Untitled
Abstract: No abstract text available
Text: Si8487DB www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY -30 • TrenchFET power MOSFET RDS(on) () MAX. ID (A) a, e 0.031 at VGS = -10 V -7.7 • Low-on resistance 0.035 at VGS = -4.5 V -7.3 • Ultra-small 1.6 mm x 1.6 mm maximum outline
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Si8487DB
Si8409DB
848xx
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si8487DB www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Original
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PDF
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Si8487DB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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si8487
Abstract: No abstract text available
Text: Si8487DB Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY (A)a, e VDS (V) RDS(on) () Max. 0.031 at VGS = - 10 V - 7.7 - 30 0.035 at VGS = - 4.5 V - 7.3 0.045 at VGS = - 2.5 V - 6.4 ID • Halogen-free According to IEC 61249-2-21 Definition
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Original
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PDF
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Si8487DB
Si8409DB
2002/95/EC
11-Mar-11
si8487
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63635
Abstract: Si8487DB
Text: SPICE Device Model Si8487DB www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Original
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PDF
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Si8487DB
11-Mar-11
63635
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SI8487DB-T1-E1
Abstract: 71990 SI8902 si8487
Text: Si8487DB Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY ID (A)a, e VDS (V) RDS(on) () Max. 0.031 at VGS = - 10 V - 7.7 - 30 0.035 at VGS = - 4.5 V - 7.3 0.045 at VGS = - 2.5 V - 6.4 TrenchFET Power MOSFET Low-on Resistance Ultra-Small 1.6 mm x 1.6 mm Maximum Outline
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Original
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PDF
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Si8487DB
Si8409DB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
SI8487DB-T1-E1
71990
SI8902
si8487
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Untitled
Abstract: No abstract text available
Text: Si8487DB Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY (A)a, e VDS (V) RDS(on) () Max. 0.031 at VGS = - 10 V - 7.7 - 30 0.035 at VGS = - 4.5 V - 7.3 0.045 at VGS = - 2.5 V - 6.4 ID • Halogen-free According to IEC 61249-2-21 Definition
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Original
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PDF
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Si8487DB
Si8409DB
2002/95/EC
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: Si8487DB Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY ID (A)a, e VDS (V) RDS(on) () Max. 0.031 at VGS = - 10 V - 7.7 - 30 0.035 at VGS = - 4.5 V - 7.3 0.045 at VGS = - 2.5 V - 6.4 TrenchFET Power MOSFET Low-on Resistance Ultra-Small 1.6 mm x 1.6 mm Maximum Outline
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Original
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PDF
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Si8487DB
Si8409DB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si8487DB Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY (A)a, e VDS (V) RDS(on) () Max. 0.031 at VGS = - 10 V - 7.7 - 30 0.035 at VGS = - 4.5 V - 7.3 0.045 at VGS = - 2.5 V - 6.4 ID • Halogen-free According to IEC 61249-2-21 Definition
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Original
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PDF
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Si8487DB
Si8409DB
2002/95/EC
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: Si8487DB Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY ID (A)a, e VDS (V) RDS(on) () Max. 0.031 at VGS = - 10 V - 7.7 - 30 0.035 at VGS = - 4.5 V - 7.3 0.045 at VGS = - 2.5 V - 6.4 TrenchFET Power MOSFET Low-on Resistance Ultra-Small 1.6 mm x 1.6 mm Maximum Outline
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Original
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PDF
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Si8487DB
Si8409DB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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SI-8100D
Abstract: Si8409DB Si8461 si8466 SI8425 si8812 si8802 SI8466EDB si8489 Si8100DB
Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - World’s Smallest Chipscale MOSFETs AND TEC I INNOVAT O L OGY MICRO FOOT N HN POWER MOSFETs O 19 62-2012 World’s Smallest Chipscale MOSFETs KEY BENEFITS • Smallest MOSFET footprints of 0.8 mm x 0.8 mm, 1 mm x 1 mm, 1.2 mm x 1 mm,
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Si8407DB
Si8439DB
Si8415DB
Si8425DB
Si8473EDB
Si8413DB
Si8487DB
Si8409DB
Si8483DB
Si8499DB
SI-8100D
Si8461
si8466
SI8425
si8812
si8802
SI8466EDB
si8489
Si8100DB
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Untitled
Abstract: No abstract text available
Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs MOSFETs - Lowest On-Resistance Per Area Achieved for a P-Channel MOSFET TrenchFET Gen III - P-Channel Breakthrough P-Channel Technology Dramatically Cuts RDS on KEY BENEFITS • Lowest on-resistance per area achieved for a p-channel MOSFET: down to half of
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SC-75
Si1865DDL
Si7997DP
SiA923AEDJ
SiA929DJ
SC-70
SiA527DJ
SiA537EDJ
VMN-PT0197-1402
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Untitled
Abstract: No abstract text available
Text: Vishay Intertechnology, Inc. P-CHANNEL GEN III MOSFETs PowerPAK Thermally Enhanced, High Current Handling Capability LITTLE FOOT® Wide Range of Battery Operated Applications MICRO FOOT® Best RDS on per Outline Area DUAL P-CHANNELS Thermally Enhanced,
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1212-8S
Si7157DP
SiSS23DN
Si5415AEDU
com/mosfets/12-rated-on-res/
VMN-MS6912-1406
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Si7141
Abstract: SiA447DJ SI7615A
Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - Lowest On-Resistance Per Area Achieved for a P-Channel MOSFET AND TEC I INNOVAT O L OGY TrenchFET Gen III - P-Channel N HN POWER MOSFETs O 19 62-2012 Breakthrough P-Channel Technology Dramatically Cuts RDS on
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SC-75
SC-70
VMN-PT0197-1209
Si7141
SiA447DJ
SI7615A
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si7121
Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®
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Mediu33-4-9337-2727
VMN-SG2127-1210
si7121
Si4914B
SI-4102
SI4599
Si4483A
sir166
irfd120
si7949
si4459a
SIR836
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