TC59WM815BFT
Abstract: TC59WM803BFT TC59WM807BFT Selex
Text: TC59WM815/07/03BFT-70,-75,-80 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDS x 4 BANKS × 16-BITS SYNCHRONOUS DYNAMIC RAM 8,388,608-WORDS × 4 BANKS × 8-BITS SYNCHRONOUS DYNAMIC RAM 16,777,216-WORDS × 4 BANKS × 4-BITS SYNCHRONOUS DYNAMIC RAM
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TC59WM815/07/03BFT-70
304-WORDS
16-BITS
608-WORDS
216-WORDS
TC59WM815BFT
TC59WM807BFT
TC59WM803BFT
Selex
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ddr ram
Abstract: ddr ram memory ic 3v led TC59WM803BFT TC59WM807BFT TC59WM815BFT
Text: 東 芝 半 導 体 情 報 誌 アイ 9 2000・9月号 発 行 ／（ 株 ）東 芝セミコンダクター社 電子デバイス営業事業部 営業企画部 T E L . 0 3-3 4 5 7-3 4 0 5 F A X . 0 3-5 4 4 4-9 4 3 1 C O N T E Vol.98 N T 韓国・東部電子へ
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TB62725P/F/FN
DRAM045-890-2711
TC59WM803BFT-70/75/80
286Mbps/266Mbps/250Mbps
143MHz
133MHz
125MHz)
TC59WM807BFT-70/75/80
jp/noseek/jp/td/04frame
ddr ram
ddr ram memory ic
3v led
TC59WM803BFT
TC59WM807BFT
TC59WM815BFT
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TC59SM716FT-75
Abstract: TC59SM708FT-75 TC59RM716GB THMY6416H1EG-75 TSOP 48 Package nand memory toshiba TH50VSF3681AASB TSOPII-54 16MX72 thmr1e16e THMY6432G1EG-75
Text: TOSHIBA AMERICA ELECTRONIC COMPONENTS DRAM COMPONENT PRODUCTS SELECTION GUIDE January 2002 Subject to change without notice ORG TYPE PKG SPEED (ns) BANKS ROW/ COL STATUS (2) Des Rec(3) FEATURES DATASHEET TC59RM718MB/RB(1) 8Mx18 Rambus CSP-62 800/711/600 MHz
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TC59RM718MB/RB
8Mx18
CSP-62
PC800/700/600
TC59RM716MB/RB
8Mx16
TC59RM716GB
TC59SM716FT-75
TC59SM708FT-75
TC59RM716GB
THMY6416H1EG-75
TSOP 48 Package nand memory toshiba
TH50VSF3681AASB
TSOPII-54
16MX72
thmr1e16e
THMY6432G1EG-75
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OCXX
Abstract: relay UDM 112 sdr sdram reference soc toshiba 64MX4 TC59RM716 sdr sdram RAS 2415 signal path designer "routing tables"
Text: A System Designer’s Guide to High-Performance Memories System Solutions from Toshiba America Electronic Components, Inc. Members of Technical Staff MTS - Field Jim Cooke, Director Michael Jahed, Manager Behzad Sanii, Director Randall Lopez, Manager Farhad Mafie, Vice President
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7/03B-70
143MHz)
TC59LM814/06C-50
200MHz)
TC59LM814/06C-50
143MHz
TC59RM716
400MHz)
OCXX
relay UDM 112
sdr sdram reference
soc toshiba
64MX4
sdr sdram
RAS 2415
signal path designer
"routing tables"
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Hynix Cross Reference
Abstract: dram cross reference WINBOND hyundai hy57v161610d WINBOND cross reference 64Mb samsung SDRAM TC59SM716FT/AFT 256mb K4H560838B hy57v
Text: DRAM Cross Reference DDR SDRAM Winbond P/N W946432AD W942504AH W942508AH W942516AH Density 64Mb 256Mb 256Mb 256Mb Org. 2Mx32 64Mx4 32Mx8 16Mx16 Samsung K4D62323HA K4H560438B K4H560838B K4H561638B Hynix Hyundai HY57V643220CT HY5DU56422T HY5DU56822T HY5DU561622T
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W946432AD
W942504AH
W942508AH
W942516AH
256Mb
2Mx32
64Mx4
32Mx8
Hynix Cross Reference
dram cross reference
WINBOND
hyundai hy57v161610d
WINBOND cross reference
64Mb samsung SDRAM
TC59SM716FT/AFT
256mb
K4H560838B
hy57v
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DD 127 D
Abstract: No abstract text available
Text: TOSHIBA THMD12N11 B70#75#80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 64-BIT DDR SYNCHRONOUS DRAM MODULE DESCRIPTION The THMD12N11B is a 16,777,216-word by 64-bit Double Data Rate synchronous dynamic RAM module consisting of 4 TC59WM815BFT DRAMs on a printed circuit board.
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THMD12N11
216-WORD
64-BIT
THMD12N11B
TC59WM815BFT
64-bit
DD 127 D
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Untitled
Abstract: No abstract text available
Text: TOSHIBA THLD25N01 B70#75#80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 64-BIT DDR SYNCHRONOUS DRAM MODULE DESCRIPTION The THLD25N01B is a 33,554,432-word by 64-bit Double Data Rate synchronous dynamic RAM module consisting of 8 TC59WM815BFT DRAMs on a printed circuit board.
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THLD25N01
432-WORD
64-BIT
THLD25N01B
TC59WM815BFT
64-bit
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AN 7580
Abstract: TC59WM815BFT
Text: TOSHIBA THMD12E11 B70#75#80 TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 16,777,216-WORD BY 72-BIT DDR SYNCHRONOUS DRAM MODULE DESCRIPTION The THMD12E11B is a 16,777,216-word by 72-bit Double Data Rate synchronous dynamic RAM module consisting of 5 TC59WM815BFT DRAMs on a printed circuit board.
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THMD12E11
216-WORD
72-BIT
THMD12E11B
TC59WM815BFT
72-bit
AN 7580
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TC59WM815BFT
Abstract: No abstract text available
Text: TOSHIBA THMD12N11 B70#75#80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 64-BIT DDR SYNCHRONOUS DRAM MODULE DESCRIPTION The THMD12N11B is a 16,777,216-word by 64-bit Double Data Rate synchronous dynamic RAM module consisting of 4 TC59WM815BFT DRAMs on a printed circuit board.
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THMD12N11
216-WORD
64-BIT
THMD12N11B
TC59WM815BFT
64-bit
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bd4r
Abstract: TC59WM815BFT DM160
Text: THLD12N11B70f75f80 TOSHIBA TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 64-BIT DDR SYNCHRONOUS DRAM MODULE DESCRIPTION The THLD12N11B is a 16,777,216-word by 64-bit Double Data Rate synchronous dynamic RAM module consisting of 4 TC59WM815BFT DRAMs on a printed circuit board.
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THLD12N11
216-WORD
64-BIT
THLD12N11B
TC59WM815BFT
64-bit
bd4r
DM160
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Untitled
Abstract: No abstract text available
Text: TO SH IBA THLD12N11B70f75f80 TENTATIVE TO SHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 64-BIT DDR SYNCHRONOUS DRAM MODULE DESCRIPTION The THLD12N11B is a 16,777,216-word by 64-bit Double Data Rate synchronous dynamic RAM module consisting of 4 TC59WM815BFT DRAMs on a printed circuit board.
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THLD12N11B70f75f80
216-WORD
64-BIT
THLD12N11B
TC59WM815BFT
64-bit
DQO-63
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CK01, H 135
Abstract: No abstract text available
Text: TOSHIBA THLD12N11B70f75f80 TENTATIVE TO SHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 64-BIT DDR SYNCHRONOUS DRAM MODULE DESCRIPTION The THLD12N11B is a 16,777,216-word by 64-bit Double Data Rate synchronous dynamic RAM module consisting of 4 TC59WM815BFT DRAMs on a printed circuit board.
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OCR Scan
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PDF
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THLD12N11B70f75f80
216-WORD
64-BIT
THLD12N11B
TC59WM815BFT
64-bit
THLD12N11B)
CK01, H 135
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Untitled
Abstract: No abstract text available
Text: TOSHIBA THMD12E11 B70#75#80 TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 16,777,216-WORD BY 72-BIT DDR SYNCHRONOUS DRAM MODULE DESCRIPTION The THMD12E11B is a 16,777,216-word by 72-bit Double Data Rate synchronous dynamic RAM module consisting of 5 TC59WM815BFT DRAMs on a printed circuit board.
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OCR Scan
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PDF
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THMD12E11
216-WORD
72-BIT
THMD12E11B
TC59WM815BFT
72-bit
THMD12E11B)
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Untitled
Abstract: No abstract text available
Text: TO SH IBA THMD12N11 B70f75f80 TENTATIVE TO SHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 64-BIT DDR SYNCHRONOUS DRAM MODULE DESCRIPTION The THMD12N11B is a 16,777,216-word by 64-bit Double Data Rate synchronous dynamic RAM module consisting of 4 TC59WM815BFT DRAMs on a printed circuit board.
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OCR Scan
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PDF
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THMD12N11
B70f75f80
216-WORD
64-BIT
THMD12N11B
TC59WM815BFT
64-bit
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Untitled
Abstract: No abstract text available
Text: TOSHIBA THLD25N01 B70f75f80 TO SHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 33,554,432-WORD BY 64-BIT DDR SYNCHRONOUS DRAM MODULE DESCRIPTION The THLD25N01B is a 33,554,432-word by 64-bit Double Data Rate synchronous dynamic RAM module consisting of 8 TC59WM815BFT DRAMs on a printed circuit board.
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OCR Scan
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PDF
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THLD25N01
B70f75f80
THLD25N01B
432-word
64-bit
TC59WM815BFT
64-bit
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Untitled
Abstract: No abstract text available
Text: TOSHIBA THLD25N01 B70f75f80 TO SHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 33,554,432-WORD BY 64-BIT DDR SYNCHRONOUS DRAM MODULE DESCRIPTION The THLD25N01B is a 33,554,432-word by 64-bit Double Data Rate synchronous dynamic RAM module consisting of 8 TC59WM815BFT DRAMs on a printed circuit board.
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OCR Scan
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PDF
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THLD25N01
B70f75f80
THLD25N01B
432-word
64-bit
TC59WM815BFT
64-bit
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TC59WM815BFT
Abstract: 674h AN 7580
Text: TOSHIBA THLD25N01 B70#75#80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 64-BIT DDR SYNCHRONOUS DRAM MODULE DESCRIPTION The THLD25N01B is a 33,554,432-word by 64-bit Double Data Rate synchronous dynamic RAM module consisting of 8 TC59WM815BFT DRAMs on a printed circuit board.
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OCR Scan
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PDF
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THLD25N01
432-WORD
64-BIT
THLD25N01B
TC59WM815BFT
64-bit
674h
AN 7580
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E3235
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE TC59WM815/07/03BFT-70,-75,-80 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDSX4BANKSX16-BITS SYNCHRONOUS DYNAMIC RAM 8,388,608-WORDSX4BANKSX8-BITS SYNCHRONOUS DYNAMIC RAM 16,777,216-WORDSX4BANKSX4-BITS SYNCHRONOUS DYNAMIC RAM
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TC59WM815/07/03BFT-70
304-WORDSX4BANKSX16-BITS
608-WORDSX4BANKSX8-BITS
216-WORDSX4BANKSX4-BITS
TC59WM815BFT
TC59WM807BFT
TC59WM803BFT
E3235
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