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    STMicroelectronics STD12N05

    12 A, 50 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
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    STD12N05 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    STD12N05 STMicroelectronics OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN Original PDF
    STD12N05 STMicroelectronics OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN Original PDF
    STD12N05 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    STD12N05-1 STMicroelectronics N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR Original PDF
    STD12N05L STMicroelectronics OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN Original PDF
    STD12N05L STMicroelectronics OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN Original PDF
    STD12N05L Toshiba Power MOSFETs Cross Reference Guide Original PDF
    STD12N05LT4 STMicroelectronics N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR Original PDF
    STD12N05T4 STMicroelectronics N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR Original PDF

    STD12N05 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    STD12N05L

    Abstract: STD12N06L
    Text: STD12N05L STD12N06L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR V DSS R DS on ID STD12N05L TYPE 50 V < 0.15 Ω 12 A STD12N06L 60 V < 0.15 Ω 12 A • ■ ■ ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.115 Ω AVALANCHE RUGGED TECHNOLOGY


    Original     		PDF STD12N05L STD12N06L 100oC 175oC O-251) O-252) O-251 O-252 STD12N05L STD12N06L

    STD12N05

    Abstract: STD12N06
    Text: STD12N05 STD12N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS R DS on ID STD12N05 50 V < 0.15 Ω 12 A STD12N06 60 V < 0.15 Ω 12 A TYPICAL RDS(on) = 0.1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original     		PDF STD12N05 STD12N06 100oC 175oC O-251) O-252) O-251 O-252 STD12N05 STD12N06

    STD12N05

    Abstract: STD12N06
    Text: STD12N05 STD12N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS R DS on ID STD12N05 50 V < 0.15 Ω 12 A STD12N06 60 V < 0.15 Ω 12 A • ■ ■ ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    Original     		PDF STD12N05 STD12N06 100oC 175oC O-251) O-252) O-251 O-252 STD12N05 STD12N06

    STD12N05

    Abstract: STD12N06
    Text: STD12N05 STD12N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS R DS on ID STD12N05 50 V < 0.15 Ω 12 A STD12N06 60 V < 0.15 Ω 12 A • ■ ■ ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    Original     		PDF STD12N05 STD12N06 100oC 175oC O-251) O-252) O-251 O-252 STD12N05 STD12N06

    diode b6 k 450

    Abstract: STD12N05 STD12N06
    Text: STD12N05 STD12N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS R DS on ID STD12N05 50 V < 0.15 Ω 12 A STD12N06 60 V < 0.15 Ω 12 A • ■ ■ ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    Original     		PDF STD12N05 STD12N06 100oC 175oC O-251) O-252) O-251 O-252 diode b6 k 450 STD12N05 STD12N06

    STD12N05L

    Abstract: STD12N06L
    Text: STD12N05L STD12N06L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE VDSS R DS on ID STD12N05L 50 V < 0.15 Ω 12 A STD12N06L 60 V < 0.15 Ω 12 A • ■ ■ ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.115 Ω AVALANCHE RUGGED TECHNOLOGY


    Original     		PDF STD12N05L STD12N06L 100oC 175oC O-251) O-252) O-251 O-252 STD12N05L STD12N06L

    STD12N05L

    Abstract: STD12N06L
    Text: STD12N05L STD12N06L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE V DSS R DS on ID STD12N05L 50 V < 0.15 Ω 12 A STD12N06L 60 V < 0.15 Ω 12 A • ■ ■ ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.115 Ω AVALANCHE RUGGED TECHNOLOGY


    Original     		PDF STD12N05L STD12N06L 100oC 175oC O-251) O-252) O-251 O-252 STD12N05L STD12N06L

    ste30na50

    Abstract: STP3N60FI STE45N50 STHV82 stk2n50 ste24n90 STB55N06 ste38na50 STP55NE06FP STB40N03L-20
    Text: SOT-223 VDSS RDS on max (V) (Ω) 30 0.05 0.06 0.12 0.12 0.12 0.27 0.45 1.50 20.0 60 100 200 800 Type STN4NE03L STN4NE03 STN3NE06 STN3NE06L STN3NE06L STN2N10 STN2NE10L ✠ STN1N20 STN1NB80 ✠ ID(cont) DEVICES (A) REPLACED 4.0 4.0 3.0 3.0 3.0 2.0 2.0 1.0


    Original     		PDF OT-223 STN4NE03L STN4NE03 STN3NE06 STN3NE06L STN2N10 STN2NE10L STN1N20 STN1NB80 ste30na50 STP3N60FI STE45N50 STHV82 stk2n50 ste24n90 STB55N06 ste38na50 STP55NE06FP STB40N03L-20

    std2n52

    Abstract: stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent
    Text: POWER MOSFETS CROSS REFERENCE Industry standard 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1164 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205 2SK1231 2SK1232


    Original     		PDF 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 std2n52 stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent

    IRF540 complementary

    Abstract: IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR
    Text: Sales type RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L RFP25N05 RFP14N05 HUF75344P3 HUF75344S3S HUF75345S3S HUF75345G3 HUF75343S3S HUF75307D3S HUF75344G3 HUF75345P3 HUF75343P3 HUF5343G3 HUF75321P3 HUF75329P3


    Original     		PDF RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L IRF540 complementary IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    SSH6N80

    Abstract: rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50
    Text: Sales type BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530 IRF540 IRF620 IRF630 IRF640 IRF730 IRF740 IRF820 IRF830 IRF840 IRFBC30 IRFBC40 IRFZ40 MTP3055E STB10NA40 STB10NB20 STB10NB50 STB11NB40 STB15N25 STB16NB25 STB18N20 STB19NB20 STB30N10 STB36NE03L


    Original     		PDF BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530 IRF540 SSH6N80 rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50

    220v AC voltage stabilizer schematic diagram

    Abstract: 1000w inverter PURE SINE WAVE schematic diagram philips ecg master replacement guide ecg semiconductors master replacement guide diac 3202 bta16 6008 csr1000 mini Audio transformer 200k to 1k ct input jrc 2904 d BTA12 6008
    Text: Prices Guaranteed Until July 31,1998 Catalog 594 Search Products Suppliers New Products CD Only Products How to Order Web Site Help Select an Option Main Menu New Products Help See pages 194 and 196 for new Trimmer Potentiometers. See pages 41 and 42 for new EEPROMS.


    Original     		PDF Batte48 220v AC voltage stabilizer schematic diagram 1000w inverter PURE SINE WAVE schematic diagram philips ecg master replacement guide ecg semiconductors master replacement guide diac 3202 bta16 6008 csr1000 mini Audio transformer 200k to 1k ct input jrc 2904 d BTA12 6008

    STP3N60FI

    Abstract: IRF540 complementary IRF640 complementary ste38na50 STE45N50 IRF630 complementary STP6NA80FP STD1NB60 IRF730 complementary ste24n90
    Text: May ‘99 TO-220 VDSS RDS on max (V) (Ω) 30 0.004 0.006 0.01 0.012 0.0155 0.02 0.022 0.022 0.045 0.05 0.008 0.015 0.028 0.04 0.055 0.07 0.1 0.006 0.006 0.01 STP80NF03L-04 STP80NE03L-06 STP60NE03L-10 STP60NE03L-12 STP3015L STP40NE03L-20 STP40NF03L ✠ STP3020L


    Original     		PDF O-220 STP80NF03L-04 STP80NE03L-06 STP60NE03L-10 STP60NE03L-12 STP3015L STP40NE03L-20 STP40NF03L STP3020L STP30NE03L STP3N60FI IRF540 complementary IRF640 complementary ste38na50 STE45N50 IRF630 complementary STP6NA80FP STD1NB60 IRF730 complementary ste24n90

    12n06

    Abstract: No abstract text available
    Text: ¿ 5 S G S -T H O M S O N ¡m e ra « 7 S T D 12N05 S T D 12N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E V dss STD12N05 50 V STD12N06 60 V R DS on Id a < 0.15 a 12 A < 0.15 12 A • TYPICAL RDS(on) = 0.1 Q . . AVALANCHE RUGGED TECHNOLOGY


    OCR Scan     		PDF 12N05 12N06 STD12N05 STD12N06 O-251) O-252) O-251 O-252 STD12N05/STD12N06 12n06

    Untitled

    Abstract: No abstract text available
    Text: ¿ 5 SGS-THOMSON ¡Hiera « 7 STD12N05L STD12N06L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYP E V dss STD12N05L 50 V STD12N06L 60 V RüS on Id a < 0.15 a 12 A < 0.15 12 A . TYPICAL RDs(on) = 0.115 Q . . AVALANCHE RUGGED TECHNOLOGY


    OCR Scan     		PDF STD12N05L STD12N06L O-251) O-252) O-251 O-252 STD12N05L/STD12N06L

    2N06

    Abstract: 2N05 D12N05
    Text: *57 s td i 2N05 SGS-THOMSON i L i O M K I S T D 1 2 N 0 6 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V dss R DS on Id STD12N05 50 V < 0.15 a 12 A STD12N06 60 V < 0.15 ß 12 A • . . ■ ■ . ■ ■ TYPICAL RDS(on) = 0.1 £2 AVALANCHE RUGGED TECHNOLOGY


    OCR Scan     		PDF STD12N05 STD12N06 O-251) O-252) O-251 O-252 2N06 2N05 D12N05

    TDA0161 equivalent

    Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
    Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:


    OCR Scan     		PDF

    2N06L

    Abstract: 2N06L 11 12N06L 2N06L 13 mp10 D12N06L 2N06L mos 12N05L
    Text: *57 S G S -T H O M S O N ilLHCTIIMDe TYPE 2Nosl STD12N06L s t d i N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR R DS on Id S T D 12N05L V 50 V < 0.15 a 12 A S T D 12N06L 60 V < 0.15 £2 12 A dss • T Y P IC A L R DS(on) = 0.115 £1


    OCR Scan     		PDF STD12N06L 12N05L 12N06L 2N06L 2N06L 11 12N06L 2N06L 13 mp10 D12N06L 2N06L mos