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Vishay Siliconix SIRA34DP-T1-GE3 MOSFET N-CH 30V 40A PPAK SO-8
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SIRA34DP Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SIRA34DP-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 40A 8SOIC		Original	PDF

SIRA34DP Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: SiRA34DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () Max. 30 0.0067 at VGS = 10 V 40 0.0098 at VGS = 4.5 V 40 Qg (Typ.) 8 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS • • • • 5.15 mm 1 S 2 S 3 • TrenchFET® Gen IV Power MOSFET	Original	PDF	SiRA34DP SiRA34DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: SiRA34DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () Max. 30 0.0067 at VGS = 10 V 40 0.0098 at VGS = 4.5 V 40 Qg (Typ.) 8 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS • • • • 5.15 mm 1 S 2 S 3 • TrenchFET® Gen IV Power MOSFET	Original	PDF	SiRA34DP SiRA34DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: V i s h ay I n t e r t e c h n o l o g y, I n c . POWER MOSFETs MOSFETs – Ultra-Low RDS on with Next Generation Technology TrenchFET Gen IV New Breakthrough Technology Lowers On-Resistance Down to Just 0.00135 Ω at VGS = 4.5 V Key Benefits • Next-generation technology optimizes several key specifications:	Original	PDF	SiZ916DT SiZ340DT SiZ914DT VMN-PT0306-1402
N-Channel MOSFETs Abstract: No abstract text available Text: Vishay Intertechnology, Inc. LOW AND MEDIUM VOLTAGE N-CHANNEL MOSFET s TrenchFET GEN IV High-Performance MOSFETs from 30 V to 60 V ThunderFET® High-Performance MOSFETs from 80 V to 200 V PowerPAK® SC-70 PowerPAK SC-75 High-Performance MOSFETs from 60 V to 150 V in	Original	PDF	SC-70 SC-75 1212-8S VMN-MS6926-1406 N-Channel MOSFETs