SGSD00031 Search Results

SGSD00031 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SGSD00031		Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)		Short Form	PDF

SGSD00031 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
SGSD00030 Abstract: transistor TE 901 equivalent Text: • _ / = ^ 7 7 ^ 5 3 7 ooaw a T S G S -T H O M S O N # Q f f ln o fô m iC T « ! g ■ S G ^ T '3 3 ' Z . 0 _ S D 0 0 0 3 0 /3 1 S G S-THOMSON 3QE /3 1 F I ] HIGH VOLTAGE, HIGH POWER, FAST SWITCHING DESC RIPTIO N The SGSD00030.SGSD00031 and SGSD00031 FI	OCR Scan	SGSD00030 SGSD00031 O-218 ISOWATT218 500ms transistor TE 901 equivalent	PDF
D100E Abstract: ic uc3842 BUV48 SE sgsd00031 SGSD00039 uc3842 application 600V BU508 BU810 Text: / S T SGS-THOMSON [M «m i g1TIMlM(gS APPLICATION NOTE HIGH VOLTAGE TRANSISTORS WITH POWER MOS EMITTER SWITCHING INTRODUCTION This paper summarizes the results of an investi gation carried out on power devices with both MOS and BIPOLAR parts working together in the same	OCR Scan	SGSP321, SGSP352 BUV48, BU508A SGSD00035 SGSD00039 SGSD00031, BU810 D100E ic uc3842 BUV48 SE sgsd00031 uc3842 application 600V BU508	PDF
mje520 Abstract: SGS1F444 SGSD00030 e13008 BUT23 2m3771 BUT62 BUW42AP 2n5337 BUW32AP Text: S E L E C T IO N G U ID E B Y P A C K A G E GENERAL PURPOSE TRANSISTO RS SO T-32 P 4 Complemen hFE«* 'c A VCE (V) “CEsat » 'c (A) (V) BD434 MJE210 MJE370 BD436 2N4918 2N5193 50 70 25 50 30 25 2.00 0.50 1.00 2.00 0.50 1.50 1.0 1.0 1.0 1.0 1.0 2.0 0.50	OCR Scan	BD433 MJE200 MJE520 BD435 2N4921 2IM5190 2IM6037 MJE521 MJE180 BD135 SGS1F444 SGSD00030 e13008 BUT23 2m3771 BUT62 BUW42AP 2n5337 BUW32AP	PDF
JE350 Abstract: je180 MJ13004 TP33C BD325 JE172 BDX48 JE340 bd160 BUT55 Text: INDUSTRY STANDARD SGS-THOMSON BD135 BD136 BD137 BD138 BD139 BD135 BD136 BD137 BD138 BD139 BD140 BD142 BD144 BD157 BD158 BD140 BD159 BD160 BD165 BD166 BD167 BD159 SGS-THOMSON PAGE NEAREST BD157 BD158 2N5878 BD437 BD438 BD439 BD440 BD441 BD442 BD237 BD238 BD168	OCR Scan	BD135 BD136 BD137 BD138 BD139 BD140 BD142 BD144 BD157 BD158 JE350 je180 MJ13004 TP33C BD325 JE172 BDX48 JE340 bd160 BUT55	PDF
u810 diode Abstract: diode u810 flyback uc3842 power supply BUV48 SE u810 sgsd00031 SGSP321 BU508 BU810 Text: SGS-THOMSON 5 7 ,. APPLICATION NOTE HIGH VOLTAGE TRANSISTORS WITH POWER MOS EMITTER SWITCHING INTRODUCTION This paper summarizes the results of an investi gation carried out on power devices with both MOS and BIPOLAR parts working together in the same circuit. The “ emitter drive” configuration was con	OCR Scan	SGSP321, SGSP352 BUV48, BU508A SGSD00035 SGSD00039 SGSD00031, BU810 u810 diode diode u810 flyback uc3842 power supply BUV48 SE u810 sgsd00031 SGSP321 BU508	PDF
2M3055 Abstract: B0W94C mje520 2M5886 13007 hf mj 13008 2n5337 IU 1047 tip120 pnp BD908 Text: G E N E R A L P U R P O S E T R A N S IS T O R S Comple Type mentary V CE0 V CB0 V (V) 'c (A) hFE * 'c (A) V CE V CEsat (V) (V) 9 'c (A) 'b R 1hj-c (mA) fC/W) 1.5 1.17 1.17 1.17 1.17 1399 1047 1047 1053 1053 T O -3 T O -3 T O -39 T O -3 T O -3 1047 1047	OCR Scan	2N3055 2N3715 2N3716 2N3771 2M3772 2N3791 2N3792 2N4234 2N4398 2N4399 2M3055 B0W94C mje520 2M5886 13007 hf mj 13008 2n5337 IU 1047 tip120 pnp BD908	PDF
U/25/20/TN26/15/850/yd 803 ic Abstract: BUX22M JE13005 JE802 TIP+317+data+sheet bu808df1 je200 2n5337 S13003 2N6057 Text: G E N E R A L P U R P O S E T R A N S IS T O R S TY PE ‘c V CE V CEsat 8 A (V) (V) 'o (A) 'b Rthj-c (mA) rc / w ) V CE0 V CB0 'c (V) (V) (A) 22 22 4 BD433 BD434 50 2.00 1.0 0.50 2.00 200 25 40 5 M JE200 M JE210 70 0.50 1.0 0.30 0.50 50 30 30 3 M JE520	OCR Scan	BD433 JE200 JE520 D44H1 D44H2 D44C1 D44C2 D44C3 2N6288 BD435 U/25/20/TN26/15/850/yd 803 ic BUX22M JE13005 JE802 TIP+317+data+sheet bu808df1 2n5337 S13003 2N6057	PDF