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    Text: WTX1013 P-Channel 1.8-V G-S MOSFET P b Lead(Pb)-Free 3 FEATURES: 1 * TrenchFET@ Power MOSFET: 1.8-V Rated * Gate-Source ESD Protected: 2000V * High-Side Switching * Low On-Resistance: 1.2Ω * Low Threshold: 0.8 V (typ) * Fast Switching Speed: 14 ns * S-Prefix for Automotive and Other Applications Requiring


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    WTX1013 SC-89 06-Sep-2013 SC-89 50BSC PDF