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    SUP65P06 Search Results

    SUP65P06 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SUP65P06-20 Temic Semiconductors P-Channel Enhancement-Mode Transistors Original PDF
    SUP65P06-20 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    SUP65P06-20 Vishay Intertechnology P-Channel 60-V (D-S), 175°C MOSFET Original PDF
    SUP65P06-20-E3 Vishay Transistor Mosfet P-CH 60V 65A 3TO-220AB Original PDF
    SUP65P06-20 SPICE Device Model Vishay P-Channel 60x-V (D-S), 175°C MOSFET Original PDF

    SUP65P06 Datasheets Context Search

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    sup65p06

    Abstract: No abstract text available
    Text: SUP/SUB65P06-20 Vishay Siliconix P-Channel 60-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) –60 0.020 –65a TO-220AB S TO-263 G DRAIN connected to TAB G G D S D S Top View Top View D SUB65P06-20 SUP65P06-20 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF SUP/SUB65P06-20 O-220AB O-263 SUB65P06-20 SUP65P06-20 O-220AB O-263) S-57253--Rev. 24-Feb-98 sup65p06

    sup65p06

    Abstract: 0244 9117 AN609 SUP65P06-20
    Text: SUP65P06-20_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF SUP65P06-20 AN609 03-Jan-08 sup65p06 0244 9117

    SUB65P06-20

    Abstract: SUP65P06-20
    Text: SUP/SUB65P06-20 Vishay Siliconix P-Channel 60-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) –60 0.020 –65a TO-220AB S TO-263 G DRAIN connected to TAB G G D S D S Top View Top View D SUB65P06-20 SUP65P06-20 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF SUP/SUB65P06-20 O-220AB O-263 SUB65P06-20 SUP65P06-20 O-263 O-220AB O-263) SUB65P06-20 SUP65P06-20

    sup65p06

    Abstract: SUB65P06-20 SUP65P06-20
    Text: SUP/SUB65P06-20 Vishay Siliconix P-Channel 60-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) –60 0.020 –65a TO-220AB S TO-263 G DRAIN connected to TAB G G D S D S Top View Top View D SUB65P06-20 SUP65P06-20 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF SUP/SUB65P06-20 O-220AB O-263 SUB65P06-20 SUP65P06-20 O-220AB O-263) 18-Jul-08 sup65p06 SUB65P06-20 SUP65P06-20

    sub65p06-20

    Abstract: SUB65P06 SUP65P06
    Text: SUP/SUB65P06-20 P-Channel Enhancement-Mode Transistors Product Summary V BR DSS (V) rDS(on) (W) ID (A) –60 0.020 –65a S TOĆ220AB TOĆ263 G DRAIN connected to TAB G D S Top View GD S D SUB65P06Ć20 Top View PĆChannel MOSFET SUP65P06Ć20 Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)


    Original     		PDF SUP/SUB65P06-20 O220AB SUB65P0620 SUP65P0620 O-220AB O-263) O-263 P-39628--Rev. 28-Dec-94 sub65p06-20 SUB65P06 SUP65P06

    SUB65P06-20

    Abstract: SUP65P06-20
    Text: SUP/SUB65P06-20 Vishay Siliconix P-Channel 60-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) –60 0.020 –65a TO-220AB S TO-263 G DRAIN connected to TAB G G D S D S Top View Top View D SUB65P06-20 SUP65P06-20 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF SUP/SUB65P06-20 O-220AB O-263 SUB65P06-20 SUP65P06-20 O-220AB O-263) 08-Apr-05 SUB65P06-20 SUP65P06-20

    S0511

    Abstract: sup65p06 SUB65P06-20 SUP65P06-20 sub65p06
    Text: SUP/SUB65P06-20 Vishay Siliconix P-Channel 60-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) –60 0.020 –65a TO-220AB S TO-263 G DRAIN connected to TAB G G D S D S Top View Top View D SUB65P06-20 SUP65P06-20 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF SUP/SUB65P06-20 O-220AB O-263 SUB65P06-20 SUP65P06-20 O-220AB O-263) S-05111--Rev. 10-Dec-01 S0511 sup65p06 SUB65P06-20 SUP65P06-20 sub65p06

    SUB65P06

    Abstract: SUP65P06
    Text: SUP/SUB65P06-20 P-Channel Enhancement-Mode Transistors Product Summary V BR DSS (V) rDS(on) (W) ID (A) –60 0.020 –65a S TOĆ220AB TOĆ263 G DRAIN connected to TAB G D S Top View GD S D SUB65P06Ć20 Top View PĆChannel MOSFET SUP65P06Ć20 Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)


    Original     		PDF SUP/SUB65P06-20 O220AB SUB65P0620 SUP65P0620 O-220AB O-263) O-263 P-39628--Rev. 28-Dec-94 SUB65P06 SUP65P06

    SUB65P06-20

    Abstract: No abstract text available
    Text: SUP/SUB65P06-20 Siliconix P-Channel 60-V D-S , 175_C MOSFET Product Summary V(BR)DSS (V) rDS(on) (W) ID (A) –60 0.020 –65a TOĆ220AB S TOĆ263 G DRAIN connected to TAB GD S G D S Top View Top View D PĆChannel MOSFET SUB65P06Ć20 SUP65P06Ć20 Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)


    Original     		PDF SUP/SUB65P06-20 O220AB SUP65P0620 SUB65P0620 O-220AB O-263) O-263 S-57253--Rev. 24-Feb-98 SUB65P06-20

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    VN10KLS

    Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
    Text: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated


    Original     		PDF Si4831DY Si4833DY Si4852DY Si4816DY 10Single VN50300L VN50300T OT-23 VN66AFD VN10KLS mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    SUB65P06

    Abstract: SUP65P06
    Text: SUP/SUB65P06Ć20 Siliconix PĆChannel EnhancementĆMode Transistors 175_C Maximum Junction Temperature Product Summary V BR DSS (V) rDS(on) (W) ID (A) -60 0.020 -65a S TOĆ220AB TOĆ263 G DRAIN connected to TAB G D S Top View GD S D SUB65P06Ć20 Top View PĆChannel MOSFET


    Original     		PDF SUP/SUB65P0620 O220AB SUB65P0620 SUP65P0620 O220AB P39628Rev. SUB65P06 SUP65P06

    TEMIC K153P

    Abstract: TSHF5471 tfmw5380 dn1328 tdsr5156 dn904 TDSR5153 HS0038 IR sensor TLVD4900 TCDF1910
    Text: Quality and Reliability Report 1997 TEMIC Semiconductors 07.97 Table of Contents TEMIC Quality Policy .1 Quality System .2


    Original     		PDF WN1053 WN1087-18R WN1087-TR1 WN1090 WN1125 WN1142 WN1158-TA WN1165-TR1 WN1170 WN934 TEMIC K153P TSHF5471 tfmw5380 dn1328 tdsr5156 dn904 TDSR5153 HS0038 IR sensor TLVD4900 TCDF1910

    Untitled

    Abstract: No abstract text available
    Text: Tem ic SUP/SUB65P06-20 S em i co n d u c t or s P-Channel Enhancement-Mode Transistors Product Summary V BR DSS (V) Id (A) r DS(on) ( ^ ) 0.020 -6 0 -6 5 a T0-220AB o TO-263 < 1 n DRAIN connected to TAB G D S Top View GD S Ô D SUB65P06-20 Top View SUP65P06-20


    OCR Scan     		PDF SUP/SUB65P06-20 T0-220AB O-263 SUP65P06-20 SUB65P06-20 T0-220AB O-263) O-263 P-39628--Rev. 28-Dec-94

    T0252

    Abstract: SUP75NO8-I0 SUP60N06-18 D-PAK D2PAK SMP40P06 T0263 70220AB SMD10P05 T0-251
    Text: Tem ic S e m i c o n d u c t o r s Power MOSFETs £ ' - ^ « ». J " V* , Tt i * ï ^ f I -4 .,iV " j V- .1 ,1 • r ÿ r / ï l / 'V • ; v i N-Channel Devices SMB60N03-10L 0.010 60 125 D2PAK T0263 SMP60N03-10L 0.010 60 105 TO220AB 0.03 30 50 DPAK (T0252)


    OCR Scan     		PDF SMB60N03-10L SMP60N03-10L SMD30N03-30L SMU30N03-30L SUD30N03-30 SUD50N03-10 SUB75N05-06 SUP75N05-06 SUD45N05-20L SMD25N05-45L T0252 SUP75NO8-I0 SUP60N06-18 D-PAK D2PAK SMP40P06 T0263 70220AB SMD10P05 T0-251