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    TIP2955T

    Abstract: TIP3055T
    Text: DEVELOPMENT DATA T1P2955T This data sheet contains advance information and specifications are subject to change w ithout notice. _ SILICON EPITAXIAL-BASE POWER TRANSISTOR P-N-P transistor in a plastic envelope. W ith its n-p-n complement TIP3055T they are prim arily intended


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    PDF TIP2955T TIP3055T O-220. bbS3T31 TIP2955T