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    SI9424DY Search Results

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    SI9424DY Price and Stock

    onsemi SI9424DY

    MOSFET P-CH 20V 8A 8SOIC
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    DigiKey SI9424DY Cut Tape 1
    • 1 $1.33
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    SI9424DY Reel 2,500
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    • 10000 $0.34919
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    Fairchild Semiconductor Corporation SI9424DY

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    Bristol Electronics SI9424DY 1,380 5
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    • 100 $0.4219
    • 1000 $0.315
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    Quest Components SI9424DY 1,104
    • 1 $1.5
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    • 100 $0.45
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    Rochester Electronics SI9424DY 140 1
    • 1 $0.455
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    Vishay Siliconix SI9424DY

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    Bristol Electronics SI9424DY 168
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    Quest Components SI9424DY 23
    • 1 $0.9138
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    SI9424DY 1
    • 1 $2.7608
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    Vishay Intertechnologies SI9424DY

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    Bristol Electronics SI9424DY 25
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    Quest Components SI9424DY 20
    • 1 $2.16
    • 10 $1.62
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    Vishay Siliconix SI9424DY-T1

    7.7A, 20V, 0.025OHM, P-CHANNEL, SI, POWER, MOSFET
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    Quest Components SI9424DY-T1 11,344
    • 1 $0.81
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    SI9424DY-T1 2,000
    • 1 $1.35
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    • 1000 $0.54
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    Component Electronics, Inc SI9424DY-T1 90
    • 1 $1.54
    • 10 $1.54
    • 100 $1.15
    • 1000 $1
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    Find more SI9424DY price and stock on Findchips.com

    SI9424DY Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI9424DY Fairchild Semiconductor Single P-Channel 2.5V Specified PowerTrench MOSFET Original PDF
    Si9424DY Toshiba Power MOSFETs Cross Reference Guide Original PDF
    SI9424DY Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET Original PDF
    SI9424DY_NL Fairchild Semiconductor Single P-Channel 2.5V Specified PowerTrench MOSFET Original PDF
    Si9424DY SPICE Device Model Vishay P-Channel 2.5-V (G.-S) MOSFET Original PDF
    SI9424DY-T1 Vishay Intertechnology P-Channel 2.5-V (G-S) Rated MOSFET Original PDF

    SI9424DY Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Si9424BDY-E3

    Abstract: Si9424BDY-T1 Si9424DY-T1 Si9424BDY-T1-E3 Si9424BDY Si9424DY
    Text: Specification Comparison Vishay Siliconix Si9424BDY vs. Si9424DY Description: P-Channel, 2.5 V G-S MOSFET Package: SOIC-8 Pin Out: Identical Part Number Replacements: Si9424BDY Replaces Si9424DY Si9424BDY-E3 (Lead (Pb)-free version) Replaces Si9424DY Si9424BDY-T1 Replaces Si9424DY-T1


    Original     		Si9424BDY Si9424DY Si9424BDY-E3 Si9424BDY-T1 Si9424DY-T1 Si9424BDY-T1-E3 PDF

    Si9424DY

    Abstract: No abstract text available
    Text: Si9424DY Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (A) 0.025 @ VGS = –4.5 V "7.7 0.033 @ VGS = –2.5 V "6.6 S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		Si9424DY S-56950--Rev. 11-Jan-99 PDF

    Si9424DY

    Abstract: Si9434DY
    Text: Si9434DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –12 rDS(on) (W) ID (A) 0.040 @ VGS = –4.5 V "6.4 0.060 @ VGS = –2.5 V "5.1 Recommended upgrade: Si9424DY S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET


    Original     		Si9434DY Si9424DY S-47586--Rev. 30-Apr-96 PDF

    Si9424DY

    Abstract: No abstract text available
    Text: Si9424DY Single P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior


    Original     		Si9424DY PDF

    Untitled

    Abstract: No abstract text available
    Text: Si9424DY Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) - 20 rDS(on) (W) ID (A) 0.025 @ VGS = - 4.5 V "7.7 0.033 @ VGS = - 2.5 V "6.6 S SO-8 S 8 D 2 7 D S 3 6 D G 4 5 D S 1 G Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		Si9424DY 08-Apr-05 PDF

    Si9424DY

    Abstract: Si9434DY
    Text: Si9434DY Siliconix P-Channel Enhancement-Mode MOSFET PRODUCT SUMMARY VDS V –20 RDS(ON) (W) ID (A) 0.040 @ VGS = –4.5 V "6.4 0.060 @ VGS = –2.5 V "5.1 Recommended upgrade: Si9424DY S S S SO-8 S 8 D 2 7 D S 3 6 D G 4 5 D S 1 G Top View D D D D P-Channel MOSFET


    Original     		Si9434DY Si9424DY S-56981--Rev. 15-Jun-98 PDF

    Si6433DQ

    Abstract: Si9424DY Si9433DY
    Text: Si9433DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 rDS(on) (W) ID (A) 0.065 @ VGS = –4.5 V "5.4 0.100 @ VGS = –2.7 V "4.2 Recommended upgrade: Si9424DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6433DQ S S S SO-8 S


    Original     		Si9433DY Si9424DY Si6433DQ S-47958--Rev. 15-Apr-96 PDF

    Si9424DY

    Abstract: No abstract text available
    Text: Si9424DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –12 rDS(on) (W) ID (A) 0.025 @ VGS = –4.5 V "7.7 0.033 @ VGS = –2.5 V "6.6 S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D P-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)


    Original     		Si9424DY S-47958--Rev. 15-Apr-96 PDF

    INVERTER 1A 12V

    Abstract: 12v inverter circuit 2N4401 2N4403 EC31QS04 MAX1856 Si9424DY VP2-0066 33mOhm
    Text: 04/18/01 - RWY +3.5V to -12V at 300mA. This uses the MAX1856, transistors to invert the gate drive, and an inductor to make an inverter. This circuit has not been built and some tweaking may be necessary. N1 Si9424DY R7 100k 33mOhm, -20V +3.5V INPUT R5 270


    Original     		300mA. MAX1856, Si9424DY 33mOhm, 2N4403 2N4401 MAX1856 100kHz) 300mA 150uF INVERTER 1A 12V 12v inverter circuit 2N4401 2N4403 EC31QS04 VP2-0066 33mOhm PDF

    Si9434DY

    Abstract: Si9424DY vishay siliconix "-98" S-56981-Rev
    Text: Si9434DY Siliconix P-Channel Enhancement-Mode MOSFET PRODUCT SUMMARY VDS V –20 RDS(ON) (W) ID (A) 0.040 @ VGS = –4.5 V "6.4 0.060 @ VGS = –2.5 V "5.1 Recommended upgrade: Si9424DY S S S SO-8 S 8 D 2 7 D S 3 6 D G 4 5 D S 1 G Top View D D D D P-Channel MOSFET


    Original     		Si9434DY Si9424DY 18-Jul-08 vishay siliconix "-98" S-56981-Rev PDF

    Si9434DY

    Abstract: Si9424DY
    Text: Si9434DY Siliconix P-Channel Enhancement-Mode MOSFET PRODUCT SUMMARY VDS V –20 RDS(ON) (W) ID (A) 0.040 @ VGS = –4.5 V "6.4 0.060 @ VGS = –2.5 V "5.1 Recommended upgrade: Si9424DY S S S SO-8 S 8 D 2 7 D S 3 6 D G 4 5 D S 1 G Top View D D D D P-Channel MOSFET


    Original     		Si9434DY Si9424DY 08-Apr-05 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si9433DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 20 rDS(on) (W) ID (A) 0.045 @ VGS = –4.5 V "5.4 0.070 @ VGS = –2.7 V "4.2 Recommended upgrade: Si9424DY Lower profile/smaller size see: Si6433DQ S S S SO-8 S 1 8 D S 2 7 D S 3 6 D


    Original     		Si9433DY Si9424DY Si6433DQ S-51358--Rev. 18-Dec-96 PDF

    Si9424DY

    Abstract: Si9434DY
    Text: Si9434DY Siliconix P-Channel Enhancement-Mode MOSFET PRODUCT SUMMARY VDS V –20 RDS(ON) (W) ID (A) 0.040 @ VGS = –4.5 V "6.4 0.060 @ VGS = –2.5 V "5.1 Recommended upgrade: Si9424DY S S S SO-8 S 8 D 2 7 D S 3 6 D G 4 5 D S 1 G Top View D D D D P-Channel MOSFET


    Original     		Si9434DY Si9424DY Diode50 S-56981--Rev. 15-Jun-98 PDF

    CBVK741B019

    Abstract: F011 F63TNR F852 FDS9953A L86Z Si9424DY
    Text: Si9424DY Single P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior


    Original     		Si9424DY CBVK741B019 F011 F63TNR F852 FDS9953A L86Z PDF

    Si9424DY

    Abstract: Si9434DY
    Text: Si9434DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –12 rDS(on) (W) ID (A) 0.040 @ VGS = –4.5 V "6.4 0.060 @ VGS = –2.5 V "5.1 Recommended upgrade: Si9424DY S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET


    Original     		Si9434DY Si9424DY S-47586--Rev. 30-Apr-96 PDF

    Si6433DQ

    Abstract: Si9424DY Si9433DY
    Text: Si9433DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 rDS(on) (W) ID (A) 0.065 @ VGS = –4.5 V "5.4 0.100 @ VGS = –2.7 V "4.2 Recommended upgrade: Si9424DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6433DQ S S S SO-8 S


    Original     		Si9433DY Si9424DY Si6433DQ S-47958--Rev. 15-Apr-96 PDF

    Si9424DY

    Abstract: Si9434DY
    Text: Si9434DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –12 rDS(on) (W) ID (A) 0.040 @ VGS = –4.5 V "6.4 0.060 @ VGS = –2.5 V "5.1 Recommended upgrade: Si9424DY S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET


    Original     		Si9434DY Si9424DY S-47586--Rev. 30-Apr-96 PDF

    Si9424DY

    Abstract: No abstract text available
    Text: Si9424DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –12 rDS(on) (W) ID (A) 0.025 @ VGS = –4.5 V "7.7 0.033 @ VGS = –2.5 V "6.6 S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D P-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)


    Original     		Si9424DY S-47958--Rev. 15-Apr-96 PDF

    Si9424DY

    Abstract: No abstract text available
    Text: Si9424DY Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (A) 0.025 @ VGS = –4.5 V "7.7 0.033 @ VGS = –2.5 V "6.6 S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		Si9424DY S-56950--Rev. 11-Jan-99 PDF

    Si9424DY

    Abstract: vishay siliconix 99
    Text: Si9424DY Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) - 20 rDS(on) (W) ID (A) 0.025 @ VGS = - 4.5 V "7.7 0.033 @ VGS = - 2.5 V "6.6 S SO-8 S 8 D 2 7 D S 3 6 D G 4 5 D S 1 G Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		Si9424DY 18-Jul-08 vishay siliconix 99 PDF

    Si9424DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si9424DY Vishay Siliconix P-Channel 2.5-V G.-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si9424DY 18-Jul-08 PDF

    Si9424DY

    Abstract: No abstract text available
    Text: Si9424DY P-Channel 2.5-V G-S Rated MOSFET Product Summary VDS (V) –12 rDS(on) (W) ID (A) 0.025 @ VGS = –4.5 V "7.7 0.033 @ VGS = –2.5 V "6.6 S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D P-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)


    Original     		Si9424DY S-49520--Rev. 18-Dec-96 PDF

    si9433dy

    Abstract: Si6433DQ Si9424DY
    Text: Si9433DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 rDS(on) (W) ID (A) 0.045 @ VGS = –4.5 V "5.4 0.070 @ VGS = –2.7 V "4.2 Recommended upgrade: Si9424DY Lower profile/smaller size see: Si6433DQ S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G


    Original     		Si9433DY Si9424DY Si6433DQ S-51358--Rev. 18-Dec-96 PDF

    Si9424DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si9424DY Vishay Siliconix P-Channel 2.5-V G.-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si9424DY 19-Nov-98 PDF