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Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: SUM100N12–14L New Product Vishay Siliconix N-Channel 125-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.0144 @ VGS = 10 V 100 0.0154 @ VGS = 4.5 V 96 VDS (V) 125 D TrenchFETr Power MOSFET D 100% Rg Tested Qg (Typ) APPLICATIONS 67 nC COMPLIANT	Original	SUM100N12â O-263 08-Apr-05	PDF
sum100n12 Abstract: No abstract text available Text: SUM100N12-14L Vishay Siliconix New Product N-Channel 125-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.0144 @ VGS = 10 V 100 0.0154 @ VGS = 4.5 V 96 VDS (V) 125 D TrenchFETr Power MOSFET D 100% Rg Tested Qg (Typ) APPLICATIONS 67 nC COMPLIANT	Original	SUM100N12-14L O-263 SUM100N12-14L--E3 S-51010--Rev. 23-May-05 sum100n12	PDF
73400 Abstract: No abstract text available Text: SUM100N12–14L New Product Vishay Siliconix N-Channel 125-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.0144 @ VGS = 10 V 100 0.0154 @ VGS = 4.5 V 96 VDS (V) 125 D TrenchFETr Power MOSFET D 100% Rg Tested Qg (Typ) APPLICATIONS 67 nC COMPLIANT	Original	SUM100N12 O-263 83ang 52229--Rev. 24-Oct-05 73400	PDF
SUM100N12-14L Abstract: No abstract text available Text: SPICE Device Model SUM100N12-14L Vishay Siliconix N-Channel 125-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	SUM100N12-14L 18-Jul-08 SUM100N12-14L	PDF
DSA00384671 Abstract: No abstract text available Text: SUM100N12–14L New Product Vishay Siliconix N-Channel 125-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.0144 @ VGS = 10 V 100 0.0154 @ VGS = 4.5 V 96 VDS (V) 125 D TrenchFETr Power MOSFET D 100% Rg Tested Qg (Typ) APPLICATIONS 67 nC COMPLIANT	Original	SUM100N12 O-263 83alectual 18-Jul-08 DSA00384671	PDF
Untitled Abstract: No abstract text available Text: SUM100N12–14L New Product Vishay Siliconix N-Channel 125-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.0144 @ VGS = 10 V 100 0.0154 @ VGS = 4.5 V 96 VDS (V) 125 D TrenchFETr Power MOSFET D 100% Rg Tested Qg (Typ) APPLICATIONS 67 nC COMPLIANT	Original	SUM100N12 O-263 08-Apr-05	PDF
sum45n25 Abstract: PPAP PPAP for thermistor 0034D sud*45N05-20L SQ7414EN ceramic disc aec capacitors siliconix an80 SUP57N20-33 SUP75N06-08 Text: For Automotive Applications w w w. v i s h a y. c o m SELECTOR GuIdE Power MoSFeTs P O w E R M O S F E Ts V I S H AY I N T E R T E C H N O L O G Y, I N C . SeMICoNDUCTorS reCTIFIerS Schottky single, dual Standard, Fast, and ultra-Fast Recovery (single, dual)	Original	VMN-SG2117-0705 sum45n25 PPAP PPAP for thermistor 0034D sud*45N05-20L SQ7414EN ceramic disc aec capacitors siliconix an80 SUP57N20-33 SUP75N06-08	PDF
q406 transistor Abstract: SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS Text: Power MOSFETS for DC/DC Applications Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no	Original	SiP41109 SiP41110 SiP41111 75/2A q406 transistor SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS	PDF