SA412
Abstract: 945NP-1049 IMMOBILIZER Antenna Coil Antenna Coil MAGNETIC CORE CATALOG 945NP-1055
Text: Transponder Coils for Surface Mounting TYPE SA412 面実装用ﾄﾗﾝｽﾎﾟﾝﾀﾞｰコイル TYPE SA412 Inductance Range: 0.5~8.0mH SA412 Recommended Patterns for SMT FEATURES / 特 長 z High reliability conforms to automotive applications. z Encapsulated core and winding for anti-shock
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SA412
945NP-1044
SA412
945NP-1049
IMMOBILIZER Antenna Coil
Antenna Coil
MAGNETIC CORE CATALOG
945NP-1055
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sa3d14
Abstract: 70MH
Text: TYPE Transponder Coils for Surface Mounting SA412B SA3D14 づ け 面実装用 トランスポンダコイル TYPE SA412B Inductance Range: 1.0~8.2mH TYPE SA3D14 Frequency Range: ~7.0mH SA412B 3.2 2.5 4.0 2.3 3.4 3.6 Max. Marking 13.9 0.7 12.0 10.2 (Unit: mm)
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SA412B
SA3D14
SA412B
SA3D143
1088NP-102J
1088NP-122J
sa3d14
70MH
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Untitled
Abstract: No abstract text available
Text: Single Channel Single Phase Bi-directional Energy Metering IC with Instantaneous Frequency Output ICDC - a division of SA4120A FEATURES 1 1 1 1 Meets the IEC62053, CBIP-88 and IS137799-1999 specification requirements for Class 1 AC static watthour meters for active energy
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SA4120A
IEC62053,
CBIP-88
IS137799-1999
70ppm/Â
10ppm/Â
SA2002H
SA4120A
SPEC-3094
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SA452
Abstract: SA336 SA424 120R S29GL512N SA487 EE8000 a78000a7ffff c58000c5ffff SA4871
Text: Am29LV2562M Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29GL512N supersedes Am29LV2562M and is the factory-recommended migration path. Please refer to the S29GL512N Data Sheet for specifications and ordering information. Availability of this
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Am29LV2562M
S29GL512N
S29GL512N
SA452
SA336
SA424
120R
SA487
EE8000
a78000a7ffff
c58000c5ffff
SA4871
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Spansion S29GL512N11
Abstract: No abstract text available
Text: S29GLxxxN MirrorBitTM Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit process technology ADVANCE INFORMATION Datasheet Distinctive Characteristics Architectural Advantages
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S29GLxxxN
S29GL512N,
S29GL256N,
S29GL128N
128-word/256-byte
8-word/16-byte
S29GLxxxN
27631sb2
Spansion S29GL512N11
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asme SA388
Abstract: gl128m A2113 S29GL256 E78000 S29GL128N TSOP56 S29GL128N sa32sa35 S29GLxxxM BGA-63
Text: S29GL-M MirrorBitTM フラッシュファミリ S29GL256M，S29GL128M，S29GL064M，S29GL032M 256M ビット，128M ビット，64M ビット，および 32M ビット， 3.0V 単一電源，ページモードフラッシュメモリ 0.23µm MirrorBit プロセステクノロジ
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S29GL-M
S29GL256MS29GL128MS29GL064MS29GL032M
S29GL128MS29GL128N
S29GL256MS29GL256N
S29GLxxxN
00-B-5
S29GL032M
LAA064
asme SA388
gl128m
A2113
S29GL256
E78000
S29GL128N
TSOP56 S29GL128N
sa32sa35
S29GLxxxM
BGA-63
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120R
Abstract: C8800
Text: Am29LV2562M Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
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Am29LV2562M
120R
C8800
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l256mh113
Abstract: L256ML123R
Text: Am29LV256M Data Sheet September 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
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Am29LV256M
l256mh113
L256ML123R
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Untitled
Abstract: No abstract text available
Text: S29GL-N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit Process Technology S29GL-N Cover Sheet Data Sheet This product family has been retired and is not recommended for designs. For new and current designs,
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S29GL-N
S29GL512N,
S29GL256N,
S29GL128N
S29GL-N
S29GL128P,
S29GL256P,
S29GL512P
S29GL128N,
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L256MH113R
Abstract: L256ML113R
Text: Am29LV256M Data Sheet -XO\ 7KH IROORZLQJ GRFXPHQW VSHFLILHV 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG 0LFUR 'HYLFHV DQG XMLWVX $OWKRXJK WKH GRFXPHQW LV PDUNHG ZLWK WKH QDPH RI WKH FRPSDQ\ WKDW RULJ LQDOO\ GHYHORSHG WKH VSHFLILFDWLRQ WKHVH SURGXFWV ZLOO EH RIIHUHG WR FXVWRPHUV RI ERWK $0' DQG
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Am29LV256M
L256MH113R
L256ML113R
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Untitled
Abstract: No abstract text available
Text: S29NS-P MirrorBit Flash Family S29NS512P, S29NS256P, S29NS128P 512/256/128 Mb 32/16/8 M x 16 bit , 1.8V Burst Simultaneous Read/Write, Multiplexed MirrorBit Flash Memory Data Sheet S29NS-P MirrorBit® Flash Family Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion
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S29NS-P
S29NS512P,
S29NS256P,
S29NS128P
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a22t
Abstract: S19G S29GL-N
Text: S29GL-N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology Data Sheet Notice to Readers: This document states the current technical specifications
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S29GL-N
S29GL512N,
S29GL256N,
S29GL128N
a22t
S19G
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S29GL-N
Abstract: 1E300
Text: S29GL512/256/128N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology ADVANCE INFORMATION Data Sheet Notice to Readers: The Advance Information status indicates that this
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S29GL512/256/128N
S29GL512N,
S29GL256N,
S29GL128N
S29GL-N
1E300
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s29gl032m10tair
Abstract: No abstract text available
Text: S29GLxxxM MirrorBitTM Flash Family S29GL256M, S29GL128M, S29GL064M, S29GL032M 256 Megabit, 128 Megabit, 64 Megabit, and 32Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology Datasheet PRELIMINARY Distinctive Characteristics
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S29GLxxxM
S29GL256M,
S29GL128M,
S29GL064M,
S29GL032M
32Megabit,
128-word/256-byte
8-word/16-byte
BGA-80P-M02
s29gl032m10tair
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SA293
Abstract: SA273 988000
Text: DATASHEET Am29LV256M 256 Megabit 16 M x 16-Bit/32 M x 8-Bit MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Single power supply operation — 3 volt read, erase, and program operations
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Am29LV256M
16-Bit/32
16-word/32-byte
56-pi
SA293
SA273
988000
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L256ML
Abstract: SA4871 BD8000 sa340 transistor SA427 SA370 8A000 740-0007 Am29LV256 SA36-110
Text: ADVANCE INFORMATION Am29LV256M 256 Megabit 16 M x 16-Bit/32 M x 8-Bit MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Single power supply operation — 3 volt read, erase, and program operations
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Am29LV256M
16-Bit/32
128-word/256-byte
8-word/16-byte
L256ML
SA4871
BD8000
sa340
transistor SA427
SA370
8A000
740-0007
Am29LV256
SA36-110
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29gl064
Abstract: TSR056 BGA-63 S29GL032A S29GL032M S29GL064A S29GL064M S29GL128M TSOP-20 S29GL256M
Text: S29GL-M MirrorBitTM Flash Family S29GL256M, S29GL128M, S29GL064M, S29GL032M 256 Megabit, 128 Megabit, 64 Megabit, and 32 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 0.23 µm MirrorBit Process Technology Data Sheet This product family has been retired and is not recommended for designs. For new and current designs, S29GL032A, S29GL064A, S29GL128N, and S29GL256N supersede S29GL032M,
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S29GL-M
S29GL256M,
S29GL128M,
S29GL064M,
S29GL032M
S29GL032A,
S29GL064A,
S29GL128N,
S29GL256N
S29GL032M,
29gl064
TSR056
BGA-63
S29GL032A
S29GL032M
S29GL064A
S29GL064M
S29GL128M
TSOP-20
S29GL256M
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2B60000
Abstract: S70GL01GN00 S29GL512N gl512 2200-0002
Text: S70GL01GN00 MirrorBit Flash 1024 Megabit, 3.0 Volt-only Page Mode Flash Memory Featuring 110 nm MirrorBit™ Process Technology ADVANCE INFORMATION Data Sheet Notice to Readers: The Advance Information status indicates that this document contains information on one or more products under development
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S70GL01GN00
2B60000
S29GL512N
gl512
2200-0002
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sa330
Abstract: E3800 spansion top marking Am29LV256M Am29LV256MH S29GL256M
Text: Am29LV256M Data Sheet For new designs, S29GL256M supercedes Am29LV256MH/L and is the factory-recommended migration path for this device. Please refer to the S29GLxxxM Family Datasheet for specifications and ordering information. July 2003 The following document specifies Spansion memory products that are now offered by both Advanced
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Am29LV256M
S29GL256M
Am29LV256MH/L
S29GLxxxM
sa330
E3800
spansion top marking Am29LV256M
Am29LV256MH
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S29GL128P
Abstract: a8800 S29GL032 S29GL256p S29GL032A S29GL032M S29GL064A S29GL064M S29GL128M S29GL256M
Text: S29GL-M MirrorBitTM Flash Family S29GL256M, S29GL128M, S29GL064M, S29GL032M 256 Megabit, 128 Megabit, 64 Megabit, and 32 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 0.23 µm MirrorBit Process Technology Data Sheet This product family has been retired and is not recommended for designs. For
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S29GL-M
S29GL256M,
S29GL128M,
S29GL064M,
S29GL032M
S29GL032A,
S29GL064A,
S29GL128P,
S29GL256P
S29GL032M,
S29GL128P
a8800
S29GL032
S29GL032A
S29GL032M
S29GL064A
S29GL064M
S29GL128M
S29GL256M
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S29GL512N datasheet
Abstract: GL128n s29gl256p S29GL256p spansion S29GL512P Spansion obsolescence S29GL S29GL128N S29GL128P S29GL256N S29GL512N
Text: S29GL-N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit Process Technology S29GL-N Cover Sheet Data Sheet For new designs, S29GL512P, S29GL256P, and S29GL128P supersedes S29GL512N, S29GL256N, and
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S29GL-N
S29GL512N,
S29GL256N,
S29GL128N
S29GL-N
S29GL512P,
S29GL256P,
S29GL128P
S29GL512N datasheet
GL128n
s29gl256p
S29GL256p spansion
S29GL512P
Spansion obsolescence S29GL
S29GL128N
S29GL256N
S29GL512N
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gl256N
Abstract: S29GL512N datasheet S29GL-N S19GL128N 31df* 33H s29gl512 FBGA 8 x 14 package tray S29GL date code marking S29GL128N S29GL256N
Text: S29GL-N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology Data Sheet Notice to Readers: This document states the current technical specifications
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S29GL-N
S29GL512N,
S29GL256N,
S29GL128N
S29GL-N
gl256N
S29GL512N datasheet
S19GL128N
31df* 33H
s29gl512
FBGA 8 x 14 package tray
S29GL date code marking
S29GL128N
S29GL256N
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2n7588
Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Text: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.
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LDD-C514R1
Abstract: LDD-A514R1 LDQ-N516R1-RA LDQ-M512R1 IFR 630 MF 1T4 tube RGB DOT matrix 8x8 LED common anode LDS-AD16RI LDQ-N516R1 LDS-A3914RI
Text: le d -d is p la y s ta b le o f c o n te n ts TABLE OF CONTENTS Page s GENERAL INFORMATION .2 PART NUMBERING S Y S T E M . 3 INTENSITY S E LE C T IO N . . . 5 ELECTRO/OPTICAL LED CHIP
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