Untitled
Abstract: No abstract text available
Text: TT TOSHIBA -CDISCRETE/OPTO} 9097250 TOSHIBA DISCRETE/OPTO T0T7250 0017173 3 |~~ 99D 17173 DT-4l-Ä| TLR262 GaP RED LIGHT EMISSION FEATURES: . All Plastic Mold Type : Colorless ’ Clear Lens . Wide Radiation Pattern-Suitable For Backlighting Half Angle=±45 deg. (Typ.) (limits for 50% of Iv )
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T0T7250
TLR262
lF-10~
lF-20mA
10raA
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T0T7250
Abstract: FS1N
Text: TCD6162AU GEN ERAL The TC6162AU is a C M O S LSI chip for generating NTSC television synchronization signals and operating a 400,000- pixel FITCCD area image sensor. This chip covers the electronic shutter m ode of 1 /60 to 1 / 2000 seconds. It has a vertical reset pin that enables
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TCD6162AU
TC6162AU
TCH72S0
Q051S44
QFP44-P-1010A
T0T7250
FS1N
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T0T7250
Abstract: hoya Filter ND 0.3
Text: TCD5311BD GENERAL TCD5311BD is an interline CCD area image sensor developed for a PAL/SECAM system Color television camera. This device has signal pixels of 681 horizontal x 582 (vertical), and its image size agrees with 1/2 inch type optical system. This device offers high sensitivity and high resolution,
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TCD5311BD
TCD5311BD
TCH725Q
T0T7250
hoya Filter ND 0.3
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 10^7250 0G23314 T O SH IB A FIELD EFFECT T RA N SIST O R 2SK1542 TbT SILICO N N C H A N N E L M O S TYPE L2-;r-M O SIV 2 S K 1 542 INDUSTRIAL APPLICATIONS H IGH SPEED SW IT C H IN G APPLICATION S. RELA Y DRIVE, M O T O R D RIV E A N D D C -D C C O N V ER TER APPLICATION S.
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0G23314
2SK1542
15mii
100//A
O-220SM
Q023b44
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-16L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -42 dBc at Po = 31.5 dBm, - Single carrier level • High power * P-idB = 42 dBm at 7.1 GHz to 7.9 GHz
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TIM7179-16L
MW51030196
DD22SÃ
TIM7179-16L
T0T7250
00225A4
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TLP533
Abstract: No abstract text available
Text: TLP531,532 GaAs IRED S PHOTO-TRANSISTOR PROGRAMMABLE CONTROLLERS AC/DC-INPUT MODULE SOLID STATE RELAY The TOSHIBA TLP531 and TLP532 consist of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP package.
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TLP531
TLP532
2500Vrms
E67349
TLP533
TLP533
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Untitled
Abstract: No abstract text available
Text: TIM1414-10L FEATURES : • LOW INTERMODULATION DISTORTION ■ HIGH GAIN IM 3 = - 4 5 dB c at Po = 29.0 dBm , G1dB = 5.0 d B at 14.0 GHz to 14.5 GHz S ingle Carrier Level ■ ■ BROAD BAND INTERNALLY MATCHED HIGH POWER ■ HERMETICALLY SEALED PACKAGE P1dB = 40.5 dBm at 14.0 GHz to 14.5 GHz
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TIM1414-10L
TCH7550
00P3034
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET J S 8 8 5 6 -A S Power GaAs FETs Chip Form Features • High power - P 1dB = 3 3 .5 dBm at f = 14.5 G H z • High gain - G idB = 6 .5 dB at f = 14.5 G H z • Suitable for Ku-Band amplifier • Ion implantation RF Performance Specifications (Ta = 25° C)
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JS8856-AS
MW10140196
JS8856-AS
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2SC2105
Abstract: 5mmX15mm 10ID
Text: TOSHIBA {DISCRETE/OPTO} 9097250 T O SH IB A Tb D E J TOTVSSO 0D07Mfth 7 <D I S C R E T E / O P T O > SIL IC O N NPN E P IT A X IA L P L A N A R TYPE Unit in nan UHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES : . Output Power : P0=6W Min. (f=470MHz, VCc=12.6V, Pi=lW)
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0D07Mfth
470MHz,
470MHz
2SC2105
07V87
470MKz
5mmx15mm
2SC2105
10ID
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Untitled
Abstract: No abstract text available
Text: TOSHIBA LED Lamp TLRE157P InGaAlP Red Light Emission Panel Circuit Indicator 5 mm Diameter T1 -3/4 • InGaAlP Red LED • All Plastic Mold Type • Colorless Clear Lens • Low Drive Current, High Intensity Red Light Emission - Recommended Forward Current: (t= 1 —20 mA (DC)
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TLRE157P
DD22fin
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Untitled
Abstract: No abstract text available
Text: TOSHIBA Discrete Semiconductors 2SK2149 Unit in mm Silicon N Channel MOSType c - MOS IV High Speed, High Current Switching Applications. Chopper Regulator, DC-DC Converter and Motor Drive Applications. • • • • I5.9MAX. '•'3.210.2 w Low Drain-Source ON Resistance: (äs(ON)= 0-6i2 OVp.)
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2SK2149
DD217Q4
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MG15G4GL1
Abstract: toshiba mg15g4gl1 MG15G6EL1 MG15 npn DARLINGTON 15A 248A1 mg15g4
Text: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA "TD <DISCRETE/OPTO> V ' r - ‘2 > 3 - ‘3 £ ' 90D 16203 TOSHIBA GTR MODULE SEMICONDUCTOR ¿Tasiiiht DÊjH T O T T E S D O O l b H D E 3 J - MG15G4GL1 MG15G6EL1 TECHNICAL DATA SILIC O N NPN T R IP L E DIFFUSED TYPE
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MG15G4GL1
MG15G6EL1
MG15G4GL1
MG15G6EL1
110X7
2-48A1A
toshiba mg15g4gl1
MG15
npn DARLINGTON 15A
248A1
mg15g4
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