Untitled
Abstract: No abstract text available
Text: PRELIMINARY M IC R O N 128K SRAM MODULE X M T4LS12832 32 SRAM M ODULE 128Kx 32 SRAM LOW VOLTAGE • H ig h sp eed : 20*, 25 an d 35n s • H ig h -d en sity 5 1 2 K B d esig n • H ig h -p e rfo rm a n ce, lo w -p o w er, C M O S d o u b le-m eta l p rocess
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T4LS12832
128Kx
64-Pin
MT4LS12832
i-1993,
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T4LS
Abstract: CE5 marking
Text: M I CR ON S E M I C O N D U C T O R INC b?E D • blllS^H GDO^bTH 230 HMRN PRELIMINARY M IC R O N 128K SRAM MODULE X T4LS12832 32 SRAM MODULE 128Kx 32 SRAM LOW VOLTAGE • • • • • • • • • • High speed: 20*, 25 and 35ns High-density 512KB design
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MT4LS12832
128Kx
512KB
64-Pin
T4LS
CE5 marking
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Untitled
Abstract: No abstract text available
Text: JUL 14 '993 PRELIMINARY T4LS12832 128K X 32 SRAM MODULE M IC R O N • SfcMcCONDOCIOR. MC SRAM MODULE 128K X 32 SRAM LOW VOLTAGE FEATURES • High speed: 20*, 25 and 35ns • High-density 512KB design • High-performance, low-power, CMOS double-metal process
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MT4LS12832
512KB
64-Pin
C1993.
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY R I E R O T4LS12832 128K X 32 SRAM MOD ULE N SRAM MODULE 128K X 32 SRAM LOW VOLTAGE FEATURES • High speed: 17, 20 and 25ns • High-density 512KB design • High-perform ance, low-power, CM OS double-m etal process • Single +3.3V +0.3V power supply
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MT4LS12832
512KB
64-Pin
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