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    SIA517DJ Price and Stock

    Vishay Siliconix SIA517DJ-T1-GE3

    MOSFET N/P-CH 12V 4.5A PPAK8X8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIA517DJ-T1-GE3 Digi-Reel 32,108 1
    • 1 $0.91
    • 10 $0.565
    • 100 $0.91
    • 1000 $0.25409
    • 10000 $0.25409
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    SIA517DJ-T1-GE3 Cut Tape 32,108 1
    • 1 $0.91
    • 10 $0.565
    • 100 $0.91
    • 1000 $0.25409
    • 10000 $0.25409
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    SIA517DJ-T1-GE3 Reel 30,000 3,000
    • 1 -
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    • 1000 -
    • 10000 $0.175
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    RS SIA517DJ-T1-GE3 Bulk 20
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    Velocity Electronics SIA517DJ-T1-GE3 4
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    New Advantage Corporation SIA517DJ-T1-GE3 12,000 1
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    • 10000 $0.2771
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    Vishay Intertechnologies SIA517DJ-T1-GE3

    Trans MOSFET N/P-CH 12V 4.5A/4.3A 6-Pin PowerPAK SC-70 T/R - Tape and Reel (Alt: SIA517DJ-T1-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SIA517DJ-T1-GE3 Reel 3,000 8 Weeks 3,000
    • 1 -
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    • 10000 $0.1722
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    SIA517DJ-T1-GE3 Ammo Pack 18 Weeks, 3 Days 1
    • 1 $0.676
    • 10 $0.561
    • 100 $0.423
    • 1000 $0.423
    • 10000 $0.423
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    Mouser Electronics SIA517DJ-T1-GE3 93,274
    • 1 $0.71
    • 10 $0.459
    • 100 $0.322
    • 1000 $0.227
    • 10000 $0.175
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    Verical SIA517DJ-T1-GE3 3,000 3,000
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    Arrow Electronics SIA517DJ-T1-GE3 3,000 8 Weeks 3,000
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    • 10000 $0.2036
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    Newark SIA517DJ-T1-GE3 Cut Tape 8,153 1
    • 1 $0.254
    • 10 $0.254
    • 100 $0.254
    • 1000 $0.254
    • 10000 $0.254
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    SIA517DJ-T1-GE3 Reel 3,000
    • 1 $0.247
    • 10 $0.247
    • 100 $0.247
    • 1000 $0.247
    • 10000 $0.223
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    Quest Components SIA517DJ-T1-GE3 69,600
    • 1 $1.045
    • 10 $1.045
    • 100 $1.045
    • 1000 $1.045
    • 10000 $0.3135
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    TTI SIA517DJ-T1-GE3 Reel 57,000 3,000
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    • 10000 $0.17
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    TME SIA517DJ-T1-GE3 1
    • 1 $0.581
    • 10 $0.507
    • 100 $0.396
    • 1000 $0.396
    • 10000 $0.396
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    Avnet Asia SIA517DJ-T1-GE3 10 Weeks 3,000
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    • 10000 $0.34904
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    EBV Elektronik SIA517DJ-T1-GE3 9 Weeks 3,000
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    Vishay Intertechnologies SIA517DJ-T1-GE3.

    Channel Type:N And P Channel; Drain Source Voltage Vds N Channel:12V; Drain Source Voltage Vds P Channel:12V; Continuous Drain Current Id N Channel:4.5A; Continuous Drain Current Id P Channel:4.5A; No. Of Pins:6Pins; Product Range:- Rohs Compliant: No |Vishay SIA517DJ-T1-GE3.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark SIA517DJ-T1-GE3. Reel 3,000 3,000
    • 1 $0.247
    • 10 $0.247
    • 100 $0.247
    • 1000 $0.247
    • 10000 $0.223
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    Vishay Huntington SIA517DJ-T1-GE3

    MOSFET N/P-CH 12V 4.5A SC-70-6
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Win Source Electronics SIA517DJ-T1-GE3 71,934
    • 1 -
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    • 1000 $0.163
    • 10000 $0.14
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    SIA517DJ Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIA517DJ-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 12V 4.5A SC-70-6 Original PDF

    SIA517DJ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SiA517DJ

    Abstract: S09-1808
    Text: SPICE Device Model SiA517DJ Vishay Siliconix N-Channel and P-Channel 12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel and p-channel vertical DMOS. The subcircuit model is extracted and optimized over


    Original
    PDF SiA517DJ 18-Jul-08 S09-1808

    Untitled

    Abstract: No abstract text available
    Text: New Product SiA517DJ Vishay Siliconix N- and P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 12 - 12 RDS(on) (Ω) ID (A) 0.029 at VGS = 4.5 V 4.5a 0.034 at VGS = 2.5 V 4.5a 0.044 at VGS = 1.8 V 4.5a 0.065 at VGS = 1.5 V 0.061 at VGS = - 4.5 V


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    PDF SiA517DJ SC-70-6 SC-70 2002/95/EC 11-Mar-11

    16503

    Abstract: AN609
    Text: SiA517DJ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original
    PDF SiA517DJ AN609, CONFIGU091 09-Apr-09 16503 AN609

    SIA517DJ-T1-GE3

    Abstract: SIA517DJ SC-70-6
    Text: New Product SiA517DJ Vishay Siliconix N- and P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 12 - 12 RDS(on) (Ω) ID (A) 0.029 at VGS = 4.5 V 4.5a 0.034 at VGS = 2.5 V 4.5a 0.044 at VGS = 1.8 V 4.5a 0.065 at VGS = 1.5 V 0.061 at VGS = - 4.5 V


    Original
    PDF SiA517DJ SC-70 2002/95/EC 18-Jul-08 SIA517DJ-T1-GE3 SC-70-6

    Untitled

    Abstract: No abstract text available
    Text: SiA517DJ Vishay Siliconix N- and P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 12 - 12 RDS(on) () 0.029 at VGS = 4.5 V ID (A) 0.034 at VGS = 2.5 V 4.5a 0.044 at VGS = 1.8 V 4.5a • TrenchFET Power MOSFETs • Thermally Enhanced PowerPAK®


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    PDF SiA517DJ SC-70 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SC-70-6

    Abstract: SIA517DJ-T1-GE3
    Text: New Product SiA517DJ Vishay Siliconix N- and P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 12 - 12 RDS(on) (Ω) ID (A) 0.029 at VGS = 4.5 V 4.5a 0.034 at VGS = 2.5 V 4.5a 0.044 at VGS = 1.8 V 4.5a 0.065 at VGS = 1.5 V 0.061 at VGS = - 4.5 V


    Original
    PDF SiA517DJ SC-70 2002/95/EC 11-Mar-11 SC-70-6 SIA517DJ-T1-GE3

    0463

    Abstract: No abstract text available
    Text: SiA517DJ Vishay Siliconix N- and P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 12 - 12 RDS(on) () 0.029 at VGS = 4.5 V ID (A) 0.034 at VGS = 2.5 V 4.5a 0.044 at VGS = 1.8 V 4.5a • TrenchFET Power MOSFETs • Thermally Enhanced PowerPAK®


    Original
    PDF SiA517DJ SC-70 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 0463

    Untitled

    Abstract: No abstract text available
    Text: New Product SiA517DJ Vishay Siliconix N- and P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 12 - 12 RDS(on) (Ω) ID (A) 0.029 at VGS = 4.5 V 4.5a 0.034 at VGS = 2.5 V 4.5a 0.044 at VGS = 1.8 V 4.5a 0.065 at VGS = 1.5 V 0.061 at VGS = - 4.5 V


    Original
    PDF SiA517DJ SC-70 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiA517DJ Vishay Siliconix N- and P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 12 - 12 RDS(on) (Ω) ID (A) 0.029 at VGS = 4.5 V 4.5a 0.034 at VGS = 2.5 V 4.5a 0.044 at VGS = 1.8 V 4.5a 0.065 at VGS = 1.5 V 0.061 at VGS = - 4.5 V


    Original
    PDF SiA517DJ SC-70-6 SC-70 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    NX3008

    Abstract: IRLHS6242 SiA431DJ AON2408 SSM6J503NU IRLHS2242 AON2420 DMN3730UFB4 FDMA1028NZ FDMA3028N
    Text: Advanced cross reference list DFN* MOSFETs *DFN: discrete flat no-leads *in development, release in Q3 2012 0.6 0.6 1.1 1.1 1 1 1 0.9 0.9 1 0.9 0.53 0.53 0.9 0.9 0.45 0.45 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.6 0.6 0.5 0.5 1 1 1.5 0.95 0.95 1.05 1.05 0.95 1.05 1.1


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    PDF AON2240 AON2401 AON2405 AON2406 AON2407 AON2408 AON2409 AON2410 AON2420 AON2701 NX3008 IRLHS6242 SiA431DJ SSM6J503NU IRLHS2242 DMN3730UFB4 FDMA1028NZ FDMA3028N

    SiA427DJ

    Abstract: SiA450DJ SiA447DJ SiA413DJ SiA413 SiA445EDJ SIA915DJ
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - Small 2 mm x 2 mm Size and Low On-resistance AND TEC I INNOVAT O L OGY PowerPAK SC-70 N HN POWER MOSFETs O 19 62-2012 Half the Size of TSOP-6 Without Compromising On-Resistance KEY BENEFITS • 2 mm x 2 mm footprint area is 50 % of TSOP-6 with comparable on-resistance:


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    PDF SC-70 SC-70 com/mosfets/powerpak-sc-70-package/ VMN-PT0131-1209 SiA427DJ SiA450DJ SiA447DJ SiA413DJ SiA413 SiA445EDJ SIA915DJ

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


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    PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836

    Diode SOT-23 marking 15d

    Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
    Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs


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    PDF Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477