Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SI5915BDC Search Results

    SF Impression Pixel

    SI5915BDC Price and Stock

    Vishay Siliconix SI5915BDC-T1-E3

    MOSFET 2P-CH 8V 4A 1206-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI5915BDC-T1-E3 Reel 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.40423
    		Buy Now

    Vishay Siliconix SI5915BDC-T1-GE3

    MOSFET 2P-CH 8V 4A 1206-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI5915BDC-T1-GE3 Reel 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.40423
    		Buy Now

    SI5915BDC Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI5915BDC-T1-E3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 8V 4A 1206-8 Original PDF
    SI5915BDC-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 8V 4A 1206-8 Original PDF

    SI5915BDC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si5915BDC

    Abstract: UA712
    Text: Si5915BDC Vishay Siliconix Dual P-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.070 at VGS = - 4.5 V 4a 0.086 at VGS = - 2.5 V 4a 0.145 at VGS = - 1.8 V 3.6 Qg (Typ.) 5 nC • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si5915BDC 2002/95/EC 18-Jul-08 UA712

    Si5915BDC

    Abstract: No abstract text available
    Text: SPICE Device Model Si5915BDC Vishay Siliconix Dual P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si5915BDC S-71398Rev. 16-Jul-07

    ua712

    Abstract: Si5915BDC
    Text: New Product Si5915BDC Vishay Siliconix Dual P-Channel 8-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 rDS(on) (Ω) ID (A) 0.070 at VGS = - 4.5 V 4a 0.086 at VGS = - 2.5 V 4a 0.145 at VGS = - 1.8 V 3.6 Qg (Typ) • TrenchFET Power MOSFET • Low Thermal Resistance


    Original     		PDF Si5915BDC Si5915BDC-T1-E3 18-Jul-08 ua712

    Si5915BDC

    Abstract: No abstract text available
    Text: SPICE Device Model Si5915BDC Vishay Siliconix Dual P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si5915BDC 18-Jul-08

    74689

    Abstract: AN609 Si5915BDC
    Text: Si5915BDC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si5915BDC AN609 09-May-07 74689

    Si5915BDC

    Abstract: No abstract text available
    Text: New Product Si5915BDC Vishay Siliconix Dual P-Channel 8-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 rDS(on) (Ω) ID (A) 0.070 at VGS = - 4.5 V 4a 0.086 at VGS = - 2.5 V 4a 0.145 at VGS = - 1.8 V 3.6 Qg (Typ) • TrenchFET Power MOSFET • Low Thermal Resistance


    Original     		PDF Si5915BDC Si5915BDC-T1-E3 08-Apr-05

    Si5915BDC

    Abstract: Si5915DC Si5915DC-T1
    Text: Specification Comparison Vishay Siliconix Si5915BDC vs. Si5915DC Description: Package: Pin Out: Dual N-Channel 8-V D-S MOSFET 1206-8 ChipFET Identical Part Number Replacements Si5915BDC-T1-E3 Replaces Si5915DC-T1-E3 Si5915BDC-T1-E3 Replaces Si5915DC-T1


    Original     		PDF Si5915BDC Si5915DC Si5915BDC-T1-E3 Si5915DC-T1-E3 Si5915DC-T1 30-Aug-07

    Untitled

    Abstract: No abstract text available
    Text: Si5915BDC Vishay Siliconix Dual P-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.070 at VGS = - 4.5 V 4a 0.086 at VGS = - 2.5 V 4a 0.145 at VGS = - 1.8 V 3.6 Qg (Typ.) 5 nC • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si5915BDC 2002/95/EC Si5915BDC-T1-E3 Si5915BDC-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    BS250KL

    Abstract: tsop6 marking 345 SUD50P08 SI3437 SUD19P06-60L MOSFET SUB75P03 tsop6 marking 443 Si5947DU Si1471DH SI1073X
    Text: P-Channel Power MOSFETs Selector Guide Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no


    Original     		PDF SC-75 SC-75A SC-89 BS250KL tsop6 marking 345 SUD50P08 SI3437 SUD19P06-60L MOSFET SUB75P03 tsop6 marking 443 Si5947DU Si1471DH SI1073X

    Diode SOT-23 marking 15d

    Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
    Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs


    Original     		PDF Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477