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Toshiba Corporation TC551664BJ-12
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Bristol Electronics	TC551664BJ-12		5,964			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Toshiba America Electronic Components TC551664BFT-12
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Bristol Electronics	TC551664BFT-12		240			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Component Electronics, Inc	TC551664BFT-12		770			1 $9.23 10 $9.23 100 $6.92 1000 $6 10000 $6	Buy Now
Toshiba America Electronic Components TC551664BJ-15
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Bristol Electronics	TC551664BJ-15		197		1	1 $8.064 10 $5.2416 100 $3.4941 1000 $3.3062 10000 $3.3062	Buy Now
Quest Components	TC551664BJ-15		2,392			1 $12.4673 10 $12.4673 100 $12.4673 1000 $8.3115 10000 $8.3115	Buy Now
	TC551664BJ-15		48			1 $10.8 10 $5.4 100 $5.04 1000 $5.04 10000 $5.04	Buy Now
	TC551664BJ-15		2			1 $5.43 10 $3.62 100 $3.62 1000 $3.62 10000 $3.62	Buy Now
ComSIT USA	TC551664BJ-15		382			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Component Electronics, Inc	TC551664BJ-15		48			1 $9.23 10 $9.23 100 $6.92 1000 $6 10000 $6	Buy Now
Toshiba America Electronic Components TC551664J-15
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Bristol Electronics	TC551664J-15		162		1	1 $10.864 10 $5.432 100 $4.7074 1000 $4.4542 10000 $4.4542	Buy Now
Quest Components	TC551664J-15		1,054			1 $16.875 10 $16.875 100 $16.875 1000 $11.25 10000 $11.25	Buy Now
	TC551664J-15		76			1 $14.55 10 $14.55 100 $6.305 1000 $6.305 10000 $6.305	Buy Now
	TC551664J-15		53			1 $20.0925 10 $17.86 100 $16.5205 1000 $16.5205 10000 $16.5205	Buy Now
	TC551664J-15		37			1 $15 10 $11.25 100 $9.75 1000 $9.75 10000 $9.75	Buy Now
	TC551664J-15		3			1 $16.875 10 $15.75 100 $15.75 1000 $15.75 10000 $15.75	Buy Now
ComSIT USA	TC551664J-15		6			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Toshiba America Electronic Components TC551664J-20
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Bristol Electronics	TC551664J-20		132			1 - 10 - 100 - 1000 - 10000 -	Get Quote

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TC551664 Datasheets (31)

Part	Manufacturer	Description	Datasheet Type	PDF
TC551664	Toshiba	65,536-Word BY 16-BIT CMOS STATIC RAM	Scan	PDF
TC551664AJ	Toshiba	65,536-Word BY 16-BIT CMOS STATIC RAM	Scan	PDF
TC551664AJ-15	Toshiba	65,536-Word BY 16-BIT CMOS STATIC RAM	Scan	PDF
TC551664AJ-20	Toshiba	65,536-Word BY 16-BIT CMOS STATIC RAM	Scan	PDF
TC551664BFT-10	Toshiba	65,536 Word by 16 Bit CMOS Static RAM	Scan	PDF
TC551664BFT-10	Toshiba		Scan	PDF
TC551664BFT-12	Toshiba	65,536 Word by 16 Bit CMOS Static RAM	Scan	PDF
TC551664BFT-12	Toshiba	SRAM Chip, Asynchronous, 1Mbit, SDR, 5V Supply, Commercial, TSOP II, 44-Pin	Scan	PDF
TC551664BFT-12	Toshiba	65,536-Word BY 16-BIT CMOS STATIC RAM	Scan	PDF
TC551664BFT-12(EL)	Toshiba	SRAM Chip, Asynchronous, 1Mbit, SDR, 5V Supply, Commercial, TSOP II, 44-Pin, Tape And Reel	Scan	PDF
TC551664BFT-15	Toshiba	65,536 Word by 16 Bit CMOS Static RAM	Scan	PDF
TC551664BFT-15	Toshiba	SRAM Chip, Asynchronous, 1Mbit, SDR, 5V Supply, Commercial, TSOP II, 44-Pin	Scan	PDF
TC551664BFT-15	Toshiba	65,536-Word BY 16-BIT CMOS STATIC RAM	Scan	PDF
TC551664BFTI-12	Toshiba	65,536 Word by 16 Bit CMOS Static RAM	Scan	PDF

TC551664BFTI-12	Toshiba	SRAM Chip, Asynchronous, 1Mbit, SDR, 5V Supply, Industrial, TSOP II, 44-Pin	Scan	PDF
TC551664BFTI-15	Toshiba	65,536 Word by 16 Bit CMOS Static RAM	Scan	PDF
TC551664BFTI-15	Toshiba	SRAM Chip, Asynchronous, 1Mbit, SDR, 5V Supply, Industrial, TSOP II, 44-Pin	Scan	PDF
TC551664BJ	Toshiba	65,536-Word BY 16-BIT CMOS STATIC RAM	Scan	PDF
TC551664BJ-10	Toshiba	65,536 Word by 16 Bit CMOS Static RAM	Scan	PDF
TC551664BJ-10	Toshiba		Scan	PDF

TC551664 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: TC551664AJ-20 1/2 IL08 * C-MOS 1M(65,536X16)-BIT STATIC RAM -TOP VIEW- A4 1 44 A5 A3 2 43 A6 A2 3 42 A7 A1 4 41 OE A0 5 4 3 2 1 44 40 UB CE 6 43 42 39 LB I/O1 7 27 38 I/O16 I/O2 8 37 I/O15 I/O3 9 36 I/O14 I/O4 10 35 I/O13 11 VDD(+5V) 12 GND I/O5 13	Original	PDF	TC551664AJ-20 536X16 I/O16 I/O14 I/O15 I/O13 I/O10 I/O11
TC551664AJ-15 Abstract: TC551664AJ Text: TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC551664AJ-15/20 SILICON GATE CMOS 65,536 WORD x 16 BIT CMOS STATIC RAM Description The TC551664AJ is a 1,048,576 bits high speed static random access memory organized as 65,536 words by 16 bits using CMOS technology, and operated from a single 5-volt supply. Toshiba’s CMOS technology and advanced circuit form provide high	Original	PDF	TC551664AJ-15/20 TC551664AJ SR01030895 SOJ44-P-400) TC551664AJ-15
TC554161FTL-85L Abstract: TC55257DPL-70L TC55257DFL-70L TC55257DPL-85L TC55257DFI-85L TC551001CF tc55257dfl-85l TC58F400FTI-90 Text: Index n INDEX TC551001CF-55 TC551001CF-55L TC551001CF-70 TC551001CF-70L TC551001CF-85 TC551001CF-85L TC551001CFI-70 TC551001CFI-70L TC551001CFI-85 TC551001CFI-85L TC551001CFT-55 TC551001CFT-55L TC551001CFT-70 TC551001CFT-70L TC551001CFT-85 TC551001CFT-85L	Original	PDF	TC551001CSRI-85L TC551001CST-55 TC551001CST-55L TC551001CST-70 TC551001CST-70L TC551001CST-85 TC551001CST-85L TC551001CSTI-70 TC551001CSTI-70L TC551001CSTI-85 TC554161FTL-85L TC55257DPL-70L TC55257DFL-70L TC55257DPL-85L TC55257DFI-85L TC551001CF tc55257dfl-85l TC58F400FTI-90
Untitled Abstract: No abstract text available Text: TO SH IBA TC551664BJ/BFT-12,-15 TOSHIBA M OS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC551664BJ/BFT is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it	OCR Scan	PDF	TC551664BJ/BFT-12 536-WORD 16-BIT TC551664BJ/BFT 576-bit SOJ44-P-400-1 44-P-400-0
TC551664J Abstract: No abstract text available Text: TOSHIBA TC551664J-15/20/25 SILICON GATE CMOS 65,536 WORD x 16 BIT CMOS STATIC RAM Description The TC551664J is a 1.048,576 bit high speed CMOS static random access memory organized as 65,536 words by 16 bits and operated from a single 5V supply. Toshiba's advanced CMOS technology and circuit design enable high speed operation.	OCR Scan	PDF	TC551664J-15/20/25 TC551664J 400mil DD2b417 B-127
tc551664aj-12 Abstract: SOJ44-P-400-1 TC551664AJ-15 TC551664BJ Text: TOSHIBA TC551664BJ/BFT-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC551664BJ/BFT is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it	OCR Scan	PDF	TC551664BJ/BFT-12 536-WORD 16-BIT TC551664BJ/BFT 576-bit SOJ44-P-4QO-1 44-P-400-0 tc551664aj-12 SOJ44-P-400-1 TC551664AJ-15 TC551664BJ
TC551664J-15 Abstract: cs40 Text: TOSHIBA TC551664J-15/20/25 SILICON GATE CMOS 65,536 WORD x 16 BIT CMOS STATIC RAM Description The T C 5 M 6 6 4 J is a 1.048.576 bit high speed C M O S static random acce ss m em ory organized as 6 5 ,5 3 6 w o rd s by 16 bits and operated trorn a single 5V supply. Toshiba's advanced C M O S tech nolog y and circuit design enable high speed operation.	OCR Scan	PDF	TC551664J-15/20/25 1664J B-127 TC551664J-15 cs40
SOJ44-P-400-1 Abstract: TC551664BJ Text: TOSHIBA TC551664BJ/BFT-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC551664BJ/BFT is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it	OCR Scan	PDF	TC551664BJ/BFT-10 536-WORD 16-BIT TC551664BJ/BFT 576-bit SOJ44-P-4QO-1 44-P-400-0 W0-13tM SOJ44-P-400-1 TC551664BJ
Untitled Abstract: No abstract text available Text: TOSHIBA TC551664AJ-15,-20 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC551664AJ is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it	OCR Scan	PDF	TC551664AJ-15 536-WORD 16-BIT TC551664AJ 576-bit SOJ44-P-400-1
Untitled Abstract: No abstract text available Text: T O SH IB A TC551664BJ/BFT-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC551664BJ/BFT is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it	OCR Scan	PDF	TC551664BJ/BFT-12 536-WORD 16-BIT TC551664BJ/BFT 576-bit SOJ44-P-400-1 44-P-400-0
Untitled Abstract: No abstract text available Text: INTEGRATED TOSHIBA TOSHIBA M O S DIGITAL INTEGRATED CIRCUIT CIRCUIT TECHNICAL TC551664 BJ/BFT -12 TC551664 BJ/BFT-15 DATA SILICON GATE CM O S TENTATIVE 65,536-WORD BY 16-BIT CM O S STATIC RAM DESCRIPTION The TC551664BJ/BFT is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536	OCR Scan	PDF	TC551664 BJ/BFT-15 536-WORD 16-BIT TC551664BJ/BFT 576-bit SOJ44-P-400-1
Untitled Abstract: No abstract text available Text: T O S H IB A TENTATIVE TC551664BJI/BFT1-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC551664BJI/BFTI is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high	OCR Scan	PDF	TC551664BJI/BFT1-12 536-WORD 16-BIT TC551664BJI/BFTI 576-bit TC551664BJ1/BFTI-12 SOJ44-P-400-1 TC551664BJI/BFTI-12 TSOPII44-P-400
SOJ44-P-400-1 Abstract: TC551664AJ TC551664AJ-15 TC551664AJ-20 00151341 Text: TO SHIBA TC551664AJ-15,-20 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC551664AJ is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it	OCR Scan	PDF	TC551664AJ-15 536-WORD 16-BIT TC551664AJ 576-bit SOJ44-P-4QO-1 SOJ44-P-400-1 TC551664AJ-20 00151341
Untitled Abstract: No abstract text available Text: TOSHIBA TC551664AJ-15/20 SILICON GATE CMOS Description The TC551664AJ is a 1,048,576 bits high speed static random access memory organized as 65,536 words by 16 bits using CMOS technology, and operated from a single 5-volt supply. Toshiba’s CMOS technology and advanced circuit form provide	OCR Scan	PDF	TC551664AJ-15/20 TC551664AJ 44-pin

tc551664j Abstract: TC551664J-15 Text: SILICON GATE CMOS DIGITAL INTEGRATED CIRCUIT TC551664J-15.-20.-25 65,536 W O RD x 16 BIT CMOS STATIC RAM DESCRIPTION The TC551664J is a 1,048,576 bits high speed static random access memory organized as 65,536 words by 16 bits using CMOS technology, and operated from a single 5-volt supply. Toshiba's CMOS	OCR Scan	PDF	TC551664J-15 TC551664J TC551664551664J-15
TC551664AJ-12 Abstract: SOJ44-P-400-1 TC551664AJ-15 TC551664BJ Text: TO SHIBA TC551664BJ/BFT-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC551664BJ/BFT is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it	OCR Scan	PDF	TC551664BJ/BFT-12 536-WORD 16-BIT TC551664BJ/BFT 576-bit 44-P-400-0 TC551664AJ-12 SOJ44-P-400-1 TC551664AJ-15 TC551664BJ
Untitled Abstract: No abstract text available Text: TO SHIBA TC551664AJ-15,-20 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC551664AJ is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it	OCR Scan	PDF	TC551664AJ-15 536-WORD 16-BIT TC551664AJ 576-bit SOJ44-P-400-1
Untitled Abstract: No abstract text available Text: 'SC INTEGRATED CIRCUIT T O S H IB A T O S H IB A M O S D IGITAL IN T E G R A T E D CIRCUIT TC 551664J - 15, TC551664J - 20. T C 5 5 1 6 6 4 J - 2 5 TECHNICAL D A T A SILICON G A T E C M O S PRELIM INARY 65,536 W O R D x 16 BIT C M O S STATIC RAM DESCRIPTION	OCR Scan	PDF	551664J TC551664J TC55166AJ SOJ44â
Untitled Abstract: No abstract text available Text: TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC551664AJ-15/20 SILICON GATE CMOS 65,536 WORD x 16 BIT CMOS STATIC RAM Description The TC551664AJ is a 1,048,576 bits high speed static random access memory organized as 65,536 words by 16 bits using CMOS technology, and operated from a single 5-volt supply. Toshiba’s CMOS technology and advanced circuit form provide high	OCR Scan	PDF	TC551664AJ-15/20 TC551664AJ SR01030895 GD26D7S SOJ44-P-400) t1724fl
Untitled Abstract: No abstract text available Text: T O S H IB A TC551664BJI/B FTl-12,-15 T O S H IB A M O S D IG ITAL IN TEG RATED CIRCUIT T E N T A T IV E SILICON G ATE C M O S 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC551664BJI/BFTI is a 1,048,576-bit high-speed static random access memory SRAM organized as	OCR Scan	PDF	TC551664BJI/BFT1-12 536-WORD 16-BIT TC551664BJI/BFTI 576-bit SC1J44-P-400-1 44-P-400-0
TC551664AJ-12 Abstract: No abstract text available Text: TC551664AJ-12 TOSHIBA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC551664AJ is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it	OCR Scan	PDF	TC551664AJ-12 536-WORD 16-BIT TC551664AJ 576-bit TC551e. SOJ44-P-400-1 TC551664AJ-12
BFT10A Abstract: No abstract text available Text: TOSHIBA TENTATIVE TC551664BJ/BFT-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC551664BJ/BFT is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it	OCR Scan	PDF	TC551664BJ/BFT-10 536-WORD 16-BIT TC551664BJ/BFT 576-bit SOJ44-P-400-1 44-P-400-0 BFT10A
TC551664AJ-15 Abstract: SOJ44-P-400-1 TC551664AJ-12 TC551664BJ TC551664AJ Text: TOSHIBA TC551664BJ/BFT-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC551664BJ/BFT is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it	OCR Scan	PDF	TC551664BJ/BFT-12 536-WORD 16-BIT TC551664BJ/BFT 576-bit SOJ44-P-4QO-1 44-P-400-0 KH0-13tM TC551664AJ-15 SOJ44-P-400-1 TC551664AJ-12 TC551664BJ TC551664AJ
043Z Abstract: tc5516 Text: T O S H IB A T E N T A T IV E TC551664BJI/BFT1-12,-15 T O S H IB A M O S D IG IT A L IN T E G R A T E D C IR C U IT SILICO N G A TE C M O S 6 5 ,5 3 6 -W O R D BY 16-BIT CMO S STATIC RA M DESCRIPTION The TC551664BJT/BFTI is a 1,048,576-bit high-speed static random access memory SRAM organized as	OCR Scan	PDF	TC551664BJI/BFT1-12 536-WORD 16-BIT TC551664BJI/BFTI 576-bit SOJ44-P-4QO-1 44-P-400-0 043Z tc5516

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TC551664 Price and Stock

Toshiba Corporation TC551664BJ-12

Toshiba America Electronic Components TC551664BFT-12

Toshiba America Electronic Components TC551664BJ-15

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Toshiba America Electronic Components TC551664J-20

TC551664 Datasheets (31)

TC551664 Datasheets Context Search

Untitled

TC551664AJ-15

TC554161FTL-85L

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TC551664J

tc551664aj-12

TC551664J-15

SOJ44-P-400-1

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Untitled

SOJ44-P-400-1

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tc551664j

TC551664AJ-12

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TC551664AJ-12

BFT10A

TC551664AJ-15

043Z