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    UPG106P Search Results

    UPG106P Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    UPG106P NEC 2.5 GHz WIDE-BAND AGC AMPLIFIER Scan PDF

    UPG106P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    UPG106B

    Abstract: BF08 UPG106P
    Text: SEC 2.5 GHz WIDE-BAND AGC AMPLIFIER FEATURES OUTLINE DIM ENSIONS UPG106B UPG106P Units in mm O UTLINE BF08 • W ID E O P E R A T IN G F R E Q U E N C Y RAN G E : f = 100 K H z to 2.5 G H z • H IG H P O W E R G A IN : G p = 2 0 dB TYP • G A IN C O N T R O L R A N G E : G agc = 35 d B TYP


    OCR Scan     		PDF UPG106B UPG106P UPG106B, BF08 UPG106P

    Untitled

    Abstract: No abstract text available
    Text: 2.5 GHz WIDE-BAND AGC AMPLIFIER OUTLINE DIMENSIONS FEATURES UPG106B UPG106P Units in mm OUTLINE BF08 • W ID E O PERATING FREQ UENC Y RANGE: f = 100 KHz to 2.5 GHz • H IG H POW ER GAIN: G p = 20 dB TYP • GAIN C O N TR O L RANGE: G agc = 35 dB TYP DESCRIPTION AND APPLICATIONS


    OCR Scan     		PDF UPG106B UPG106P UPG106B UPG106B,

    Untitled

    Abstract: No abstract text available
    Text: 2.5 GHz WIDE-BAND AGC AMPLIFIER UPG106B UPG106P POWER GAIN vs. FREQUENCY FEATURES_ • WIDE OPERATING FREQUENCY RANGE: f= 100 to 2.5 GHz • HIGH POWER GAIN: G p = 20 dB TYP • GAIN CONTROL RANGE: G agc = 35 dB TYP • WIDE OPERATING TEMPERATURE RANGE


    OCR Scan     		PDF UPG106B UPG106P JPG106B UPG106B, UPG106P

    Untitled

    Abstract: No abstract text available
    Text: NEC 2.5 GHz WIDE-BAND AGC AMPLIFIER UPG106B UPG106P PRELIMINARY OUTLINE DIMENSIONS FEATURES Units in mm OUTLINE BF08 • W ID E O P E R A T IN G F R E Q U E N C Y R A N G E : f = 100 K H z to 2.5 G H z • H IG H P O W E R G AIN : G p = 20 d B T Y P • G AIN C O N T R O L R A N G E : G a g c = 35 d B T Y P


    OCR Scan     		PDF UPG106B UPG106P UPG106B, SS8-3500 34-8393/FAX NOTICE-1483

    SVI 3104 c

    Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
    Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or


    OCR Scan     		PDF AN83301-1 NE24615 AN83302 AN83303-1 NE71083 NE70083 AN83901 AN85301 11/86-LN AN86104 SVI 3104 c UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720

    prescaler 120 ghz

    Abstract: BF08 uPG504 5 GHz DIVIDE-BY-2 STATIC PRESCALER UPG100B
    Text: GaAs MMIC Selection Guide WIDEBAND AMPLIFIERS Electrisai Characteristics @ Ta « 25°C Test Conditions Gain dB NF (dB) Pan Frequency Ruga AG (dB) Number (GHz) IP G 1 0 0 B 0.05 to 3.0 V dd = +5V VGG = -5V 16 ±1.5 2.7 IP G 1 0 1 B 0.05 to 3.0 V dd = +8V


    OCR Scan     		PDF