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si4714 Abstract: No abstract text available Text: SPICE Device Model Si4714DY www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET with Shottky Diode DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	PDF	Si4714DY 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si4714
si4714 Abstract: No abstract text available Text: New Product Si4714DY Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0135 at VGS = 10 V 13.6 0.0175 at VGS = 4.5 V 12.0 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • SkyFET Monolithic TrenchFET Gen. 	Original	PDF	Si4714DY 2002/95/EC Si4714DY-T1-GE3 11-Mar-11 si4714
Untitled Abstract: No abstract text available Text: New Product Si4714DY Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0135 at VGS = 10 V 13.6 0.0175 at VGS = 4.5 V 12.0 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • SkyFET Monolithic TrenchFET Gen. 	Original	PDF	Si4714DY 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: New Product Si4714DY Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0135 at VGS = 10 V 13.6 0.0175 at VGS = 4.5 V 12.0 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • SkyFET Monolithic TrenchFET Gen. 	Original	PDF	Si4714DY 2002/95/EC Si4714DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Untitled Abstract: No abstract text available Text: New Product Si4714DY Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0135 at VGS = 10 V 13.6 0.0175 at VGS = 4.5 V 12.0 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • SkyFET Monolithic TrenchFET Gen. 	Original	PDF	Si4714DY 2002/95/EC Si4714DY-T1-GE3 11-Mar-11
si4776 Abstract: No abstract text available Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - Save Space, Increase Performance AND TEC I INNOVAT O L OGY SkyFET N HN POWER MOSFETs O 19 62-2012 Integrated MOSFET and Schottky Diode Solution KEY BENEFITS • • • • Increases efficiency for DC/DC converter applications	Original	PDF	SiR788DP Si7774DP Si7748DP Si7772DP Si4628DY Si4752DY Si4774DY Si4712DY Si4714DY Si4776DY si4776
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	PDF	Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836