D1915
Abstract: V1660 Q74-70 D69-65 Q393
Text: CQV16100 • CQV1690 · CQV1680 · CQV1670 · CQV1660 · CQV1650 · V1640 · CQV1630 ChannelQTM 3.3 Volt Synchronous 16 Channel Queue Memory Configuration Device 65,536 x 80 32,768 x 80 16,384 x 80 8,192 x 80 4,096 x 80 2,048 x 80 1,024 x 80 512 x 80 CQV16100
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CQV16100
CQV1690
CQV1680
CQV1670
CQV1660
CQV1650
CQV1640
CQV1630
D1915
V1660
Q74-70
D69-65
Q393
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V1640
Abstract: MSM51V16405D MSM51V16405DSL
Text: E2G0124-17-61 O K I Semiconductor MSM5 1V1 6 4 0 5 P/PSL 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION TheMSM51 V16405D/DSL is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The V16405D/DSL achieves high integration, high-speed operation,
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E2G0124-17-61
MSM51V16405P
MSM51V16405PSL
304-Word
TheMSM51
V16405D/DSL
MSM51V16405D/DSL
MSM51V16405D
/24-pin
V1640
MSM51V16405DSL
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Untitled
Abstract: No abstract text available
Text: PRE LIM IN AR Y- - May 1996 Edition 1.0 FUJITSU PRODUCT PROFILE SHEET MB8 1 V16405A-60/-70 CMOS 4M x 4 BIT HYPER PAGE MODE DYNAMIC RAM CMOS 4,194,304 x 4 BIT Hyper Page Mode Dynamic RAM The Fujitsu V16405A is a fully decoded CMOS Dynamic RAM DRAM that contains
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V16405A-60/-70
MB81V16405A
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HA11A
Abstract: No abstract text available
Text: PRELIMINARY - - FUJITSU May 1995 Edition 1.0 PRODUCT PROFILE SHEET MB 81 V16400A - 50 / - 60/-70 CMOS 4M X 4 BIT FAST PAGE MODE DYNAMIC RAM CMOS 4,194,304 x 4 BIT Fast Page Mode Dynamic RAM T h e F ujitsu M B 8 1 V 1 6 4 0 0 A is a fu lly d e c o d e d C M O S D yn a m ic RAM D R A M th a t co n ta in s
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V16400A
HA11A
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI HY51V17400B,HY51 V16400B 4Mx4, Fast Page mode DESCRIPTION This fam ily is a 16M bit dynam ic RAM organized 4,194,304 x 4 -bit configuration w ith Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this
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HY51V17400B
V16400B
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TC51V16405
Abstract: TC51V16405c
Text: INTEGRATED TOSHIBA " O S H I B A MOS DIGITAL I NT EGR AT ED CIRCUIT ” 51 V 16405 C5JS CST5 - SO TCS1V1c405 CSJ S/CSTS- 60 CIRCUIT TECHNICAL DATA SILICON GATE CMOS TENTATIVE DATA 4,194,304 W O RD x 4 BIT FAST PAGE DYNAM IC RAM DESCRIPTION The V16405CSJS/CSTS is fast page dynamic RAM organized 4,194,304 words by 4 bits. The
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TCS1V1c405
TC51V16405CSJS/CSTS
300mil)
TCS1V16405
TC51V16405
SOJ26
TSOP26
TC51V16405c
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI H Y 5 1 V 1 7 4 0 4 B ,H Y 5 1 V 1 6 4 0 4 B 4Mx4, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 4,194,304 x 4-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process
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Untitled
Abstract: No abstract text available
Text: MEMORY CMOS 4 M x 4 BITS HYPER PAGE MODE DYNAMIC RAM V16405A-60/-70 CMOS 4,194,304 x 4 BITS Hyper Page Mode Dynamic RAM • DESCRIPTION The Fujitsu V16405A is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory cells accessible in 4-bit increments. The V16405A features a “hyper page” mode of operation whereby high
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MB81V16405A-60/-70
MB81V16405A
MB81V16405A
26-LEAD
LCC-26P-M09)
0321TYP
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Untitled
Abstract: No abstract text available
Text: MEMORY CMOS 4 M x 4 BIT HYPER PAGE MODE DYNAMIC RAM V16405B-50/-60 CMOS 4,194,304 x 4 Bit Hyper Page Mode Dynamic RAM • DESCRIPTION The Fujitsu V16405B is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory cells accessible in 4-bit increments. The V16405B features a “hyper page” mode of operation whereby high
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MB81V16405B-50/-60
MB81V16405B
MB81V16405B
26-pin
FPT-26P-M05)
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Untitled
Abstract: No abstract text available
Text: DRAM 4 • DRAM - Low Voltage Versions (CMOS) Vcc= +3.3V+0.3V, Ta=0°C to +70°C Organization (Wx b ) Access Time max. (ns) Part Number Cycle Time min. (ns) Power Consumption max. (mW) Packages Standby Mode ! (CMOS level) SOJ TSOP 1.8 26P 26P 0.54 26P 26P
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B81V16400A-60
B81V16400A-70
6400A-60L
1V16400A-70L
B81V17400A-60
B81V17400A-70
7400A-60L
B81V17400A-70L
16400B-50
MB81V1640QB-60
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Untitled
Abstract: No abstract text available
Text: MEMORY V16405A-60/-70 CMOS 4,194,304 x 4 BITS Hyper Page Mode Dynamio RAM • DESCRIPTION The Fujitsu V16405A is a fully decoded CMOS Dynamic RAM DRAM^-t-hat'"contains 16,777,216 memory cells accessible in 4-bit increments.The V16405A features a ^peFipage^m ode of operation whereby high
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MB81V16405A-60/-70
MB81V16405A
F9703
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3a92
Abstract: No abstract text available
Text: •H YU ND AI HY51V17404C, V16404C 4M x 4-bit CMOS DRAM with Extended Data Out PRELIMINARY DESCRIPTION ORDERING INFORMATION This fa m ily is a 16M bit dynam ic RAM organized 4,194,304 x 4 -b it configuration with Extended Data O ut m ode C M O S DRAMs. Extended Data Out m ode
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HY51V17404C,
HY51V16404C
Y51V17404CJ
HY51V17404CSLJ
Y51V17404CT
HY51V17404CSLT
HY51V16404CJ
HY51V16404CSLJ
HY51V16404CT
HY51V16404CSLT
3a92
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hyundai hy 214
Abstract: UL-96 SH17 wl33
Text: • HYUNDAI HY51V17404B, V16404B 4M x 4-bit CMOS DRAM with Extended Data Out DESCRIPTION ORDERING INFORMATION T his fa m ily is a 16M bit dynam ic RAM organized 4,194,304 x 4-bit configuration with Extended Data Out m ode CM O S DRAMs. Extended Data Out mode
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HY51V17404B,
HY51V16404B
HY51V17404BJ
HY51V17404BSLJ
HY51V17404BT
HY51V17404BSLT
HY51V16404BJ
HY51V16404BSLJ
HY51V16404BT
HY51V16404BSLT
hyundai hy 214
UL-96
SH17
wl33
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Untitled
Abstract: No abstract text available
Text: «HYUNDAI HY51V17400A, V16400A 4M x 4-bit CMOS DRAM DESCRIPTION ORDERING INFORMATION T his fa m ily is a 16M bit dyn a m ic RAM organized 4,194,304 x 4 -b it configuration w ith Fast Page m ode C M O S DRAM s. Fast Page m ode offers high speed random access o f m em ory cells within the sam e row.
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HY51V17400A,
HY51V16400A
HY51V17400AJ
HY51V17400ASLJ
HY51V17400AT
HY51V17400ASLT
HY51V16400AJ
HY51V16400ASLJ
HY51V16400AT
HY51V16400ASLT
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HY51V17404B
Abstract: No abstract text available
Text: •HYUNDAI H Y 5 1 V 1 7 4 0 4 B .H Y 5 1 V 1 6 4 0 4 B 4M x4, E xten ded Data O ut m ode DESCRIPTION T h is fa m ily is a 16M b it d y n a m ic RAM o rg a n iz e d 4 ,1 9 4 ,3 0 4 x 4 -b it c o n fig u ra tio n w ith E x te n d e d D a ta O u t m od e C M O S
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HY51V17404B
V16404B
A0-A11)
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs V16400CJ,TP-5,-6,-7,-5S,-6S,-7S _FAST PAGE MODE 16777216-BIT 4194304-WQRD BY 4-BIT DYNAMIC RAM DESCRIPTION This is a fam ily of 4194304-word by 4-bit dynamic RAMs, fabricated with the high performance CMOS process, and is ideal
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M5M4V16400CJ
16777216-BIT
4194304-WQRD
4194304-word
4V1640QCJ
M5M4V16400CJJP-5
M5M4V164Q0CJ
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M5M4V16405
Abstract: No abstract text available
Text: MITSUBISHI LSIs Rev.1.0 V16405DJJP -5r 6,-7r 5Sr 6Sr 7S EDO (HYPER PAGE) MODE 16777216-BIT ( 4194304-WQRD BY 4-BIT ) DYNAMIC RAM D E S C R IP T IO N This is a fam ily of 4194304-word by 4-bit dynam ic RAMs with EDO (Extended Data Out : Hyper Page) mode function, fabricated with
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M5M4V16405DJJP
16777216-BIT
4194304-WQRD
4194304-word
refres16777216-BIT
Note31)
M5M4V16405
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Untitled
Abstract: No abstract text available
Text: MEMORY CMOS 4 M x 4 BIT FAST PAGE MODE DYNAMIC RAM V16400B-50/-60 CMOS 4,194,304 x 4 Bit Fast Page Mode Dynamic RAM • DESCRIPTION The Fujitsu V16400B is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory cells accessible in 4-bit increments. The V16400B features a “fast page” mode of operation whereby high
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MB81V16400B-50/-60
MB81V16400B
MB81V16400B
26-pin
FPT-26P-M05)
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Untitled
Abstract: No abstract text available
Text: MEMORY 4 M X 4 BIT HYPER PAGE MODE DYNÄMIG RÄ V16405B-50/-60/-50L/-60L CMOS 4,194,304 x 4 Bit Hyper Page Mode Dynamic RAM DESCRIPTION The Fujitsu V16405B is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory cells accessible in 4-bit increments. The V16405B features a “hyper page” mode of operation whereby high
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MB81V16405B-50/-60/-50L/-60L
MB81V16405B
F9712
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Untitled
Abstract: No abstract text available
Text: MEMORY 4 M X 4 BIT. E A S ll^ V16400B-50/-60/-50L/-60L CMOS 4,194,304 x 4 Bit Fast Page Mode Dynamic RAM DESCRIPTION The Fujitsu V16400B is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory cells accessible in 4-bit increments. The V16400B features a “fast page” mode of operation whereby high
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MB81V16400B-50/-60/-50L/-60L
MB81V16400B
F9712
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Untitled
Abstract: No abstract text available
Text: P RE LIM IN A RY - - May 1996 Edition 1.0 FUJITSU PRODUCT PROFILE SHEET M B 81 V 1 6405A-60/-70 CMOS 4M x 4 BIT HYPER PAGE MODE DYNAMIC RAM CM O S 4,194,304 x 4 BIT Hyper Page Mode Dynamic RAM The Fujitsu V16405A is a fully decoded CMOS Dynamic RAM DRAM that contains
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405A-60/-70
MB81V16405A
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mv1650
Abstract: MV1620 MV1622 MV1624 MV1626 MV1628 MV1630 MV1632 MV1634 MV1636
Text: MV1620 thru MV1650 SILICON Silicon Epieap diodes, epitaxial passivated tuning diodes designed for AFC applications in radio, TV, and general electronic-tuning. MAXIMUM RATINGS (Tc = 2 5 * C u nless otherwise noted) Rating Symbol Value Unit VR 20 Volts 250
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MV1620
MV1650
Vol1620
MV1622
MV1624
MV1626
MV1628
MV1630
MV1632
MV1634
mv1650
MV1626
MV1634
MV1636
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