EN5581
Abstract: No abstract text available
Text: Ordering number :EN5581 SGD102 GaAs Schottky Barrier Diode C to X Band, Mixer, Modulator Applications Features Package Dimensions • Ultrasmall-sized package. · Less parasitic components, conversion loss. unit:mm 1276 [SGD102] 1:No Contact 2:Anode 3:Cathode
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EN5581
SGD102
SGD102]
EN5581
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D1096
Abstract: SGD102
Text: Ordering number : ENN5581A SGD102 GaAs Schottky Barrier Diode SGD102 C to X Band, Mixer, Modulator Applications Features • • Package Dimensions Ultrasmall-sized package. Less parasitic components, conversion loss. unit : mm 1276A [SGD102] 0.4 2 0.95 0.95
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ENN5581A
SGD102
SGD102]
D1096
SGD102
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SGDJ02
Abstract: SGD102 X817
Text: fo rd e rin g number: EN 5581 _ SGD102 GaÀs Schottky Barrier Diode C to X Band, Mixer, Modulator Applications Features • Ultrasmall-sized package. • Less parasitic componénts, conversion loss. Absolute Maximum Ratings atTa = 25°C Peak Reverse Voltage
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EN5581
SGD102
SGDJ02
SGD102
X817
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sb30-03p
Abstract: 3SK181 DSE015 3SK189
Text: SAfÊYO L,i s t s a n d 2SJ.3SK type, T y p e No. ma r k i ng 2 S J 187 .1 A 2 S J 19 0 J B 2 S J 19 3 .1 c A M 2 S J 284 B M 2 SJ 285 C M 2 SJ 286 2SJ287 J D 2 SJ 288 J E 2SJ289 J F 2SJ316 .1 G 2 SJ 3 3 5 J H 2SJ381 J I 3SK180 3SK181 3SK189 3SK248 3SK251
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2SJ187
2SJ190
2SJ193
2SJ284
2SJ285
2SJ286
2SJ287
2SJ288
2SJ289
2SJ316
sb30-03p
3SK181
DSE015
3SK189
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SGD-100
Abstract: SGD-100T SPD-121 SPD-121A SPD-121M SPD-121P SPD-122P SPD-221 SPD-221A
Text: Packaged GaAs Schottky Barrier Diodes Single diodes Electrical characteristics iT-, = 25 C Absolute maximum ratings Package type Device SPD-121 Ceramic Applications C- to X-band applications, DBS and measuring instruments c, t ÿ Rs Lc @ P -f If Vr IV) lo
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SPD-121
SPD-121M
SPD-121P
SPD-122P
SPD-221
DTA05E
T0202
T0220
SGD-100
SGD-100T
SPD-121A
SPD-221A
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SPD221P
Abstract: No abstract text available
Text: SM YO Packaged Type GaAs Schottky Barrier Diodes The Sanyo SPD S e r i e s a r e pa cka ge d ty pe GaAs S c h o t t k y b a r r i e r d i o d e s d e s i g n e d f o r c o n v e r t e r s , o p e r a t e d i n th e X band 8 . 2 m o d u l a t o r s , d e t e c t o r s t h a t can be
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/Ta-25fc
SGD100T)
SGD102T)
MT930622TR
SPD221P
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2SK22
Abstract: SGF23
Text: 2SK.2SJ Ty p e Lists for* Type No . 1nd ioat 1on on Di odes and Hal 1 E 1ements. type, 3SK,SVC,pin d i o d e S . B . D . G a A s SBD, FET SW D i o d e No. 2SK242 2SK283 2 SK 303 2SK436 2SK443 2 SK 53 6 2SK543 2SK545 2SK771 2 SK 84 8 2SK93 1 2SK932 2SK968 2SK10 65
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2SK242
2SK283
2SK436
2SK443
2SK543
2SK545
2SK771
2SK93
2SK932
2SK968
2SK22
SGF23
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SPD221P
Abstract: SPD221R sanyo transistor SGD102 SGD102T SPD121 MCP6 Marking sanyo SPD121P SPD122P SPD221
Text: S A f/ Y O GaAs Di odes 1 j f c GaAs Schot tky Bar-r-ier Di odes Packaged Type The Sanyo SPD Series are packaged type GaAs Schottky barrier diodes designed for converters, modulators,detectors that can be operated in the X band (8.2 to 12.4GHz) and KU band (12.4 to 18.0GHz).
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SGD102,
SGD102T)
Ratings-126
T0-126LP
T0-220CI
T0-220ML
SC-67,
OT-186)
O-220FIÂ
SC-67KS0T-189}
SPD221P
SPD221R
sanyo transistor
SGD102
SGD102T
SPD121
MCP6 Marking sanyo
SPD121P
SPD122P
SPD221
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SHS210
Abstract: SHS361
Text: Beam-lead GaAs Schottky Barrier Diodes Single diodes Absolute maximum ratings Device Application Electrical characteristics Ta = 25 deg. C Vr (V) *F (mA) Tm (teg. C) Vr @ Ir Vr (V) IB <UA) Ct Vf @ If Vf (V) If (mA) Ct (pF) @ » f H« @ If Rs (Q) If (mA)
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SBL-12Ì
SBL-801«
SBL-802*
SBL-803®
SBL-804»
SBL-221®
SHS264
SHS311
SHS320
SHS330
SHS210
SHS361
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d1684
Abstract: C3788 c4217 d1047 c2078 C4161 D1651 D1682 k2043 K1460
Text: Transistors Type Number SAftYO Index *:New products for FEB added. Type No. Package Page Type No. 2SA Typi T0220 2SA1011 NP Al 016,1 SPA A] 177 NP A 1207 MP Al 208 T0126 Al 209 A ’237 DP6A, B il A: 238 it A! 239 il Ax 240 NP A: 246 T0126 A: 248 h A. 249
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2SA1520
A1522
A1523
A1524
A1525
A1526
A1527
A1528
A1536
A1537
d1684
C3788
c4217
d1047
c2078
C4161
D1651
D1682
k2043
K1460
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sma3001
Abstract: SGF25
Text: SA\YO New Microwave Device Product Line P D C for P H S f o r t e r m ¡ n a ! 1.9 G H z te r m in a / ( 8 0 0 M H z ) P PW e r A m p . w * S P F2 020 A ¡ li t *I fitter SPM2001A * S MA 3Q A nt . S. W 2SC5534 Low > B uffer Amo «SMA30QI Noi«e Amp. Pupi«»«''
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SPM2001A
2SC5534
SMA30QI
SPM0103A
SPM3202
20dBm
SPM3205
SPM3252
24dBm
sma3001
SGF25
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SPD-221
Abstract: No abstract text available
Text: SAfiYO G a A s Di o d e s 1 ale GaAs Schottky P a c k a g e d 'I'ype B a r r 1 e r Di o d e s The Sanyo SPD Se ri e s a re packaged type GaAs Schottky b a r r i e r diodes designed fo r co nverters, modul at o rs , d e t e c t o r s th at can be operated in the X band (8.2 to 12.4GHz) and KU band (12.4 to 18. 0GHz).
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SGD102,
SGD102T)
SBL801A,
SBL802A,
SBL803A,
SBL804A,
10sec
11i-wave,
SVD101
SVD102
SPD-221
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d1878
Abstract: D1887 C4106 D1880 D1825 transistors D1878 c3987 C4161 D1651 k1459
Text: Transistors Type Number SAVYO In dex *:New products for Type No. Package Page Type No. Package Page Type No. Package 2SA Type NP 2SA1016.il A1177 SPA AI207 NP A1208 MP A1209 T0126 A 1246 NP A 1248 T0126 il A1249 A 1252 CP A 1253 SPA A1256 CP il Al 257 A1258
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A1527
A1528
A1537
A1540
A1573
A1574
A1575
A1580
A1590
A1607
d1878
D1887
C4106
D1880
D1825
transistors D1878
c3987
C4161
D1651
k1459
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