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    Toshiba America Electronic Components TPC8111(TE12L,Q,M)

    MOSFET P-CH 30V 11A 8SOP
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    Toshiba America Electronic Components TPC8111

    MOSFET P-CH 30V 11A SOP8 2-6J1B
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    Win Source Electronics TPC8111 28,468
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    TPC8111 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TPC8111 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    TPC8111 Toshiba TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV) Original PDF
    TPC8111(TE12L,Q,M) Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 30V 11A SOP8 2-6J1B Original PDF

    TPC8111 Datasheets Context Search

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    tpc8111

    Abstract: PF396
    Text: TPC8111 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS IV TPC8111 Lithium Ion Battery Applications Notebook PC Applications Unit: mm Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 8.1 mΩ (typ.)


    Original     		PDF TPC8111 tpc8111 PF396

    tpc8111

    Abstract: No abstract text available
    Text: TPC8111 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS IV TPC8111 Lithium Ion Battery Applications Notebook PC Applications Unit: mm Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 8.1 mΩ (typ.)


    Original     		PDF TPC8111 tpc8111

    TPC8111

    Abstract: No abstract text available
    Text: TPC8111 東芝電界効果トランジスタ シリコンPチャネルMOS形 U-MOS IV TPC8111 ○ リチウムイオン 2 次電池用 ○ ノートブック PC 用 ○ 携帯電子機器用 • 単位: mm 小型薄型で実装面積が小さい。 •


    Original     		PDF TPC8111 TPC8111

    TPC8111

    Abstract: No abstract text available
    Text: TPC8111 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS IV TPC8111 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 8.1 mΩ (typ.)


    Original     		PDF TPC8111 TPC8111

    tpc8111

    Abstract: No abstract text available
    Text: TPC8111 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS IV TPC8111 Lithium Ion Battery Applications Notebook PC Applications Unit: mm Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 8.1 mΩ (typ.)


    Original     		PDF TPC8111 tpc8111

    TPC8111

    Abstract: No abstract text available
    Text: TPC8111 東芝電界効果トランジスタ シリコンPチャネルMOS形 U-MOS IV TPC8111 ○ リチウムイオン 2 次電池用 ○ ノートブック PC 用 ○ 携帯電子機器用 • 単位: mm 小型薄型で実装面積が小さい。 •


    Original     		PDF TPC8111 TPC8111

    tpc8111

    Abstract: TPC8111 equivalent
    Text: TPC8111 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS IV TPC8111 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications • Unit: mm Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 8.1 mΩ (typ.)


    Original     		PDF TPC8111 tpc8111 TPC8111 equivalent

    Untitled

    Abstract: No abstract text available
    Text: TPC8111 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS IV TPC8111 Lithium Ion Battery Applications Notebook PC Applications Unit: mm Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 8.1 mΩ (typ.)


    Original     		PDF TPC8111

    TPC8111

    Abstract: No abstract text available
    Text: TPC8111 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS IV TPC8111 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications • Unit: mm Small footprint due to small and thin package · Low drain-source ON resistance: RDS (ON) = 8.1 mΩ (typ.)


    Original     		PDF TPC8111 TPC8111

    5252 F 1009 4-pin

    Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
    Text: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


    Original     		PDF

    tpc8107

    Abstract: tpc8107 mosfet TPC8107 application circuit 7179 TPCS8210 application TPC8110 tpc8107 equivalent US6 KEC MAX1717 TPC6002
    Text: Power MOSFETs TPC Series PRODUCT GUIDE Toshiba Power Compact Series devices have been developed for use in high-speed switching applications and in various interfaces. Toshiba has developed this high-efficiency low ON-resistance series using processes specially formulated to ensure that the devices can be used in


    Original     		PDF 3525C-0209 tpc8107 tpc8107 mosfet TPC8107 application circuit 7179 TPCS8210 application TPC8110 tpc8107 equivalent US6 KEC MAX1717 TPC6002

    2SK2056

    Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
    Text: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1


    Original     		PDF BCE0017B 2SK2056 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078

    39T0167

    Abstract: U-558 Socket AM2 ADP3205 rome 455D NO10V 1D93 ibm rome BI 335A
    Text: A B C D E F G H J K L M N DATE REL 9 EC NO. 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. 17. 18. 19. 20. 21. 22. 23. 24. 25. 26. 27. 28. 29. 30. 31. 32. 33. 34. 35. 36. 37. 38. 39. 40. 41. 42. 43. 44. 7 6 5 4 3 2 1 TITLE PAGE EC HISTORY CPU 1/3


    Original     		PDF DEC/07/04 J79495 39T0167 1/16W R1003 R1002 LMV431 R1004 39T0167 U-558 Socket AM2 ADP3205 rome 455D NO10V 1D93 ibm rome BI 335A

    lenovo

    Abstract: TP8370 TP8107 TP8117 TP8111 C9041 C9045 TP8116 lenovo t42 TP8109
    Text: A B C D E F G H I J K L M N O DC-IN PAGE 75 9 9 ITP CONNECTOR PAGE 6 CLK GEN Merom SFF PAGE 3,4,5 THERMAL SENSEER 8 VCC3_EC/VCC5M TI51220 PAGE 19 ICS954309 PAGE 81 AGTL+ FSB 800/667MHz 4X Data 2X Address PAGE 69 1R25AMT (BD3508) PAGE 88 LVDS SO-DIMM DRAM


    Original     		PDF ICS954309 TI51220) 800/667MHz 1R25AMT BD3508) 533/667MHz VCC1R5M/VCC1R05B MAX1540) MAX8632) ADP3207) lenovo TP8370 TP8107 TP8117 TP8111 C9041 C9045 TP8116 lenovo t42 TP8109

    474j capacitor

    Abstract: AN12942A bd7 c836 476j 13R1088 radeon R515 692N 2A 473J D20001 596B
    Text: A B C D E F G H J K L M N DATE REL 9 EC NO. 11/21/03 Q 13R1088 J45843A ROME-1 PLANAR M9/KINNERETH-R/WO-ACC BASE VER 0.99 P PART NO. 9 DEVELOPMENT NO. Q/M /82 1 NOV/21/2003 8 8 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. 17. 18. 19. 20. 21. 22.


    Original     		PDF J45843A 13R1088 NOV/21/2003 474j capacitor AN12942A bd7 c836 476j 13R1088 radeon R515 692N 2A 473J D20001 596B

    558B

    Abstract: S558-5999-U1 F ky U10 ADP3205 PMH4 C949
    Text: CR-1 : @DESIGN.J3E SCH_1 :PAGE1 A B C D E G F H J K L M N DATE 9 YUKON/KODIAK VER SE 10/20/03 PLANAR 10/20/2003 7 6 5 4 3 2 1 TITLE PAGE EC HISTORY CPU(1/3) CPU(2/3) CPU(3/3) ITP CONN VCCCPUCORE DECOUPLING GMCH-M(1/5) GMCH-M(2/5) GMCH-M(3/5) GMCH-M(4/5) GMCH-M(5/5)


    Original     		PDF AD1981B VINT16 C1000 C1001 558B S558-5999-U1 F ky U10 ADP3205 PMH4 C949

    PMH4

    Abstract: ADP3205 S558-599 t9 547B34 qm77 ky U10 357n c840 TP231005 ibm apollo
    Text: CR-1 : @DESIGN.J3E SCH_1 :PAGE1 A B C D E F G H J K L M N DATE 9 YUKON/KODIAK VER SE PLANAR 10/20/03 EC NO. P PART Q NO. VER.SE 9 DEVELOPMENT NO. Q/M 1 6 5 4 3 2 1 78 10/20/2003 8 7 / 8 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. 17. 18. 19. 20.


    Original     		PDF AD1981B VINT16 C1000 C1001 PMH4 ADP3205 S558-599 t9 547B34 qm77 ky U10 357n c840 TP231005 ibm apollo

    BI 335A

    Abstract: PC8394T PC8394 EZJ1V270GA IBM 88sa8040 88sa8040 adp3205 NLFC322522T-091M-GPF SI4435ADY KT 117B
    Text: A B C D E F G H J K L M N DATE DEV JUNEAU-5 PLANAR SIT 9 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. 17. 18. 19. 20. 21. 22. 23. 24. 25. 26. 27. 28. 29. 30. 31. 32. 33. 34. 35. 36. 37. 38. 39. 40. 41. 42. 43. 44. 8 7 6 5 4 3 2 1 TITLE PAGE 45. EC HISTORY


    Original     		PDF OCT/25/04 VCC05 1/16W R1002 R1003 LMV431 R1004 BI 335A PC8394T PC8394 EZJ1V270GA IBM 88sa8040 88sa8040 adp3205 NLFC322522T-091M-GPF SI4435ADY KT 117B

    2SK3567 equivalent

    Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
    Text: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2


    Original     		PDF BCE0017F E-28831 BCE0017G 2SK3567 equivalent 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603

    tpc8118

    Abstract: SVI 2004 A toshiba f5d tpc8026 tpc8109 oks2c toshiba f5b TPC8028 MARKING TPC8107 SOP8 MOSFET MARKING STP
    Text: Power MOSFETs 低耐圧低Ronシリーズ 2007年 2月 Copyright 2007, Toshiba Corporation. 低Ron 低耐圧U-MOSの技術トレンド 30 2 Ron*A (mOhm*mm ) 25 20 15 10 Pch Nch 5 Pch IV Nch III Pch V Nch IV Pch VI Nch V or VI 2007年 2月 2 リチウムイオン電池保護回路用MOSFETトレンドマップ


    Original     		PDF TPCM8001-H TPCM8003-H TPCM8002-H 2Q/2007 TPCM8102 1Q/2007 tpc8118 SVI 2004 A toshiba f5d tpc8026 tpc8109 oks2c toshiba f5b TPC8028 MARKING TPC8107 SOP8 MOSFET MARKING STP

    ESM 740

    Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
    Text: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.


    Original     		PDF SCE0003A ESM 740 transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126

    2SK3878 equivalent

    Abstract: 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718
    Text: [ 2 ] Selection Guide [ 2 ] Selection Guide [ 2 ] Selection Guide Power MOSFET Product Line-up ID = 0.5~20 A 1. VDSS (V) 12 16 20 30 40 50 60 100 150 180 ◊2SK2963 (0.7) ▲2SK2962 (0.7) ◊2SJ508 (1.9) ▲2SJ509 (1.9) ▲2SK3670 (1.7) ♦2SJ313 (5.0) ▼2SJ338 (5.0)


    Original     		PDF 2SK2963 2SK2962 2SJ508 2SJ509 2SK3670 2SJ313 2SJ338 2SK2013 2SK2162 2SJ360 2SK3878 equivalent 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718

    2SK4207

    Abstract: to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03
    Text: 製品カタログ 2009-9 東芝半導体 製品カタログ MOSFET SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3


    Original     		PDF BCJ0082B BCJ0082A 2SK4207 to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original     		PDF AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696