flyback xfmr 3.5 mh
Abstract: No abstract text available
Text: IRF730A, SiHF730A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg results in Simple Drive Requirement 400 RDS(on) (Ω) VGS = 10 V 1.0 Qg (Max.) (nC) 22 Qgs (nC) 5.8 Qgd (nC) 9.3 Configuration • Improved Gate, Avalanche and Dynamic dV/dt
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Original
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PDF
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IRF730A,
SiHF730A
2002/95/EC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
flyback xfmr 3.5 mh
|
flyback xfmr 3.5 mh
Abstract: No abstract text available
Text: IRF730A, SiHF730A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg results in Simple Drive Requirement 400 RDS(on) (Ω) VGS = 10 V 1.0 Qg (Max.) (nC) 22 Qgs (nC) 5.8 Qgd (nC) 9.3 Configuration • Improved Gate, Avalanche and Dynamic dV/dt
|
Original
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PDF
|
IRF730A,
SiHF730A
2002/95/EC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
flyback xfmr 3.5 mh
|
Untitled
Abstract: No abstract text available
Text: IRF730A, SiHF730A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg results in Simple Drive Requirement 400 RDS(on) (Ω) VGS = 10 V 1.0 Qg (Max.) (nC) 22 Qgs (nC) 5.8 Qgd (nC) 9.3 Configuration • Improved Gate, Avalanche and Dynamic dV/dt
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Original
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PDF
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IRF730A,
SiHF730A
2002/95/EC
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
AN609
Abstract: IRF730 SiHF730
Text: IRF730_RC, SiHF730_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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Original
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PDF
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IRF730
SiHF730
AN609,
12-Mar-10
AN609
|
7386
Abstract: AN609 IRF730AL IRF730AS SiHF730AL SiHF730AS 90259
Text: IRF730AS_RC, IRF730AL_RC, SiHF730AS_RC, SiHF730AL_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter
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Original
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PDF
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IRF730AS
IRF730AL
SiHF730AS
SiHF730AL
AN609,
12-Mar-10
7386
AN609
90259
|
IRF730
Abstract: SiHF730 SiHF730-E3
Text: IRF730, SiHF730 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 38 • Fast Switching Qgs (nC) 5.7 • Ease of Paralleling 22 • Simple Drive Requirements Qgd (nC) Configuration
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Original
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PDF
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IRF730,
SiHF730
O-220
O-220
50lectual
18-Jul-08
IRF730
SiHF730-E3
|
flyback xfmr 3.5 mh
Abstract: No abstract text available
Text: IRF730AS, SiHF730AS, IRF730AL, SiHF730AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt
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Original
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PDF
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IRF730AS,
SiHF730AS
IRF730AL,
SiHF730AL
O-262)
O-263)
2002/95/EC
11-Mar-11
flyback xfmr 3.5 mh
|
flyback xfmr 3.5 mh
Abstract: No abstract text available
Text: IRF730AS, SiHF730AS, IRF730AL, SiHF730AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt
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Original
|
PDF
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IRF730AS,
SiHF730AS
IRF730AL,
SiHF730AL
O-262)
O-263)
2002/95/EC
11-Mar-11
flyback xfmr 3.5 mh
|
Untitled
Abstract: No abstract text available
Text: IRF730S, SiHF730S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching
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Original
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PDF
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IRF730S,
SiHF730S
2002/95/EC
O-263)
O-263
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
|
Untitled
Abstract: No abstract text available
Text: IRF730, SiHF730 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 38 • Fast Switching Qgs (nC) 5.7 • Ease of Paralleling 22 • Simple Drive Requirements Qgd (nC) Configuration
|
Original
|
PDF
|
IRF730,
SiHF730
2002/95/EC
O-220AB
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
|
Untitled
Abstract: No abstract text available
Text: IRF730A, SiHF730A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg results in Simple Drive Requirement 400 RDS(on) (Ω) VGS = 10 V 5.5 • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Qg (Max.) (nC) 22 Qgs (nC)
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Original
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PDF
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IRF730A,
SiHF730A
AN1001)
O-220
12-Mar-07
|
Untitled
Abstract: No abstract text available
Text: IRF730S, SiHF730S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching
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Original
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PDF
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IRF730S,
SiHF730S
2002/95/EC
O-263)
11-Mar-11
|
flyback xfmr 3.5 mh
Abstract: No abstract text available
Text: IRF730AS, SiHF730AS, IRF730AL, SiHF730AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 400 RDS(on) (Max.) (Ω) VGS = 10 V 1.0 Qg (Max.) (nC) 22 Qgs (nC) 5.8 Qgd (nC) 9.3 Configuration
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Original
|
PDF
|
IRF730AS,
SiHF730AS
IRF730AL,
SiHF730AL
O-262)
O-263)
12-Mar-07
flyback xfmr 3.5 mh
|
IRF730A
Abstract: SiHF730A-E3 SiHF730A flyback xfmr 3.5 mh
Text: IRF730A, SiHF730A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg results in Simple Drive Requirement 400 RDS(on) (Ω) VGS = 10 V 1.0 Qg (Max.) (nC) 22 Qgs (nC) 5.8 Qgd (nC) 9.3 Configuration • Improved Gate, Avalanche and Dynamic dV/dt
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Original
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PDF
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IRF730A,
SiHF730A
O-220
18-Jul-08
IRF730A
SiHF730A-E3
flyback xfmr 3.5 mh
|
|
|
Untitled
Abstract: No abstract text available
Text: IRF730, SiHF730 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 38 • Fast Switching Qgs (nC) 5.7 • Ease of Paralleling 22 • Simple Drive Requirements Qgd (nC) Configuration
|
Original
|
PDF
|
IRF730,
SiHF730
2002/95/EC
O-220AB
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
|
3271
Abstract: 9571 AN609 IRF730S SiHF730S
Text: IRF730S_RC, SiHF730S_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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Original
|
PDF
|
IRF730S
SiHF730S
AN609,
12-Mar-10
3271
9571
AN609
|
Untitled
Abstract: No abstract text available
Text: IRF730A, SiHF730A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg results in Simple Drive Requirement 400 RDS(on) (Ω) VGS = 10 V 1.0 Qg (Max.) (nC) 22 Qgs (nC) 5.8 Qgd (nC) 9.3 Configuration • Improved Gate, Avalanche and Dynamic dV/dt
|
Original
|
PDF
|
IRF730A,
SiHF730A
2002/95/EC
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: IRF730, SiHF730 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 38 • Fast Switching Qgs (nC) 5.7 • Ease of Paralleling 22 • Simple Drive Requirements Qgd (nC) Configuration
|
Original
|
PDF
|
IRF730,
SiHF730
2002/95/EC
O-220AB
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
|
IRF730A
Abstract: IRF730AL IRF730AS SiHF730AL SiHF730AS SiHF730AS-E3 flyback xfmr 3.5 mh
Text: IRF730AS, SiHF730AS, IRF730AL, SiHF730AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 400 RDS(on) (Max.) (Ω) VGS = 10 V 1.0 Qg (Max.) (nC) 22 Qgs (nC) 5.8 Qgd (nC) 9.3 Configuration
|
Original
|
PDF
|
IRF730AS,
SiHF730AS
IRF730AL,
SiHF730AL
O-263)
O-262)
18-Jul-08
IRF730A
IRF730AL
IRF730AS
SiHF730AS-E3
flyback xfmr 3.5 mh
|
Untitled
Abstract: No abstract text available
Text: IRF730A, SiHF730A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg results in Simple Drive Requirement 400 RDS(on) (Ω) VGS = 10 V 1.0 Qg (Max.) (nC) 22 Qgs (nC) 5.8 Qgd (nC) 9.3 Configuration • Improved Gate, Avalanche and Dynamic dV/dt
|
Original
|
PDF
|
IRF730A,
SiHF730A
2002/95/EC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
AN1001
Abstract: IRF730A SiHF730A SiHF730A-E3
Text: IRF730A, SiHF730A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg results in Simple Drive Requirement 400 RDS(on) (Ω) VGS = 10 V 5.5 • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Qg (Max.) (nC) 22 Qgs (nC)
|
Original
|
PDF
|
IRF730A,
SiHF730A
AN1001)
O-220
18-Jul-08
AN1001
IRF730A
SiHF730A-E3
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IRF730AL
Abstract: IRF730AS SiHF730AL SiHF730AS SiHF730AS-E3 SiHFL014T-E3 flyback xfmr 3.5 mh
Text: IRF730AS, SiHF730AS, IRF730AL, SiHF730AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 400 RDS(on) (Max.) (Ω) VGS = 10 V 1.0 Qg (Max.) (nC) 22 Qgs (nC) 5.8 Qgd (nC) 9.3 Configuration
|
Original
|
PDF
|
IRF730AS,
SiHF730AS
IRF730AL,
SiHF730AL
O-262)
O-263)
18-Jul-08
IRF730AL
IRF730AS
SiHF730AS-E3
SiHFL014T-E3
flyback xfmr 3.5 mh
|
Untitled
Abstract: No abstract text available
Text: IRF730S, SiHF730S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching
|
Original
|
PDF
|
IRF730S,
SiHF730S
2002/95/EC
O-263)
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
IRF730
Abstract: SiHF730 SiHF730-E3
Text: IRF730, SiHF730 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 38 • Fast Switching Qgs (nC) 5.7 • Ease of Paralleling 22 • Simple Drive Requirements Qgd (nC) Configuration
|
Original
|
PDF
|
IRF730,
SiHF730
2002/95/EC
O-220AB
O-220AB
11-Mar-11
IRF730
SiHF730-E3
|
