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    SI4136DY Search Results

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    SI4136DY Price and Stock

    Vishay Siliconix SI4136DY-T1-GE3

    MOSFET N-CH 20V 46A 8SO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4136DY-T1-GE3 Cut Tape 3,189 1
    • 1 $2.17
    • 10 $1.389
    • 100 $2.17
    • 1000 $0.68962
    • 10000 $0.68962
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    SI4136DY-T1-GE3 Digi-Reel 3,189 1
    • 1 $2.17
    • 10 $1.389
    • 100 $2.17
    • 1000 $0.68962
    • 10000 $0.68962
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    SI4136DY-T1-GE3 Reel 2,500 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.5875
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    ES Components SI4136DY-T1-GE3
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    Vishay Intertechnologies SI4136DY-T1-GE3

    N-CHANNEL 20-V (D-S) MOSFET - Tape and Reel (Alt: SI4136DY-T1-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SI4136DY-T1-GE3 Reel 5,000 17 Weeks 2,500
    • 1 -
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    • 10000 $0.5875
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    Mouser Electronics SI4136DY-T1-GE3 18,734
    • 1 $1.57
    • 10 $1.1
    • 100 $0.809
    • 1000 $0.646
    • 10000 $0.587
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    Verical SI4136DY-T1-GE3 99 10
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    • 10 $0.6027
    • 100 $0.6027
    • 1000 $0.6027
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    Arrow Electronics SI4136DY-T1-GE3 Cut Strips 99 17 Weeks 1
    • 1 $0.9559
    • 10 $0.8137
    • 100 $0.6027
    • 1000 $0.6027
    • 10000 $0.6027
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    Newark SI4136DY-T1-GE3 Reel 2,500
    • 1 $0.588
    • 10 $0.588
    • 100 $0.588
    • 1000 $0.588
    • 10000 $0.588
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    SI4136DY-T1-GE3 Bulk 1
    • 1 $1.6
    • 10 $1.35
    • 100 $1.07
    • 1000 $0.994
    • 10000 $0.994
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    TTI SI4136DY-T1-GE3 Reel 5,000 2,500
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    • 10000 $0.588
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    EBV Elektronik SI4136DY-T1-GE3 18 Weeks 2,500
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    SI4136DY Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI4136DY-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 46A 8-SOIC Original PDF

    SI4136DY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4136DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.002 at VGS = 10 V 46 0.0025 at VGS = 4.5 V 41 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested


    Original     		PDF Si4136DY Si4136DY-T1-GE3 11-Mar-11

    1.6946

    Abstract: 40559 mosfet AN609
    Text: Si4136DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,


    Original     		PDF Si4136DY AN609, 06-Feb-09 1.6946 40559 mosfet AN609

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si4136DY www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si4136DY 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4136DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.002 at VGS = 10 V 46 0.0025 at VGS = 4.5 V 41 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested


    Original     		PDF Si4136DY Si4136DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4136DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.002 at VGS = 10 V 46 0.0025 at VGS = 4.5 V 41 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested


    Original     		PDF Si4136DY Si4136DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4136DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.002 at VGS = 10 V 46 0.0025 at VGS = 4.5 V 41 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested


    Original     		PDF Si4136DY Si4136DY-T1-GE3 11-Mar-11

    31BC30

    Abstract: No abstract text available
    Text: New Product Si4136DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.002 at VGS = 10 V 46 0.0025 at VGS = 4.5 V 41 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested


    Original     		PDF Si4136DY Si4136DY-T1-GE3 18-Jul-08 31BC30

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4136DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.002 at VGS = 10 V 46 0.0025 at VGS = 4.5 V 41 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested


    Original     		PDF Si4136DY Si4136DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    v 4520

    Abstract: No abstract text available
    Text: SPICE Device Model Si4136DY Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original     		PDF Si4136DY 18-Jul-08 v 4520

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    Untitled

    Abstract: No abstract text available
    Text: V i s h ay I n tertec h n olo g y, I n c . Power MOSFETs M O S F ET s Tre nchFET G e n III Key features and Benefits Low conduction and switching losses enable increased efficiency and reduced power consumption • Record-breaking maximum on-resistance at VGS = 4.5 V rating


    Original     		PDF VMN-PT0105-1007

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836

    Diode SOT-23 marking 15d

    Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
    Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs


    Original     		PDF Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477