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Catalog Datasheet	MFG & Type	Document Tags	PDF
1h44s Abstract: Toshiba 1J 9-A vdr 1016 Text: 9097250 TOSHIBA DISCRETE/OPTO 0 ~T-3lS-/3 39C 02381 SSR (NON-ZERO-CROSS TYPE) TOSHIBA iDISCRETE/OPTO} 600V TSZ1J44S 3e] TDT72SD □0D53Û1 1 \|~~ Unit 1A MAXIMUM RATINGS C H A R A C TE R ISTIC T SZ 1D 44S Repetitive Peak T SZ 1G 44S Off-state Voltage T SZ 1H 44S	OCR Scan	TSZ1J44S TDT72SD 100Vrjrns 1h44s Toshiba 1J 9-A vdr 1016	PDF
2SC2483 Abstract: 2SA1195 Text: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA Sh ¿6C <DIS CR ET E/ OP T O 2SC2483 D E ^ TQT7ESD 0D07S41 □ 07 5^ L D yr. S IL IC O N NPN E P IT A X IA L TYPE PCT PROCESS) Unit in mm HIGH VOLTAGE GENERAL AMPLIFIER APPLICATIONS. 9.9MAX. . gfg.gfeqg COLOR TV CLASS B SOUND OUTPUT APPLICATIONS.	OCR Scan	0DG7S41 2SC2483 2SA1195 2SC2483	PDF
2SC2483 Abstract: 2SA1195 Scans-00125934 Text: TOSHIBA {DISCRETE/OPTO} 909 7250 T OSH IB A Sh ¿6C <D I S C R E T E / O P T O 2SC2483 D E ^ TQT7ESD 0D07S41 □ D yr. 07 5 ^ L SILICON NPN EPITAXIAL TYPE PCT PROCESS) HIGH VOLTAGE GENERAL AMPLIFIER APPLICATIONS. 9.9MAX. . gf g. g fe qg Unit in mm COLOR TV CLASS B SOUND OUTPUT APPLICATIONS.	OCR Scan	0DG7S41 2SC2483 2SA1195 2SC2483 2SA1195 Scans-00125934	PDF
Untitled Abstract: No abstract text available Text: TIM1414-10L FEATURES : • LOW INTERMODULATION DISTORTION ■ HIGH GAIN IM 3 = - 4 5 dB c at Po = 29.0 dBm , G1dB = 5.0 d B at 14.0 GHz to 14.5 GHz S ingle Carrier Level ■ ■ BROAD BAND INTERNALLY MATCHED HIGH POWER ■ HERMETICALLY SEALED PACKAGE P1dB = 40.5 dBm at 14.0 GHz to 14.5 GHz	OCR Scan	TIM1414-10L TCH7550 00P3034	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA MICROWAVE POWER GaAs FET J S 8 8 5 6 -A S Power GaAs FETs Chip Form Features • High power - P 1dB = 3 3 .5 dBm at f = 14.5 G H z • High gain - G idB = 6 .5 dB at f = 14.5 G H z • Suitable for Ku-Band amplifier • Ion implantation RF Performance Specifications (Ta = 25° C)	OCR Scan	JS8856-AS MW10140196 JS8856-AS	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA MICROWAVE POWER GaAs FET TIM5964-4 Internally Matched Power GaAs FETs C-Band Features • High power - PidB = 36.0 dBm at 5.9 GHz to 6.4 GHz • High gain - G-i ^ b = 8.5 dB at 5.9 GHz to 6.4 GHz • Broad band internally matched • Hermetically sealed package	OCR Scan	TIM5964-4 MW50690196 TDT72SD 00224flb TIM5964-4 Q02EMfl7	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA MICROWAVE POWER GaAs FET TIM 7785-7L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -43 dBc at Po = 28.5 dBm, - Single carrier level • H i g h power - P-\|dB = 38.5 dBm at 7.7 G H z to 8.5 GHz	OCR Scan	7785-7L 785-7L TIM7785-7 MW51060196 22bfic	PDF
2SC2650 Abstract: QD07S go z60 Text: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA "Sh DISCRETE/OPTO 2SC2650 DE \| t d eJ7SS0 QD07SÖ1 56C 07581 DT'-JJV? SILICON NPN TRIPLE DIFFUSED TYPE 34.3M AX. 5.3MAX 31 JO SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATIONS.	OCR Scan	QD07SÃ 2SC2650 2SC2650 QD07S go z60	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA { D I S C R E T E / OPTO} 9097250 TO S H IB A T=j D IS C R E T E /O P T O 99D DE \| ^ 7 5 5 0 17352 0D173SS D T -4 I-5 3 TPS703A SILICON PIN PHOTO DIODE Unit in nrn 7.0± a z 1 High Speed Switching :tr,t£=100ns(Typ.) High Sensitivity :Isc=0-9M(Typ.)	OCR Scan	0D173SS TPS703A 100ns 800nm 150ns TDT72SD 0D173S3	PDF
329J Abstract: 1336J TL 494 CL TCD5241BD TC6132AF sp-200 TCD5241 TL+494+CL Text: TC6132AF GENERAL The CMOS LSI of TC6132AF was developed to drive the CCD area image sensor TCD5241BD, TCD5251BD, TCD5240D and TCD5250D. The TC6132AF can be combined with a vertical clock driver and synchronous signal generation ICs to constitute the CCD area image sensor driving circuit.	OCR Scan	TC6132AF TC6132AF TCD5241BD, TCD5251BD, TCD5240D TCD5250D. 329J 1336J TL 494 CL TCD5241BD sp-200 TCD5241 TL+494+CL	PDF