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    SI5513DC Price and Stock

    Vishay Siliconix SI5513DC-T1-E3

    MOSFET N/P-CH 20V 3.1A 1206-8
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    DigiKey SI5513DC-T1-E3 Digi-Reel 1
    • 1 $1.07
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    SI5513DC-T1-E3 Cut Tape
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    Vishay Siliconix SI5513DC-T1-GE3

    MOSFET N/P-CH 20V 3.1A 1206-8
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    DigiKey SI5513DC-T1-GE3 Reel
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    Vishay Intertechnologies SI5513DC

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    Bristol Electronics SI5513DC 10,777
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    Vishay Intertechnologies SI5513DC-T1-E3

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    Bristol Electronics SI5513DC-T1-E3 10,777
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    Quest Components SI5513DC-T1-E3 87
    • 1 $0.36
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    Vishay Intertechnologies SI5513DC-T1

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    Bristol Electronics SI5513DC-T1 10,777
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    Quest Components SI5513DC-T1 2,400
    • 1 $3.15
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    SI5513DC Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Si5513DC Vishay Intertechnology Complementary 20-V (D-S) MOSFET Original PDF
    SI5513DC Vishay Siliconix MOSFETs Original PDF
    Si5513DC SPICE Device Model Vishay Complementary 20-V (D-S) MOSFET Original PDF
    SI5513DC-T1 Vishay Intertechnology Complementary 20-V (D-S) MOSFET Original PDF
    SI5513DC-T1 Vishay Telefunken Original PDF
    SI5513DC-T1-E3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 20V 3.1A 1206-8 Original PDF
    SI5513DC-T1-E3 Vishay Telefunken Original PDF
    SI5513DC-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 20V 3.1A 1206-8 Original PDF

    SI5513DC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si5513DC

    Abstract: Si5513DC-T1-E3
    Text: Si5513DC Vishay Siliconix Complementary 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A) 0.075 at VGS = 4.5 V 4.2 0.134 at VGS = 2.5 V 3.1 0.155 at VGS = - 4.5 V - 2.9 0.260 at VGS = - 2.5 V - 2.2 • Halogen-free According to IEC 61249-2-21


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    PDF Si5513DC 2002/95/EC Si5513DC-T1-E3 Si5513DC-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si5513DC Vishay Siliconix Complementary 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A) 0.075 at VGS = 4.5 V 4.2 0.134 at VGS = 2.5 V 3.1 0.155 at VGS = - 4.5 V - 2.9 0.260 at VGS = - 2.5 V - 2.2 • Halogen-free According to IEC 61249-2-21


    Original
    PDF Si5513DC 2002/95/EC Si5513DC-T1-E3 Si5513DC-T1-GE3 11-Mar-11

    Si5513DC

    Abstract: No abstract text available
    Text: SPICE Device Model Si5513DC Vishay Siliconix Complementary 20-V D-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


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    PDF Si5513DC S-60074Rev. 23-Jan-06

    Untitled

    Abstract: No abstract text available
    Text: Si5513DC Vishay Siliconix Complementary 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) N Channel N-Channel 20 P Channel P-Channel - 20 rDS(on) (W) ID (A) 0.075 @ VGS = 4.5 V 4.2 0.134 @ VGS = 2.5 V 3.1 0.155 @ VGS = - 4.5 V - 2.9 0.260 @ VGS = - 2.5 V - 2.2 D1


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    PDF Si5513DC Si5513DC-T1 S-31263--Rev. 16-Jun-03

    Si5513DC

    Abstract: Si5513DC-T1-E3
    Text: Si5513DC Vishay Siliconix Complementary 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A) 0.075 at VGS = 4.5 V 4.2 0.134 at VGS = 2.5 V 3.1 0.155 at VGS = - 4.5 V - 2.9 0.260 at VGS = - 2.5 V - 2.2 • Halogen-free According to IEC 61249-2-21


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    PDF Si5513DC 2002/95/EC Si5513DC-T1-E3 Si5513DC-T1-GE3 18-Jul-08

    mosfet 3047

    Abstract: AN609 Si5513DC
    Text: Si5513DC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


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    PDF Si5513DC AN609 21-Jun-07 mosfet 3047

    Untitled

    Abstract: No abstract text available
    Text: Si5513DC Vishay Siliconix Complementary 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A) 0.075 at VGS = 4.5 V 4.2 0.134 at VGS = 2.5 V 3.1 0.155 at VGS = - 4.5 V - 2.9 0.260 at VGS = - 2.5 V - 2.2 • Halogen-free According to IEC 61249-2-21


    Original
    PDF Si5513DC 2002/95/EC Si5513DC-T1-E3 Si5513DC-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Si5513DC

    Abstract: Si5513DC-T1
    Text: Si5513DC Vishay Siliconix Complementary 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) N Channel N-Channel 20 P Channel P-Channel - 20 rDS(on) (W) ID (A) 0.075 @ VGS = 4.5 V 4.2 0.134 @ VGS = 2.5 V 3.1 0.155 @ VGS = - 4.5 V - 2.9 0.260 @ VGS = - 2.5 V - 2.2 D1


    Original
    PDF Si5513DC Si5513DC-T1 S-31263--Rev. 16-Jun-03

    Si5513DC

    Abstract: No abstract text available
    Text: SPICE Device Model Si5513DC Vishay Siliconix Complementary 20-V D-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    PDF Si5513DC 16-Apr-01

    Si5513DC

    Abstract: Si5513DC-T1
    Text: Si5513DC Vishay Siliconix Complementary 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) N Channel N-Channel 20 P Channel P-Channel -20 20 rDS(on) (Ω) ID (A) 0.075 @ VGS = 4.5 V 4.2 0.134 @ VGS = 2.5 V 3.1 0.155 @ VGS = -4.5 V -2.9 0.260 @ VGS = -2.5 V -2.2


    Original
    PDF Si5513DC Si5513DC-T1 S-21251--Rev. 05-Aug-02

    Si5513DC

    Abstract: Si5513DC-T1
    Text: Si5513DC Vishay Siliconix Complementary 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) N Channel N-Channel 20 P Channel P-Channel −20 20 rDS(on) (W) ID (A) 0.075 @ VGS = 4.5 V 4.2 0.134 @ VGS = 2.5 V 3.1 0.155 @ VGS = −4.5 V −2.9 0.260 @ VGS = −2.5 V −2.2


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    PDF Si5513DC Si5513DC-T1 Si5513DC-T1--E3 08-Apr-05

    mosfet vgs 5v

    Abstract: Si5513DC
    Text: SPICE Device Model Si5513DC Complementary 20-V D-S MOSFET Characteristics • N- and P- channel Vertical DMOS • Macro-Model (Sub-circuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range


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    PDF Si5513DC mosfet vgs 5v

    Untitled

    Abstract: No abstract text available
    Text: Si5513DC Vishay Siliconix Complementary 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A) 0.075 at VGS = 4.5 V 4.2 0.134 at VGS = 2.5 V 3.1 0.155 at VGS = - 4.5 V - 2.9 0.260 at VGS = - 2.5 V - 2.2 • Halogen-free According to IEC 61249-2-21


    Original
    PDF Si5513DC 2002/95/EC Si5513DC-T1-E3 Si5513DC-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si5513CDC

    Abstract: transistor mosfet n-ch drain current Si5513CDC-T1-E3 Si5513DC Si5513DC-T1 Si5513DC-T1-E3
    Text: Specification Comparison Vishay Siliconix Si5513CDC vs. Si5513DC Description: Package: Pin Out: N- and P-Channel 20-V D-S MOSFET 1206-8 ChipFET Identical Part Number Replacements: Si5513CDC-T1-E3 replaces Si5513DC-T1 Si5513CDC-T1-E3 replaces Si5513DC-T1-E3


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    PDF Si5513CDC Si5513DC Si5513CDC-T1-E3 Si5513DC-T1 Si5513DC-T1-E3 04-Aug-08 transistor mosfet n-ch drain current

    42138

    Abstract: Si5513DC Si5513DC-T1
    Text: Si5513DC Vishay Siliconix Complementary 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) N Channel N-Channel 20 P Channel P-Channel −20 20 rDS(on) (W) ID (A) 0.075 @ VGS = 4.5 V 4.2 0.134 @ VGS = 2.5 V 3.1 0.155 @ VGS = −4.5 V −2.9 0.260 @ VGS = −2.5 V −2.2


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    PDF Si5513DC Si5513DC-T1 Si5513DC-T1--E3 18-Jul-08 42138

    42138

    Abstract: Si5513DC Si5513DC-T1 VISHAY diode MARKING EB
    Text: Si5513DC Vishay Siliconix Complementary 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) N Channel N-Channel 20 P Channel P-Channel −20 20 rDS(on) (W) ID (A) 0.075 @ VGS = 4.5 V 4.2 0.134 @ VGS = 2.5 V 3.1 0.155 @ VGS = −4.5 V −2.9 0.260 @ VGS = −2.5 V −2.2


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    PDF Si5513DC Si5513DC-T1 Si5513DC-T1--E3 S-42138--Rev. 15-Nov-04 42138 VISHAY diode MARKING EB

    Si5513DC

    Abstract: S01419
    Text: Si5513DC Vishay Siliconix New Product Complementary 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel -20 rDS(on) (W) ID (A) 0.075 @ VGS = 4.5 V 4.2 0.134 @ VGS = 2.5 V 3.1 0.155 @ VGS = -4.5 V -2.9 0.260 @ VGS = -2.5 V -2.2 D1 1206-8 ChipFET


    Original
    PDF Si5513DC S-01419--Rev. 03-Jul-00 S01419

    Untitled

    Abstract: No abstract text available
    Text: Si5513DC Vishay Siliconix Complementary 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) N Channel N-Channel 20 P Channel P-Channel −20 20 rDS(on) (W) ID (A) 0.075 @ VGS = 4.5 V 4.2 0.134 @ VGS = 2.5 V 3.1 0.155 @ VGS = −4.5 V −2.9 0.260 @ VGS = −2.5 V −2.2


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    PDF Si5513DC Si5513DC-T1 Si5513DC-T1--E3 S-41167--Rev. 14-Jun-04

    230V ac to 5V dc usb charger circuit

    Abstract: No abstract text available
    Text: Features • DC to DC Step Down 1.2 A, 0.9V Dynamically Adjustable to 0.87V/1.1V/1.2V • DC to DC step Down 1.2 A, 1.2V (Dynamically Adjustable to 1.0V/1.1V/1.3V) or 1.75V (Dynamically Adjustable 1.65V/1.70V/1.80V) • DC to DC Step Down 1.2 A, 1.8V (Dynamically Adjustable to 1.70V/1.75V/1.85V) or


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    PDF 2742Bâ 230V ac to 5V dc usb charger circuit

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


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    PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    BS250KL-TR1-E3

    Abstract: si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3
    Text: NEW! Siliconix MOSFETs Multiple pinout configurations available, see Digi-Key website for data sheet. Fig. Package VDSS V ID (A) RDS(on) (Ω) Digi-Key Part No. Cut Tape Price Each 1 25 100 Tape and Reel ‡ Qty. Pricing Vishay Part No. Fig. 1 — 1206-8


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    PDF SI3865BDV-T1-E3CT-ND SI4720CY-T1-E3CT-ND SI6924AEDQ-T1-E3CT-ND SI1040X-T1-E3TR-ND SI1865DL-T1-E3TR-ND SI1869DH-T1-E3TR-ND SI3861BDV-T1-E3TR-ND SI3865BDV-T1-E3TR-ND SI4720CY-T1-E3TR-ND SI6924AEDQ-T1-E3TR-ND BS250KL-TR1-E3 si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3

    SBS 15 battery

    Abstract: 24v charger LTC4100 piezoelectric circuit charger design ideas LTC4101 SI5513DC SIA811DJ charge 6v battery ac to dc 5v 2a charger
    Text: DESIGN IDEAS L Smart Battery Charger for Battery Backup Introduction The most common power source used for backup power is a battery. In a backup power system it is important to know if the battery is ready and reliable at all times by constantly monitoring


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    PDF LTC4101 LTC4101 SBS 15 battery 24v charger LTC4100 piezoelectric circuit charger design ideas SI5513DC SIA811DJ charge 6v battery ac to dc 5v 2a charger

    Arduino Mega2560

    Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
    Text: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM


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    PDF CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l

    230V ac to 5V dc usb charger circuit

    Abstract: ETSI ts 102.221 ETSI ts 102.221 V4.2.0 2742B schematic diagram 110v dc charger 103JT-025 PXA255 56H05C AT73C203 2742B-PMGMT-03
    Text: Features • DC to DC Step Down 1.2 A, 0.9V Dynamically Adjustable to 0.87V/1.1V/1.2V • DC to DC step Down 1.2 A, 1.2V (Dynamically Adjustable to 1.0V/1.1V/1.3V) or 1.75V (Dynamically Adjustable 1.65V/1.70V/1.80V) • DC to DC Step Down 1.2 A, 1.8V (Dynamically Adjustable to 1.70V/1.75V/1.85V) or


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    PDF 2742B 230V ac to 5V dc usb charger circuit ETSI ts 102.221 ETSI ts 102.221 V4.2.0 schematic diagram 110v dc charger 103JT-025 PXA255 56H05C AT73C203 2742B-PMGMT-03