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Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD UT2311 Power MOSFET -4A, -20V P-CHANNEL ENHANCEMENT MODE MOSFET  FEATURES * Extremely low on-resistance due to high density cell * Perfect thermal performance and electrical capability with advanced technology of trench process	Original	UT2311 UT2311G-AE3-R OT-23 QW-R502-365	PDF
Untitled Abstract: No abstract text available Text: UNISONICTECHNOLOGIESCO., LTD UT2311 Power MOSFET 2 0 V P-CH AN N EL EN H AN CEM EN T M ODE M OSFET ̈ FEAT U RES * Extremely low on-resistance due to high density cell * Perfect thermal performance and electrical capability with advanced technology of trench process	Original	UT2311 UT2311L-AE3-R UT2311G-AE3-R OT-23 QW-R502-365	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD UT2311 Preliminary Power MOSFET 20V P-CHANNEL ENHANCEMENT MODE MOSFET FEATURES * Extremely low on-resistance due to high density cell * Perfect thermal performance and electrical capability * With advanced technology of trench process	Original	UT2311 UT2311G-AE3-R OT-23 QW-R502-365	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD UT2311 Power MOSFET 20V P-CHANNEL ENHANCEMENT MODE MOSFET FEATURES * Extremely low on-resistance due to high density cell * Perfect thermal performance and electrical capability with advanced technology of trench process	Original	UT2311 UT2311L-AE3-R UT2311G-AE3-R OT-23 QW-R502-365	PDF