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    UPB2010B Search Results

    UPB2010B Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    UPB2010B Cree 10W, 2.0GHz, 24V Broadband RF Power NPN Bipolar Transistor Original PDF

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    J645

    Abstract: J626 transistor J626 ultrarf UPB2010B J626 Transistor
    Text: URFDB Sec 03_2010B 11/3/99 10:31 AM Page 3-42 UPB2010B 10W, 2.0GHz, 24V Broadband RF Power NPN Bipolar Transistor Description This device is designed for base station applications up to frequencies of 2.0GHz. Rated with a minimum output power of 10W, it is ideal for CDMA, TDMA, GSM, FM,


    Original     		PDF 2010B UPB2010B 30dBc 130mA 100oC 175oC J645 J626 transistor J626 ultrarf UPB2010B J626 Transistor