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    SIHF620 Price and Stock

    Vishay Siliconix SIHF620S-GE3

    SIHF620S-GE3 N-channel MOSFET Transistor, 5.2 A, 200 V, 3-Pin D2PAK | Siliconix / Vishay SIHF620S-GE3
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    RS SIHF620S-GE3 Bulk 10
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    • 10 $0.85
    • 100 $0.81
    • 1000 $0.72
    • 10000 $0.72
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    Vishay Intertechnologies SIHF620S-GE3

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    Bristol Electronics SIHF620S-GE3 920
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    Quest Components SIHF620S-GE3 736
    • 1 $2.016
    • 10 $2.016
    • 100 $2.016
    • 1000 $0.8316
    • 10000 $0.8316
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    TME SIHF620S-GE3 1
    • 1 $0.768
    • 10 $0.617
    • 100 $0.49
    • 1000 $0.457
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    EBV Elektronik SIHF620S-GE3 9 Weeks 50
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    Vishay Intertechnologies SIHF620STRL-GE3

    Transistor: N-MOSFET; unipolar; 200V; 3.3A; Idm: 18A; 50W
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME SIHF620STRL-GE3 1
    • 1 $0.927
    • 10 $0.834
    • 100 $0.663
    • 1000 $0.596
    • 10000 $0.596
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    SIHF620 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IRF620S, SiHF620S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching


    Original
    PDF IRF620S, SiHF620S 2002/95/EC O-263) 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: IRF620, SiHF620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 14 • Fast Switching Qgs (nC) 3.0 • Ease of Paralleling 7.9 • Simple Drive Requirements Qgd (nC)


    Original
    PDF IRF620, SiHF620 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: IRF620, SiHF620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 14 • Fast Switching Qgs (nC) 3.0 • Ease of Paralleling 7.9 • Simple Drive Requirements Qgd (nC)


    Original
    PDF IRF620, SiHF620 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: IRF620, SiHF620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 14 • Fast Switching Qgs (nC) 3.0 • Ease of Paralleling 7.9 • Simple Drive Requirements Qgd (nC)


    Original
    PDF IRF620, SiHF620 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    AN609

    Abstract: IRF620S SiHF620S 12727
    Text: IRF620S_RC, SiHF620S_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original
    PDF IRF620S SiHF620S AN609, 09-Mar-10 AN609 12727

    Untitled

    Abstract: No abstract text available
    Text: IRF620S, SiHF620S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching


    Original
    PDF IRF620S, SiHF620S 2002/95/EC O-263) 11-Mar-11

    IRF620S

    Abstract: SiHF620S SiHF620S-E3
    Text: IRF620S, SiHF620S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) (Ω) VGS = 10 V 0.80 Qg (Max.) (nC) 14 Qgs (nC) 3.0 Qgd (nC) 7.9 Configuration Single D D2PAK • • • • • • • • Surface Mount Available in Tape and Reel


    Original
    PDF IRF620S, SiHF620S O-263) 18-Jul-08 IRF620S SiHF620S-E3

    IRF620

    Abstract: SiHF620 SiHF620-E3
    Text: IRF620, SiHF620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 14 • Fast Switching Qgs (nC) 3.0 • Ease of Paralleling 7.9 • Simple Drive Requirements Qgd (nC) Configuration


    Original
    PDF IRF620, SiHF620 O-220 O-220 18-Jul-08 IRF620 SiHF620-E3

    Untitled

    Abstract: No abstract text available
    Text: IRF620, SiHF620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 14 • Fast Switching Qgs (nC) 3.0 • Ease of Paralleling 7.9 • Simple Drive Requirements Qgd (nC) Configuration


    Original
    PDF IRF620, SiHF620 O-220 12-Mar-07

    Untitled

    Abstract: No abstract text available
    Text: IRF620, SiHF620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 14 • Fast Switching Qgs (nC) 3.0 • Ease of Paralleling 7.9 • Simple Drive Requirements Qgd (nC)


    Original
    PDF IRF620, SiHF620 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    IRF62

    Abstract: No abstract text available
    Text: IRF620, SiHF620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 14 • Fast Switching Qgs (nC) 3.0 • Ease of Paralleling 7.9 • Simple Drive Requirements Qgd (nC)


    Original
    PDF IRF620, SiHF620 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRF62

    IRF620

    Abstract: SiHF620 SiHF620-E3
    Text: IRF620, SiHF620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 14 • Fast Switching Qgs (nC) 3.0 • Ease of Paralleling 7.9 • Simple Drive Requirements Qgd (nC)


    Original
    PDF IRF620, SiHF620 2002/95/EC O-220AB O-220AB 11-Mar-11 IRF620 SiHF620-E3

    IRF620PBF

    Abstract: No abstract text available
    Text: IRF620, SiHF620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 14 • Fast Switching Qgs (nC) 3.0 • Ease of Paralleling 7.9 • Simple Drive Requirements Qgd (nC)


    Original
    PDF IRF620, SiHF620 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRF620PBF

    Untitled

    Abstract: No abstract text available
    Text: IRF620S, SiHF620S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching


    Original
    PDF IRF620S, SiHF620S 2002/95/EC O-263) 11-Mar-11

    smd 220

    Abstract: No abstract text available
    Text: IRF620S, SiHF620S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Surface Mount 200 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 14 • Dynamic dV/dt Rating Qgs (nC) 3.0 • Repetitive Avalanche Rated 7.9 • Fast Switching Qgd (nC) Configuration


    Original
    PDF IRF620S, SiHF620S SMD-220 12-Mar-07 smd 220

    AN609

    Abstract: IRF620 SiHF620
    Text: IRF620_RC, SiHF620_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original
    PDF IRF620 SiHF620 AN609, 09-Mar-10 AN609

    Untitled

    Abstract: No abstract text available
    Text: IRF620S, SiHF620S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) () VGS = 10 V 0.80 Qg (Max.) (nC) 14 Qgs (nC) 3.0 Qgd (nC) 7.9 Configuration Single D D2PAK • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount


    Original
    PDF IRF620S, SiHF620S 2002/95/EC O-263) 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: IRF620S, SiHF620S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Surface Mount 200 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 14 • Dynamic dV/dt Rating Qgs (nC) 3.0 • Repetitive Avalanche Rated 7.9 • Fast Switching Qgd (nC) Configuration


    Original
    PDF IRF620S, SiHF620S SMD-220 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: IRF620S, SiHF620S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching


    Original
    PDF IRF620S, SiHF620S 2002/95/EC O-263) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: , IJ nc, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 Power MOSFET PRODUCT SUMMARY 200 VDS(V) RDS(on) VGS=10V (ty IRF620, SJHF620 0.80 Qg (Max.) (nC) 14 Qgs(nC) 3.0 7.9 Qgd (nC) Configuration


    Original
    PDF IRF620, SJHF620 O-220AB O-220AB