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Vishay Siliconix SI5980DU-T1-GE3 MOSFET 2N-CH 100V 2.5A CHIPFET
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DigiKey	SI5980DU-T1-GE3	Cut Tape				1 - 10 - 100 - 1000 - 10000 -	Buy Now
	SI5980DU-T1-GE3	Digi-Reel			1	1 $0.72 10 $0.72 100 $0.72 1000 $0.72 10000 $0.72	Buy Now
Vishay Intertechnologies SI5980DU-T1-GE3
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Bristol Electronics	SI5980DU-T1-GE3		909			1 - 10 - 100 - 1000 - 10000 -	Get Quote

SI5980DU Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SI5980DU-T1-GE3		Vishay Siliconix	FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 100V 2.5A CHIPFET		Original	PDF

SI5980DU Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
4604 mosfet Abstract: 4604 Si598 AN609 Text: Si5980DU_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	PDF	Si5980DU AN609, 10-Nov-09 4604 mosfet 4604 Si598 AN609
Untitled Abstract: No abstract text available Text: Si5980DU Vishay Siliconix Dual N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 100 0.567 at VGS = 10 V 2.5 2.2 nC PowerPAK ChipFET Dual 1 Marking Code 2 S1 G1 8 CE 3 D1 7 Part # Code G2 D2 6 Lot Traceability and Date Code	Original	PDF	Si5980DU 2002/95/EC Si5980DUllectual 18-Jul-08
f 0472 N-Channel MOSFET Abstract: si5980 Text: Si5980DU Vishay Siliconix Dual N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 100 0.567 at VGS = 10 V 2.5 2.2 nC PowerPAK ChipFET Dual 1 Marking Code 2 S1 G1 CE 3 XXX Lot Traceability and Date Code D1 8 4 S2 D1	Original	PDF	Si5980DU 2002/95/EC Si5980DU-T1-GE3 18-Jul-08 f 0472 N-Channel MOSFET si5980
Untitled Abstract: No abstract text available Text: Si5980DU Vishay Siliconix Dual N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 100 0.567 at VGS = 10 V 2.5 2.2 nC PowerPAK ChipFET Dual 1 Marking Code 2 S1 G1 CE 3 XXX Lot Traceability and Date Code D1 8 4 S2 D1	Original	PDF	Si5980DU 2002/95/EC Si5980DUelectronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: V i s h ay I n te r tec h n olo g y, I n c . Power mosfets Powe rPA K ChipFET® M O S F E ts Product Sheet 3 W Maximum Power Dissipation in Compact 3 mm x 1.8 mm Footprint Area: Replace TSOP-6 and SO-8 MOSFETs for Lower Thermal Resistance and Smaller Footprints	Original	PDF	VMN-PT0102-1007
SI5517 Abstract: si5459 Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs – 3 W Maximum PD in Compact 3 mm x 1.8 mm Outline AND TEC I INNOVAT O L OGY PowerPAK ChipFET® N HN POWER MOSFETs O 19 62-2012 Replace TSOP-6 and SO-8 MOSFETs for Lower Thermal Resistance and Smaller Footprints	Original	PDF	Si5517DU VMN-PT0102-1209 SI5517 si5459
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	PDF	Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836