 18P73210 43 M N 3210 69 M N 5179/H 91 M N 171609 42 AM N 18P73215 43 M N 3214 69 MN5181 91 M N 3102 69 M N 53 00 0 Series 55 M N 33 00 Series
|
OCR Scan
|
PDF
|
1020G
N12861
N12B62
MN1381
MN13811
MN13821
15P0802
15P5402
58851A
70803A
3866S
transistor a999
bs 7818 -1995
transistor tt 2206
A999 transistor
TT 2206 transistor
a1535A
8340UAS
transistor 3866S
2SD 4515
|
AN3962FB
Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Text: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030
|
OCR Scan
|
PDF
|
MN101C01C
MN101C01D
MN101C025
MN1020003
MN1020004A
MN1020004AFB
MN1020012A
MN1020
12AFA
MN1020015
AN3962FB
MN1880023
mn19412
MN1874033
IC AN7135
an3814k
MN1883214
an8294nsb
mn4117405
mn171202
|