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    Vishay Siliconix VN0300M

    670 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-237AA
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    VN0300M Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    VN0300M Unknown Shortform Datasheet & Cross References Data Short Form PDF
    VN0300M Unknown Semiconductor Master Cross Reference Guide Scan PDF
    VN0300M Unknown TRANS.L-MOSPOWER Scan PDF
    VN0300M Unknown FET Data Book Scan PDF
    VN0300M Siliconix MOSPOWER Design Data Book 1983 Scan PDF
    VN0300M Vishay Siliconix Shortform Siliconix Datasheet Short Form PDF

    VN0300M Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    programmable Sine Wave Generator 8086

    Abstract: db3 c705 ad639 datasheet Sine Wave Generator using 8051 pin diagram of ic 7493 square wave generator by 8051 AD7248 AD7245A AD7245AAN AD7245AAP
    Text: a FEATURES 12-Bit CMOS DAC with Output Amplifier and Reference Improved AD7245/AD7248: 12 V to 15 V Operation ؎1/2 LSB Linearity Grade Faster Interface—30 ns Typ Data Setup Time Extended Plastic Temperature Range –40؇C to +85؇C Single or Dual Supply Operation


    Original     		PDF 12-Bit AD7245/AD7248: Interface--30 Power--65 AD7245A AD7248A AD7245A/AD7248A AD7245A programmable Sine Wave Generator 8086 db3 c705 ad639 datasheet Sine Wave Generator using 8051 pin diagram of ic 7493 square wave generator by 8051 AD7248 AD7245AAN AD7245AAP

    S0211

    Abstract: VN03000 2SK738 nec 500t 2sk738 mosfet S0215 3N175 MPF6659 motorola *6659 2SK73
    Text: MOSFET Item Number Part Number Manufacturer V BR OSS (V) loss Max (A) Po Max (W) ros (on) (Ohms) gFS Min (S) VGS(th) CI. Max tr Max t, Max TOper Max (V) (F) (8) (8) eC) 8.0n 8.0n 13n 8.0n 13n 125 J 125 J 125 J 125 J 125 J 150 150 150 150 150 TO•72 TO·72


    Original     		PDF 2N7109 S0215 ZVN3302B TN0102N3 TN0602N3 TN0102N2 TN0602N2 SOF8104 S0211 VN03000 2SK738 nec 500t 2sk738 mosfet 3N175 MPF6659 motorola *6659 2SK73

    TCA780

    Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
    Text: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP


    Original     		PDF 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP TCA780 TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G

    mosfet cross reference

    Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
    Text: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is


    Original     		PDF T0-92 options4206A ZVN4206C ZVN4206E ZVN4306A TN2106K1 VN2210N3 TN0606N3 TN0606N6 mosfet cross reference pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode

    Untitled

    Abstract: No abstract text available
    Text: TN0201L/0401L, VN0300L/M N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TN0201L 20 1.2 @ VGS = 10 V 0.5 to 2 0.64 TN0401L 40 1.2 @ VGS = 10 V 0.5 to 2 0.64 VN0300L 30 1.2 @ VGS = 10 V


    Original     		PDF TN0201L/0401L, VN0300L/M TN0201L TN0401L VN0300L VN0300M O-226AA) S-52426--Rev. 14-Apr-97

    Untitled

    Abstract: No abstract text available
    Text: LC2MOS 12-Bit DACPORTs AD7245A/AD7248A a FEATURES 12-Bit CMOS DAC with Output Amplifier and Reference Improved AD7245/AD7248: 12 V to 15 V Operation ؎1/2 LSB Linearity Grade Faster Interface—30 ns Typ Data Setup Time Extended Plastic Temperature Range –40؇C to +85؇C


    Original     		PDF 12-Bit AD7245A/AD7248A AD7245/AD7248: AD7245A AD7248A AD7245A AD7245A/AD7248A AD7245/AD7248.

    VN0300M

    Abstract: VN0300D VQ7254J VQ7254P 25XX VP1001P VQ1001J VQ3001J VQ3001P VNMH03
    Text: Pulse width 80^s—300^s, Duty cycle 1%, Tc=25°C Part Numbers: VN0300D, VN0300M, VP1001P, VQ1001J, Segments 1 and 3: VQ3001P, VQ3001J, VQ7254P, VQ7254J Leakage Currents Ohmic Region T c — CASE TEMPERATURE (°C) ON Resistance Characteristics Temperature Effects on rps(on)


    OCR Scan     		PDF VNMH03 80pisâ 300pis, VN0300D, VN0300M, VP1001P, VQ1001J, VQ3001P, VQ3001J, VQ7254P, VN0300M VN0300D VQ7254J VQ7254P 25XX VP1001P VQ1001J VQ3001J VQ3001P VNMH03

    vn0300

    Abstract: VN0300L VNDQ03
    Text: VN0300 SERIES N-Channel Enhancement-Mode MOS Transistors TO-92 TO-226AA BOTTOM VIEW PRODUCT SUMMARY PART NUMBER V (B R |D S S VN0300L VN0300M >D " s r (A) PACKAGE 30 1.2 0.64 TO-92 30 1.2 0.67 TO-237 1 SOURCE 2 GATE 3 DRAIN BOTTOM VIEW TO-237 Performance Curves: VNDQ03


    OCR Scan     		PDF VN0300 O-226AA) VN0300L VN0300M O-237 VNDQ03 VN0300M VNDQ03

    VN46AFD

    Abstract: VNDQ1 vnd02 TD1001 VN46AF
    Text: m95SË VNDQ SERIES DIE N-Channel Enhancement-Mode MOS Transistors PART NUM BER V BR DSS (V) r DS(ON) VNDQ1CHP 30 1.2 VNDQ2CHP 60 1.8 (A) • • • • • TN0201L, TN0401L VN0300L, VN0300M VQ1001J/P (VNDQ03 x 4) TD1001Y (VNDQ03 x 2) TQ1001J (VNDQ03 x 4)


    OCR Scan     		PDF TN0201L, TN0401L VN0300L, VN0300M VQ1001J/P VNDQ03 TD1001Y TQ1001J VN46AFD VNDQ1 vnd02 TD1001 VN46AF

    VNDQ1CHP

    Abstract: VN0300M VNDQ1 VN0300 VNDQ03 TN0201L TN0401L VN0300L VQ1001J VQ1001P
    Text: ^CX Siliconix VN0300 SERIES N-Channel Enhancement-Mode MOS Transistors -AmM incorporated TO-92 TO-226AA BOTTOM VIEW PRODUCT SUMMARY PART NUMBER V(BR)DSS (V) rDS(ON) (Ù) •d (A) PACKAGE VN0300L 30 1.2 0.64 TO-92 VN0300M 30 1.2 0.67 TO-237 1 SOURCE 2 GATE


    OCR Scan     		PDF VN0300 O-226AA) VN0300L VN0300M O-237 VNDQ03 VN0300M VNDQ1CHP VNDQ1 VNDQ03 TN0201L TN0401L VQ1001J VQ1001P

    Untitled

    Abstract: No abstract text available
    Text: .BlSSSte VNDQ03 N-Channel Enhancement-Mode MOSFETs TYPE PACKAGE DEVICE Single TO-92 TO-226AA • VN0300L, TN0201L, TN0401L Single TO-237 • VN0300M Single 14-Pln Plastic • VQ1001J Quad 14-Pln Dual-ln-Une • VQ1001P Quad Chip • Available as VNDQ1CHP


    OCR Scan     		PDF VNDQ03 VN0300L, TN0201L, TN0401L VN0300M VQ1001J VQ1001P O-226AA) O-237 14-Pln

    VN0300M

    Abstract: 1256C
    Text: TN0201L/0401L, VN0300L/M N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDSion) Max (Q) TN0201L TN0401L VN0300L VN0300M 20 40 30 30 1.2 @ VGs = 10 V 1.2 @ VGs = 10 V 1.2 @ VGs = 10 V 1.2 @ V g s = 10 V Features Benefits


    OCR Scan     		PDF TN0201L/0401L, VN0300L/M TN0201L TN0401L VN0300L VN0300M O-226AA S-52426--Rev. 14-Apr-97 625H735 1256C

    TN0201L

    Abstract: No abstract text available
    Text: TN0201L/0401L, VN0300L/M N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number TN0201L TN0401L VN0300L VN0300M V BR DSS Min (V) 20 40 30 30 Features • • • • • r DS{on) Max (fi) 1.2 @ VGs = 10 V 1.2 @ VGs = 10 V 1.2 @ VGs = 10 V


    OCR Scan     		PDF TN0201L/0401L, VN0300L/M TN0201L TN0401L VN0300L VN0300M O-226AA S-52426--Rev. 14-Apr-97

    vn0300m

    Abstract: No abstract text available
    Text: SILICONIX INC 1ÔE D • GG3j MG7 4 b ■ VN0300 SERIES f X S ilicon ix X V 3254735 in c o r p o r a te d N-Channet Enhancement-Mode MOS Transistors T -S q -o S PRODUCT SUMMARY PART NUMBER TQ-205AD TO-39 V(BR)DSS fDS(ON) < ii) (V) Id (A) PACKAGE VN0300B


    OCR Scan     		PDF VN0300 VN0300B O-205AD TQ-205AD VN0300L VN0300M O-237 VNDQ03 O-237 VN0300B. vn0300m

    db3 c705

    Abstract: AD7248 AD639 DB711 db810 AD7245 12-Bit Digital-to-Analog Converter dip-20 5AGND
    Text: ANALOG DEVICES FEATURES 12-Bit C M O S DAC with Output Amplifier and Reference Parallel Loading Structure: AD7245 8 + 4 Loading Structure: AD7248 Single or Dual Supply Operation Fast Digital Interface (80ns W R Pulse) Low Power (65mW typ) 0.3”, Skinny, 20- and 24-Pin DIP


    OCR Scan     		PDF 12-Bit AD7245/AD7248 AD7245 AD7248 24-Pin 28-Terminal AD7245A/AD7248A AD7245/AD7248 12-bit, db3 c705 AD639 DB711 db810 AD7245 12-Bit Digital-to-Analog Converter dip-20 5AGND

    VQ1000P

    Abstract: VN10L siliconix VN10KM VN0610L VN10KE VN10KM VN10LE VN10LM VN2222L VQ1000J
    Text: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdown Voltage (Volts) •d Continuous (Amps) 60 60 5.0 5.0 240 240 170 170 6.0 10.0 6.0 Power Dissipation (Watts) . Part Number 0.2 0.2 0.315 0.315 VN10KE VN10LE 0.3 0.25 0.3 0.25 0.3 0.25


    OCR Scan     		PDF vn10ke vn10le to-52 vn2406m vn2410m VW1706M vn1710m vn1206m vn1210m vn0808m VQ1000P VN10L siliconix VN10KM VN0610L VN10KE VN10KM VN10LE VN10LM VN2222L VQ1000J

    irf540 TTL

    Abstract: IRF620 IRF622 IRF630 IRF631 IRF632 IRF633 IRF640 IRF641 IRF642
    Text: Pin© jopeies aaMOdSOW MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 11 TO-39 1 -6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170 150 150 150 150


    OCR Scan     		PDF IRF640 IRF642 IRF630 IRF632 IRF620 IRF622 VN1706D IRF641 IRF643 IRF631 irf540 TTL IRF620 IRF622 IRF630 IRF631 IRF632 IRF633 IRF640 IRF641 IRF642

    buz 350 equivalent

    Abstract: VN0109n5 analog VN10KM equivalent supertex VN10KE VN67ad analog VN0300M equivalent VQ1004 equivalent vq1004 sony 2sj54 siliconix VN10KM
    Text: Siliconix 1-1? f l MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdown Voltage (Volts) •d Continuous (Amps) Power Dissipation (Watts) . Part Number 60 60 5.0 5.0 0.2 0.2 0.315 0.315 VN10KE VN10LE 240 240 170 170 10.0 6.0 0.3 0.25


    OCR Scan     		PDF O-220 VN1000D IRF522 VN1000A IRF540 IRF632 IRF640 buz 350 equivalent VN0109n5 analog VN10KM equivalent supertex VN10KE VN67ad analog VN0300M equivalent VQ1004 equivalent vq1004 sony 2sj54 siliconix VN10KM

    VN0300M

    Abstract: siliconix VN10KM VN0606M 25XX VN0300D VP1001P VQ1001J VQ3001J VQ3001P VQ7254J
    Text: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdown Voltage (Volts) 60 60 • d Continuous (Amps) Power Dissipation (Watts) . Part Number 5.0 5.0 0.2 0.2 0.315 0.315 VN10KE VN10LE 6.0 0.3 0.25 0.3 0.25 0.3 0.25 0.35 0.4 0.3 0.3 0.25


    OCR Scan     		PDF vn10ke vn10le to-52 vn2406m vn2410m VW1706M vn1710m vn1206m vn1210m vn0808m VN0300M siliconix VN10KM VN0606M 25XX VN0300D VP1001P VQ1001J VQ3001J VQ3001P VQ7254J

    VN2410L equivalent

    Abstract: VN1210M equivalent VN2410L "cross reference" VN2410M VN0300M equivalent MTM8N20 VN1710M IRF340 IRF350 IRF450
    Text: 1-17 MOSPOWER Cross Reference List c « g s s <0J= i n i n m i n • - CM CM CM ^ • 'd d d o d 1o o o o o I m iD lO m | ' r r r 's ' I O O < O Ò I I I I I | ' ' ' lO ' I P ' ' ' ' I I j j CO00 COCO j j ' I o o r i mm | ioom m I L -^ ^ l I c\i CM i I I I I OOOO ' ' I


    OCR Scan     		PDF ivn6100tnu to-39 ivn6200cnd to-220 vn0401d ivn6200cne t0-220 irf533 ivn6200cnf VN2410L equivalent VN1210M equivalent VN2410L "cross reference" VN2410M VN0300M equivalent MTM8N20 VN1710M IRF340 IRF350 IRF450

    BSR78

    Abstract: VP0300M VP0808L 041 itt diode VP0300B VP0808B VP0808M VP1008B VP1008L VP1008M
    Text: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) rDS(on) (Ohms) >D Continuous (Amps) •100 -8 0 -3 0 5.0 5.0 2.5 0.9 0.9 100 -8 0 -3 0 5.0 5.0 2.5 -1 0 0 -8 0 Powor Dissipation (Watts) Part Number 6.25 6.25 6.25 VP1008B


    OCR Scan     		PDF VP1008B VP0808B VP0300B O-237Ã VP1008M VP0808M VP0300M VP1008L VP0808L 14-Pln BSR78 VP0300M VP0808L 041 itt diode VP0300B

    2N6658

    Abstract: VN66AF siliconix VN10KM VN89AF VN88AF 2n6657 2N6656 VN67 VN80AF VN89AD
    Text: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdow n V olta ge (Volts) 60 60 • d C on tin u ou s (Amps) Power D issipation (Watts) . Part Num ber 0.2 0.2 0.315 0.315 VN10KE VN10LE 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0


    OCR Scan     		PDF vn10ke vn10le to-52 vn2406m vn2410m VW1706M vn1710m vn1206m vn1210m vn0808m 2N6658 VN66AF siliconix VN10KM VN89AF VN88AF 2n6657 2N6656 VN67 VN80AF VN89AD

    Untitled

    Abstract: No abstract text available
    Text: Tem ic siliC0Dl>_ TN0201L/0401L, VN0300L/M N-Channel Enhancement-Mode MOS Transistors Product Summary P a rt N um ber '' BR DSS M in (V) r DS(on) M ax (£2) y<3S(th) (V) I d (A) TN0201L 20 1.2 @ VGS = 10 V 0.5 to 2 0.64 TN0401L 40 1.2 @ VGS = 10 V


    OCR Scan     		PDF TN0201L/0401L, VN0300L/M TN0201L TN0401L VN0300L VN0300M P-37992--Rev.

    hh 004 TO92

    Abstract: VN2406M VN2406L vn1710m VN1206M VN1706M VN2406B siliconix VN10KM VN2410M VN1206L
    Text: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdown Voltage (Volts) •d Continuous (Amps) Power Dissipation (Watts) . Part Number 60 60 5.0 5.0 0.2 0.2 0.315 0.315 VN10KE VN10LE 240 240 170 170 10.0 6.0 0.3 0.25 0.3 0.25 0.3 0.25 0.35


    OCR Scan     		PDF vn10ke vn10le to-52 vn2406m vn2410m VW1706M vn1710m vn1206m vn1210m vn0808m hh 004 TO92 VN2406M VN2406L vn1710m VN1206M VN1706M VN2406B siliconix VN10KM VN2410M VN1206L