Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SI7139DP Search Results

    SF Impression Pixel

    SI7139DP Price and Stock

    Vishay Siliconix SI7139DP-T1-GE3

    MOSFET P-CH 30V 40A PPAK SO-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI7139DP-T1-GE3 Digi-Reel 3,559 1
    • 1 $2.09
    • 10 $1.335
    • 100 $2.09
    • 1000 $0.65989
    • 10000 $0.65989
    		Buy Now
    SI7139DP-T1-GE3 Cut Tape 3,559 1
    • 1 $2.09
    • 10 $1.335
    • 100 $2.09
    • 1000 $0.65989
    • 10000 $0.65989
    		Buy Now
    SI7139DP-T1-GE3 Reel 3,000 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.5575
    		Buy Now

    Vishay Intertechnologies SI7139DP-T1-GE3

    P-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SI7139DP-T1-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SI7139DP-T1-GE3 Reel 6,000 18 Weeks 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.59183
    		Buy Now
    Mouser Electronics SI7139DP-T1-GE3 9,294
    • 1 $1.59
    • 10 $1.08
    • 100 $0.86
    • 1000 $0.619
    • 10000 $0.564
    		Buy Now
    Verical SI7139DP-T1-GE3 3,000 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.6102
    		Buy Now
    Arrow Electronics SI7139DP-T1-GE3 3,000 18 Weeks 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.6134
    		Buy Now
    Newark SI7139DP-T1-GE3 Bulk 27,882 1
    • 1 $1.61
    • 10 $1.35
    • 100 $1.08
    • 1000 $0.933
    • 10000 $0.933
    		Buy Now
    TTI SI7139DP-T1-GE3 Reel 6,000 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.558
    		Buy Now
    Avnet Asia SI7139DP-T1-GE3 20 Weeks 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    EBV Elektronik SI7139DP-T1-GE3 19 Weeks 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    Vishay Huntington SI7139DP-T1-GE3

    MOSFET P-CH 30V 40A PPAK SO-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Win Source Electronics SI7139DP-T1-GE3 40,011
    • 1 -
    • 10 -
    • 100 $0.8878
    • 1000 $0.5919
    • 10000 $0.5919
    		Buy Now

    SI7139DP Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI7139DP-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 40A 8-SOIC Original PDF

    SI7139DP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    datasheet of 8870

    Abstract: AN609
    Text: Si7139DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF Si7139DP AN609, 21-Sep-09 datasheet of 8870 AN609

    si7139

    Abstract: 40D vishay
    Text: New Product Si7139DP Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.0055 at VGS = - 10 V - 40d 0.0090 at VGS = - 4.5 V - 40d • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si7139DP 2002/95/EC Si7139DP-T1-GE3 18-Jul-08 si7139 40D vishay

    si7139

    Abstract: Si7139DP K1 40D
    Text: New Product Si7139DP Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.0055 at VGS = - 10 V - 40d 0.0090 at VGS = - 4.5 V - 40d • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si7139DP 2002/95/EC Si7139DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si7139 K1 40D

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si7139DP www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si7139DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7139DP Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.0055 at VGS = - 10 V - 40d 0.0090 at VGS = - 4.5 V - 40d • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si7139DP 2002/95/EC Si7139DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    1766

    Abstract: No abstract text available
    Text: SPICE Device Model Si7139DP Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si7139DP 18-Jul-08 1766

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7139DP Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.0055 at VGS = - 10 V - 40d 0.0090 at VGS = - 4.5 V - 40d • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si7139DP 2002/95/EC Si7139DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7139DP Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.0055 at VGS = - 10 V - 40d 0.0090 at VGS = - 4.5 V - 40d • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si7139DP 2002/95/EC Si7139DP-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7139DP Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.0055 at VGS = - 10 V - 40d 0.0090 at VGS = - 4.5 V - 40d • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si7139DP 2002/95/EC Si7139DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836

    Diode SOT-23 marking 15d

    Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
    Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs


    Original     		PDF Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477