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    SIJ482DP Price and Stock

    Vishay Siliconix SIJ482DP-T1-GE3

    MOSFET N-CH 80V 60A PPAK SO-8
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    DigiKey SIJ482DP-T1-GE3 Reel 3,000
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    Vishay Intertechnologies SIJ482DP-T1-GE3

    N-CHANNEL 80-V (D-S) MOSFET - Tape and Reel (Alt: SIJ482DP-T1-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SIJ482DP-T1-GE3 Reel 27 Weeks 3,000
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    Mouser Electronics SIJ482DP-T1-GE3 44,375
    • 1 $1.95
    • 10 $1.48
    • 100 $1.1
    • 1000 $0.82
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    Verical SIJ482DP-T1-GE3 2,700 8
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    • 10 $1.4013
    • 100 $1.0591
    • 1000 $0.7785
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    Arrow Electronics SIJ482DP-T1-GE3 Cut Strips 2,700 27 Weeks 1
    • 1 $1.846
    • 10 $1.4013
    • 100 $1.0591
    • 1000 $0.7785
    • 10000 $0.7785
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    TTI SIJ482DP-T1-GE3 Reel 3,000
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    TME SIJ482DP-T1-GE3 3,000
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    EBV Elektronik SIJ482DP-T1-GE3 27 Weeks 3,000
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    Vishay Intertechnologies SIJ482DPT1GE3

    N-CHANNEL 80 V (D-S) MOSFET Power Field-Effect Transistor, 60A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
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    ComSIT USA SIJ482DPT1GE3 3,000
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    SIJ482DP Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIJ482DP-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 80V 60A SO-8 Original PDF

    SIJ482DP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: New Product SiJ482DP Vishay Siliconix N-Channel 80 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () (Max.) ID (A) a, g Qg (Typ.) 0.0062 at VGS = 10 V 0.0065 at VGS = 7.5 V 80 60 24 nC 0.0095 at VGS = 4.5 V TrenchFET Power MOSFET 100 % Rg and UIS Tested


    Original
    PDF SiJ482DP SiJ482DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiJ482DP Vishay Siliconix N-Channel 80 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () (Max.) ID (A) a, g Qg (Typ.) 0.0062 at VGS = 10 V 0.0065 at VGS = 7.5 V 80 60 24 nC 0.0095 at VGS = 4.5 V TrenchFET Power MOSFET 100 % Rg and UIS Tested


    Original
    PDF SiJ482DP SiJ482DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiJ482DP Vishay Siliconix N-Channel 80 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () (Max.) ID (A) a, g Qg (Typ.) 0.0062 at VGS = 10 V 0.0065 at VGS = 7.5 V 80 60 24 nC 0.0095 at VGS = 4.5 V TrenchFET Power MOSFET 100 % Rg and UIS Tested


    Original
    PDF SiJ482DP SiJ482DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    SIJ482DP

    Abstract: No abstract text available
    Text: New Product SiJ482DP Vishay Siliconix N-Channel 80 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () (Max.) ID (A) a, g Qg (Typ.) 0.0062 at VGS = 10 V 0.0065 at VGS = 7.5 V 80 60 24 nC 0.0095 at VGS = 4.5 V TrenchFET Power MOSFET 100 % Rg and UIS Tested


    Original
    PDF SiJ482DP SiJ482DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    63728

    Abstract: SIJ482DP
    Text: New Product SiJ482DP Vishay Siliconix N-Channel 80 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () (Max.) ID (A) a, g Qg (Typ.) 0.0062 at VGS = 10 V 0.0065 at VGS = 7.5 V 80 60 24 nC 0.0095 at VGS = 4.5 V TrenchFET Power MOSFET 100 % Rg and UIS Tested


    Original
    PDF SiJ482DP SiJ482DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 63728

    WE 1688

    Abstract: No abstract text available
    Text: SPICE Device Model SiJ482DP www.vishay.com Vishay Siliconix N-Channel 80 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached spice model describes the typical electrical characteristics of the N-channel vertical DMOS. The subcircuit model is extracted and optimized over the


    Original
    PDF SiJ482DP 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 WE 1688

    Untitled

    Abstract: No abstract text available
    Text: SiJ482DP_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original
    PDF SiJ482DP AN609, 1573m 7772m 3921m 1475m 9035m 1654m 4080m 1649m

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiJ482DP www.vishay.com Vishay Siliconix N-Channel 80 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the


    Original
    PDF SiJ482DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    so8 footprint

    Abstract: SIR876 si7454 si409 SiR872ADP sir878 SiS890DN si7252 si419
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs - On-Resistance Ratings Down to VGS = 4.5 V 80 V to 150 V High-Performance 80 V to 150 V Power MOSFETs KEY BENEFITS • New next-generation technology provides very low on-resistance and ultra-low figure of merit


    Original
    PDF SC-70 SC-75 Si7252DP VMN-PT0261-1209 so8 footprint SIR876 si7454 si409 SiR872ADP sir878 SiS890DN si7252 si419

    Untitled

    Abstract: No abstract text available
    Text: V i s h ay I n t e r t e c h n o l o g y, I n c . Power MOSFETs MOSFETs - On-Resistance Ratings Down to VGS = 4.5 V 80 V to 150 V High-Performance 80 V to 150 V Power MOSFETs Key Benefits • New next-generation technology provides very low on-resistance and ultra-low figure of merit


    Original
    PDF SC-75 SiB456DK Si7252DP SiS990DN Si4590DY 1212-8S VMN-PT0261-1402

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original
    PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836

    N-Channel MOSFETs

    Abstract: No abstract text available
    Text: Vishay Intertechnology, Inc. LOW AND MEDIUM VOLTAGE N-CHANNEL MOSFET s TrenchFET GEN IV High-Performance MOSFETs from 30 V to 60 V ThunderFET® High-Performance MOSFETs from 80 V to 200 V PowerPAK® SC-70 PowerPAK SC-75 High-Performance MOSFETs from 60 V to 150 V in


    Original
    PDF SC-70 SC-75 1212-8S VMN-MS6926-1406 N-Channel MOSFETs