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    VP2020L Search Results

    VP2020L Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    VP2020L Vishay Telefunken Original PDF
    VP2020L Unknown Shortform Datasheet & Cross References Data Short Form PDF
    VP2020L Temic Semiconductors P-Channel Enhancement Mode MOSFET Transistors Scan PDF
    VP2020L Vishay Siliconix Shortform Siliconix Datasheet Short Form PDF

    VP2020L Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BSS92

    Abstract: TP1220L TP2020L VP2020L TP/VP2020L
    Text: TP1220L, TP/VP2020L, BSS92 Siliconix PĆChannel EnhancementĆMode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TP1220L -120 20 @ VGS = -4.5 V -1 to -2.4 -0.12 TP2020L -200 20 @ VGS = -4.5 V -1 to -2.4 -0.12


    Original
    TP1220L, TP/VP2020L, BSS92 TP1220L TP2020L VP2020L O226AA) P-37994--Rev. BSS92 TP1220L TP2020L VP2020L TP/VP2020L PDF

    BSS92

    Abstract: marking s92 VP2020L 2020L S0427
    Text: VP2020L, BSS92 Vishay Siliconix P-Channel 200-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP2020L –200 20 @ VGS = –4.5 V –0.8 to –2.5 –0.12 BSS92 –200 20 @ VGS = –10 V –0.8 to –2.8 –0.15


    Original
    VP2020L, BSS92 VP2020L O-226AA) S-04279--Rev. 16-Jun-01 BSS92 marking s92 VP2020L 2020L S0427 PDF

    TP2020L

    Abstract: bss92 VP2020L TP1220L
    Text: TP1220L, TP/VP2020L, BSS92 P-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TP1220L –120 20 @ VGS = –4.5 V –1 to –2.4 –0.12 TP2020L –200 20 @ VGS = –4.5 V –1 to –2.4


    Original
    TP1220L, TP/VP2020L, BSS92 TP1220L TP2020L VP2020L O-226AA) P-37994--Rev. 08-Aug-94 TP2020L bss92 VP2020L TP1220L PDF

    BSS92

    Abstract: TP2020L TP1220L VP2020L
    Text: TP1220L, TP/VP2020L, BSS92 P-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TP1220L –120 20 @ VGS = –4.5 V –1 to –2.4 –0.12 TP2020L –200 20 @ VGS = –4.5 V –1 to –2.4


    Original
    TP1220L, TP/VP2020L, BSS92 TP1220L TP2020L VP2020L O-226AA) S-52426--Rev. 14-Apr-97 BSS92 TP2020L TP1220L VP2020L PDF

    bss92

    Abstract: VP2020L 2020L
    Text: VP2020L, BSS92 Vishay Siliconix P-Channel 200-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP2020L –200 20 @ VGS = –4.5 V –0.8 to –2.5 –0.12 BSS92 –200 20 @ VGS = –10 V –0.8 to –2.8 –0.15


    Original
    VP2020L, BSS92 VP2020L 18-Jul-08 bss92 VP2020L 2020L PDF

    vp2020l

    Abstract: No abstract text available
    Text: TP1220L, TP/VP2020L, BSS92 P-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TP1220L –120 20 @ VGS = –4.5 V –1 to –2.4 –0.12 TP2020L –200 20 @ VGS = –4.5 V –1 to –2.4


    Original
    TP1220L, TP/VP2020L, BSS92 TP1220L TP2020L VP2020L O-226AA) S-52426--Rev. 14-Apr-97 PDF

    Untitled

    Abstract: No abstract text available
    Text: VP2020L Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V)30 I(D) Max. (A)120m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)800m Minimum Operating Temp (øC)


    Original
    VP2020L PDF

    BSS92

    Abstract: VP2020L
    Text: VP2020L, BSS92 Vishay Siliconix P-Channel Enhancement-Mode MOSFET Transistors PRODUCT SUMMARY Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP2020L –200 20 @ VGS = –4.5 V –0.8 to –2.5 –0.12 BSS92 –200 20 @ VGS = –10 V –0.8 to –2.8


    Original
    VP2020L, BSS92 VP2020L O-226AA) S-00199--Rev. 1-Jan-00 BSS92 VP2020L PDF

    vp2020l

    Abstract: BSS92
    Text: VP2020L, BSS92 Vishay Siliconix P-Channel 200-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP2020L –200 20 @ VGS = –4.5 V –0.8 to –2.5 –0.12 BSS92 –200 20 @ VGS = –10 V –0.8 to –2.8 –0.15


    Original
    VP2020L, BSS92 VP2020L O-226AA 08-Apr-05 BSS92 PDF

    k2645

    Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
    Text: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt


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    MK135 MK136 MK137 MK138 MK139 MK140 Mk142 MK145 MK155 157kr k2645 k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417 PDF

    70611

    Abstract: FET pair n-channel p-channel mosfet discrete totem pole drive CIRCUIT 2n7000+complement 2n7000 complement logic level complementary MOSFET mosfet discrete totem pole CIRCUIT Logic Level p-Channel Power MOSFET AN804 Si9942DY
    Text: AN804 Vishay Siliconix P-Channel MOSFETs, the Best Choice for High-Side Switching Historically, p-channel FETs were not considered as useful as their n-channel counterparts. The higher resistivity of p-type silicon, resulting from its lower carrier mobility, put it at a


    Original
    AN804 retur5600 VP0300L O-226AA VN0300L TP0610L 2N7000 70611 FET pair n-channel p-channel mosfet discrete totem pole drive CIRCUIT 2n7000+complement 2n7000 complement logic level complementary MOSFET mosfet discrete totem pole CIRCUIT Logic Level p-Channel Power MOSFET AN804 Si9942DY PDF

    TCA780

    Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
    Text: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP


    Original
    1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP TCA780 TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G PDF

    2n7000 complement

    Abstract: VP0300L mosfet discrete totem pole drive CIRCUIT 2n7000+complement 2n7000 equivalent AN804 Si9939DY Si9942DY Si9958DY TP0610
    Text: AN804 Siliconix PĆChannel MOSFETs, the Best Choice for HighĆSide Switching Ed Oxner Circuit Applications Historically, pĆchannel FETs were not considered as useful as their nĆchannel counterparts. The higher resistivity of pĆtype silicon, resulting from its lower carrier mobility, put


    Original
    AN804 VP0300L O226AA VN0300L TP0610L 2N7000 VP2020L 2n7000 complement VP0300L mosfet discrete totem pole drive CIRCUIT 2n7000+complement 2n7000 equivalent AN804 Si9939DY Si9942DY Si9958DY TP0610 PDF

    VN10KLS

    Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
    Text: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated


    Original
    Si4831DY Si4833DY Si4852DY Si4816DY 10Single VN50300L VN50300T OT-23 VN66AFD VN10KLS mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05 PDF

    FET package TO-71

    Abstract: SST271 2N4416A JANTX TO72 package n-channel jfet jfet 2N5198 3N164 BSS92 TP2020L VP0808L VP2020L
    Text: Transistors Siliconix Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) Max (V) tON Max (ns) Ciss Typ (pF) ID Max (A) PD Max (W) –80 –100 –120 –200 –200 –200 –240 5 5 20 20 20 20 10 –4.5 –4.5 –2.4 –2.8 –2.5 –2.4 –2.5 55 55 25


    Original
    O-226AA VP0808L VP1008L TP1220L BSS92 VP2020L TP2020L VP2410L O-206AF 3N164 FET package TO-71 SST271 2N4416A JANTX TO72 package n-channel jfet jfet 2N5198 3N164 BSS92 TP2020L VP0808L VP2020L PDF

    p-channel mosfet bss92

    Abstract: vishay siliconix code marking to-92 bss92 70210 VP2410
    Text: VP2020L, BSS92 Vishay Siliconix P-Channel 200-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V ) rDS(on) Max ( Q ) VGS<th) (V ) I d (A) VP2020L -2 0 0 20 @ V q s = -4 .5 V -0 .8 to -2 .5 -0 .1 2 BSS92 -2 0 0 20 @ V qs = - 1 0 V -0 .8 t o -2 .8 -0 .1 5


    OCR Scan
    VP2020L, BSS92 VP2020L O-226AA 2410L S-04279-- 16-Jun-01 p-channel mosfet bss92 vishay siliconix code marking to-92 bss92 70210 VP2410 PDF

    vp2020l

    Abstract: IC 6201
    Text: VPDQ20 P-Channel Enhancement-Mode MOSFETs TYPE PACKAGE Single TO-92 TO-226AA VP2020L, BSS92 Single Chip • Available as VPDQ1CHP DEVICE TYPICAL CHARACTERISTICS 6-198 O u tp u t C h a ra cte ristics O hm ic Region C h a ra c te ris tic s V DS (V) V DS (V)


    OCR Scan
    VPDQ20 O-226AA) VP2020L, BSS92 VPDQ20 125X1 vp2020l IC 6201 PDF

    Untitled

    Abstract: No abstract text available
    Text: J ffiS S b VP2020L P-Channel Enhancement-Mode MOS Transistor PRODUCT SUMMARY V yp -2 0 0 20 V (BR)DSS TO-92 (TO-226AA) BOTTOM VIEW •d (A) - 0 .1 2 1 SOURCE 2 GATE 3 DRAIN Performance Curves: VPDQ20 3 1 ABSOLUTE MAXIMUM RATINGS (TA 25°C Unless Otherwise Noted)


    OCR Scan
    VP2020L O-226AA) VPDQ20 100-C PDF

    TP2020L

    Abstract: VP2020L BSS92 TP1220L TF1725
    Text: TP1220L, TP/VP2020L, BSS92 P-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number n>S on M a x (Q ) VGS(th) (V) I d (A ) TP1220L -120 20@ VGs = -4 .5 V -1 to -2.4 -0.12 TP2020L -200 20 @ VGs -1 to -2.4 -0.12 VP2020L -200 20@ Vg s = -4 .5 V


    OCR Scan
    tp1220l, tp/vp2020l, bss92 TP1220L TP2020L VP2020L BSS92 -100V O-226AA) S-52426â TF1725 PDF

    Untitled

    Abstract: No abstract text available
    Text: Temic TP1220L, TP/VP2020L, BSS92 Semiconductors P-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) n>s(on) Max (Q) VGS(th) (V) Id (A) TP1220L -120 20 @ Vq S = -4.5 V -1 to -2.4 -0.12 TP2020L -200 20 @ Vqs - - 4 - 5 V


    OCR Scan
    TP1220L, TP/VP2020L, BSS92 TP1220L TP2020L VP2020L S-52426â 14-Apr-97 00EE570 PDF

    Untitled

    Abstract: No abstract text available
    Text: VPDQ1 DIE P-Channel Enhancement-Mode MOS Transistor in c o r p o r a te d VPDQ1CHP* BSS92 TP2020L TP1220L VP2020L 0.038 ‘ Meets or exceeds specification for all part numbers listed below For additional design information please consult the 0. 965 ( 0 .254)


    OCR Scan
    BSS92 TP2020L TP1220L VP2020L VPDQ20. PDF

    BSS92

    Abstract: p-channel mosfet bss92
    Text: TP1220L, TP/VP2020L, BSS92 P-Channel Enhancement-Mode MOSFET Transistors Product Summary P art Number V BR DSS M in (V ) TP1220L -1 2 0 20 @ VGs = - 4 .5 V - I to - 2 .4 -0 .1 2 TP2020L -2 0 0 20 @ V Gs = - 4 5 V -1 to -2 .4 -0 .1 2 VP2020L -2 0 0 20 @ V GS = -4 .5 V


    OCR Scan
    TP1220L, TP/VP2020L, BSS92 TP1220L TP2020L VP2020L BSS92 S-52426--Rev. 14-Apr-97 p-channel mosfet bss92 PDF

    Untitled

    Abstract: No abstract text available
    Text: T em ic TP1220L, TP/VP2020L, BSS92_ sì„conix P-Channel Enhancement-Mode MOS Transistors Product Summary P art N um ber V BR DSS M in (V) r DS(on) M ax (£2) VGS(lh) (V) I d (A) TP1220L -1 2 0 20 @ V GS = -4 .5 V —1 to -2 .4 -0 .1 2 TP2020L -2 0 0


    OCR Scan
    TP1220L, TP/VP2020L, BSS92_ TP1220L TP2020L VP2020L BSS92 P-37994-- PDF

    VP2020

    Abstract: vp2020l
    Text: SILICONIX INC ÔSS473S 1ÛE D 0ümi2S VP2020 SERIES C7SiRcc3nix J.Æ P-Channel Enhancement-Mode MOS Transistors in c o rp o ra te d " T -3 TO-92 BOTTOM VIEW 1 SOURCE 2 GATE 3 DRAIN PRODUCT SUMMARY PART NUMBER Ö V BR DSS fDS(ON) (fl) (V) >D (A) PACKAGE TO-2Q6AC (TO-52)


    OCR Scan
    SS473S VP2020 VP2020L VP2020E O-206AC VPDQ20 VP2020E. 300Ms, PDF