Untitled
Abstract: No abstract text available
Text: LT3012B 250mA, 4V to 80V Low Dropout Micropower Linear Regulator FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO Wide Input Voltage Range: 4V to 80V Low Quiescent Current: 40µA Low Dropout Voltage: 400mV Output Current: 250mA No Protection Diodes Needed
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LT3012B
250mA,
400mV
250mA
16-Lead
12-Pin
O220-5,
S0T-223,
LT1964
200mA,
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diode d1n914
Abstract: d1n914 d1n914 datasheet FE16 LT3013 LT3013EDE LT3013EFE
Text: LT3013 250mA, 4V to 80V Low Dropout Micropower Linear Regulator with PWRGD U FEATURES DESCRIPTIO • The LT 3013 is a high voltage, micropower low dropout linear regulator. The device is capable of supplying 250mA of output current with a dropout voltage of 400mV. Designed for use in battery-powered or high voltage systems, the low quiescent current 65µA operating and 1µA
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LT3013
250mA,
250mA
400mV.
LT3013
400mV
LT3012
TSSOP-16E
diode d1n914
d1n914
d1n914 datasheet
FE16
LT3013EDE
LT3013EFE
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LTZF
Abstract: LT3010 LT3010-5 LT3010EMS8E LT3010EMS8E-5 d1n914 DIODE LTCLP LT3010HMS8E-5
Text: LT3010/LT3010-5 50mA, 3V to 80V Low Dropout Micropower Linear Regulator FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION Wide Input Voltage Range: 3V to 80V Low Quiescent Current: 30µA Low Dropout Voltage: 300mV Output Current: 50mA
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LT3010/LT3010-5
300mV
LT3010-5)
LT3010)
LT3010
LT1963/LT1963A
O220-5,
S0T-223,
LT1964
200mA,
LTZF
LT3010-5
LT3010EMS8E
LT3010EMS8E-5
d1n914 DIODE
LTCLP
LT3010HMS8E-5
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d1n914
Abstract: diode d1n914 FE16 LT3013 LT3013EDE
Text: LT3013 250mA, 4V to 80V Low Dropout Micropower Linear Regulator with PWRGD DESCRIPTION FEATURES n n n n n n n n n n n n n Wide Input Voltage Range: 4V to 80V Low Quiescent Current: 65 A Low Dropout Voltage: 400mV Output Current: 250mA No Protection Diodes Needed
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LT3013
250mA,
400mV
250mA
16-Lead
12-Pin
LT3014/HV
100VRMS,
TSSOP-16E
DFN-12
d1n914
diode d1n914
FE16
LT3013
LT3013EDE
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schematic diagram atx Power supply 500w
Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455
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P462-ND
P463-ND
LNG295LFCP2U
LNG395MFTP5U
US2011)
schematic diagram atx Power supply 500w
pioneer PAL 012A
1000w inverter PURE SINE WAVE schematic diagram
600va numeric ups circuit diagrams
winbond bios 25064
TLE 9180 infineon
smsc MEC 1300 nu
TBE schematic diagram inverter 2000w
DK55
circuit diagram of luminous 600va UPS
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LTZF
Abstract: ltaef UA2480 LT3010 LT3010-5 LT3010EMS8E LT3010EMS8E-5
Text: LT3010/LT3010-5 50mA, 3V to 80V Low Dropout Micropower Linear Regulator U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Wide Input Voltage Range: 3V to 80V Low Quiescent Current: 30µA Low Dropout Voltage: 300mV Output Current: 50mA
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LT3010/LT3010-5
300mV
LT3010-5)
LT3010)
LT1963/LT1963A
O220-5,
S0T-223,
LT1964
200mA,
3010f
LTZF
ltaef
UA2480
LT3010
LT3010-5
LT3010EMS8E
LT3010EMS8E-5
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CS5170
Abstract: mps2112 MPS2112ZL1 100A 300V IGBT MC3346P CS4124YDW16 ON Semiconductor PRICE BOOK 12V to 220V smps inverter bd234 igbt ac motor speed control
Text: SGD501/D REV 8, January 5, 2002 NORTH AMERICA SALES AND DISTRIBUTION ON Semiconductor PRICE BOOK THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section EFFECTIVE DATE: JANUARY 5, 2002 General Information Elimination Of Ozone Depleting Chemicals . . . .
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SGD501/D
Janua667
CS5170
mps2112
MPS2112ZL1
100A 300V IGBT
MC3346P
CS4124YDW16
ON Semiconductor PRICE BOOK
12V to 220V smps inverter
bd234
igbt ac motor speed control
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Untitled
Abstract: No abstract text available
Text: LT3013B 250mA, 4V to 80V Low Dropout Micropower Linear Regulator with PWRGD FEATURES n n n n n n n n n n n n DESCRIPTION Wide Input Voltage Range: 4V to 80V Low Quiescent Current: 65µA Low Dropout Voltage: 400mV Output Current: 250mA No Protection Diodes Needed
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PDF
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LT3013B
250mA,
400mV
250mA
16-Lead
12-Pin
O220-5,
S0T-223,
LT1964
200mA,
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diode d1n914
Abstract: MURATA* 50 c 16 d1n914 FE16 LT3013 LT3013EDE LT3013EFE
Text: LT3013 250mA, 4V to 80V Low Dropout Micropower Linear Regulator with PWRGD FEATURES DESCRIPTION • The LT 3013 is a high voltage, micropower low dropout linear regulator. The device is capable of supplying 250mA of output current with a dropout voltage of 400mV. Designed
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LT3013
250mA,
250mA
400mV.
LT3013
400mV
LT3014/HV
100VRMS,
TSSOP-16E
diode d1n914
MURATA* 50 c 16
d1n914
FE16
LT3013EDE
LT3013EFE
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bruel kjaer 1051
Abstract: No abstract text available
Text: DEMO MANUAL DC178 HIGH SPEED ADC LTC1418 200ksps 14-Bit A/D Converter Demo Board DESCRIPTIO U The LTC 1418 is a 4µs, 200ksps sampling A/D converter that draws 15mW. The LTC1418 demo board provides the user with a way to evaluate the LTC1418 A/D converter.
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DC178
LTC1418
200ksps)
14-Bit
200ksps
LTC1418
bruel kjaer 1051
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1500w audio amplifier circuit
Abstract: Schottky Diode 80V 6A 1500w PWM 220v C106MG marking code SS SOT23 tl494cn inverter datasheet smps 1500W MMSZ5231BT1G dc 220v motor speed control circuit with scr NCP1200P60G
Text: SGD501/D REV 19, October 9, 2004 NORTH AMERICA SALES AND DISTRIBUTION ON Semiconductor PRICE BOOK THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION − Please see General Information Section EFFECTIVE DATE: OCTOBER 9, 2004 General Information ON Semiconductor Standard Policies
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SGD501/D
74VCX16373DT
74VCX16373DTR
74VCX16374DT
16BIT
74VCX16374DTR
80SQ045N
80SQ045NRL
1500w audio amplifier circuit
Schottky Diode 80V 6A
1500w PWM 220v
C106MG
marking code SS SOT23
tl494cn inverter datasheet
smps 1500W
MMSZ5231BT1G
dc 220v motor speed control circuit with scr
NCP1200P60G
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d1n914
Abstract: diode d1n914 LT3012HFE d1n914 DIODE d1n914 datasheet FE16 LT3012 LT3012EDE LT3012EFE 3012hfe
Text: LT3012 250mA, 4V to 80V Low Dropout Micropower Linear Regulator DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Wide Input Voltage Range: 4V to 80V Low Quiescent Current: 40 A Low Dropout Voltage: 400mV Output Current: 250mA No Protection Diodes Needed
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LT3012
250mA,
400mV
250mA
16-Lead
12-Pin
wLT3013/LT3013H
TSSOP-16E
d1n914
diode d1n914
LT3012HFE
d1n914 DIODE
d1n914 datasheet
FE16
LT3012
LT3012EDE
LT3012EFE
3012hfe
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diode d1n914
Abstract: d1n914 d1n914 datasheet FE16 LT3012 LT3012EDE LT3012EFE 4.5v to 100v input regulator
Text: LT3012 250mA, 4V to 80V Low Dropout Micropower Linear Regulator U FEATURES DESCRIPTIO • The LT 3012 is a high voltage, micropower low dropout linear regulator. The device is capable of supplying 250mA of output current with a dropout voltage of 400mV. Designed for use in battery-powered or high voltage systems, the low quiescent current 40µA operating and 1µA
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Original
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PDF
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LT3012
250mA,
250mA
400mV.
LT3012
400mV
LT3013
TSSOP-16E
diode d1n914
d1n914
d1n914 datasheet
FE16
LT3012EDE
LT3012EFE
4.5v to 100v input regulator
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Untitled
Abstract: No abstract text available
Text: LT3011 50mA, 3V to 80V Low Dropout Micropower Linear Regulator with PWRGD DESCRIPTION FEATURES n n n n n n n n n n n n n n Wide Input Voltage Range: 3V to 80V Low Quiescent Current: 46µA Low Dropout Voltage: 300mV Output Current: 50mA PWRGD Flag with Programmable Delay
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LT3011
300mV
12-Lead
10-Pin
300mV
O-220,
OT-223,
LT3080-1
3011f
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Untitled
Abstract: No abstract text available
Text: Philips Components D a tasheet status Product specification date of issue Apr* 1991 BDS949/951/953/9S5 NPN silicon epitaxial base power transistors PINNING -SO T223 DESCRIPTION NPN silicon epitaxial base transistors in a miniature SMD envelope S0T223 intended for general
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BDS949/951/953/9S5
S0T223)
BDS950/952/954/956.
BDS949
BDS951
BDS953
BDS955
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Untitled
Abstract: No abstract text available
Text: S0T223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET BSP120 ABSOLUTE MAXIMUM RATINGS PARAMETER VALUE SYMBOL Drain-Source Voltage V DS Continuous Drain Current at Ta = 25°C UNIT 200 V 250 mA mA Pulse Drain Current 'dm 800 Gate-Source Voltage v gs ±20 V 1.5
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S0T223
BSP120
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Untitled
Abstract: No abstract text available
Text: N AUER PHI LIP S/ DIS CR ETE bRE D • bbS3R31 0D30727 33R « A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications.
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bbS3R31
0D30727
OT223
BUK482-60A
QD3D731
bb53T31
D03D732
OT223.
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transistor marking code 325
Abstract: BSP110 marking r8v
Text: • 1^53^31 0G25502 flS5 H A P X N AMER PHILIPS/ DIS CRETE BSP110 fc>7E D N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a m iniature SOT223 envelope and designed fo r use in telephone ringer circuits and fo r application w ith relay, high-speed and line transformer
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0G25502
BSP110
OT223
7Z94040
transistor marking code 325
BSP110
marking r8v
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Untitled
Abstract: No abstract text available
Text: ADJUSTABLE PRECISION ZENER SH U N T REGULATOR ZHT431 IS S U E 1 - FEBRUARY 1996_ DEVICE DESCRIPTION FEATURES The ZHT431 is a three terminal adjustable shunt regulator offering excellent temperature stability and output current handling capability up to 100mA. The device offers extended
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ZHT431
ZHT431
100mA.
OT223
OT223
ZHT431N802
ZHT43102
ZHT431N801
ZHT43101
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buk7530-55
Abstract: mosfet-n SOT166 TOPFET buk7530
Text: SELECTION GUIDE Page TOPFETs 14 PowerMOS Transistors 16 Insulated Gate Bipolar Transistors 23 Philips Semiconductors TOPFETs VDS Selection Guide @ID FUSION O) (V) (A) Id w Pd (W) TYPE NUMBER TECHNOLOGY ENVELOPE 50 0.028 25 50 125 BUK106-50L TOPFET SOT263
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56-800A
BUK446-800A
BUK456-800B
BUK446-800B
BUK454-800A
BUK444-800A
BUK454-800B
BUK444-800B
BUK456-1000B
BUK446-1000B
buk7530-55
mosfet-n
SOT166
TOPFET
buk7530
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S0T23-5
Abstract: TSS0P16 S0T23 sc 6038 LM4765T LM2710 M1117 SDT23 TSS0P14 LM1117
Text: micro SM D SC-70 SOT-23 'M R * s y ? ï$ 0 JA 480 °C/W 0JA 240 "C/W PSOP-8 SOT-223 0 J A 220 °C/W SO ( /J X S 0 M * 0 J A 43 °C/W 0 J A 100-190 °c/w 0JA75-11O oC/W ♦ * TO-263 8 31 ö l TSSOP 0 J A 60-130 “C /W (M SO P) 0 J A 35-60 "C/W 0 j a 220 °C/W
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SC-70
OT-23
6JA100-190
OT-223
ejA75-110Â
O-263
CSP-32
6JA88
T0-220
O-252
S0T23-5
TSS0P16
S0T23
sc 6038
LM4765T
LM2710
M1117
SDT23
TSS0P14
LM1117
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comparator
Abstract: T092 ZSM560 S0T-223 ScansUX38
Text: SUPPLY VOLTAGE MONITOR ZSM560 ISSUE 2 - NOVEMBER 1995 DEVICE DESCRIPTION FEATURES The ZSM560 is a three terminal under voltage monitor circuit for use in microprocessor systems. The threshold voltage of the device has been set to 4.6 volts making it ideal for 5
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ZSM560
comparator
T092
S0T-223
ScansUX38
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W1P 59 transistor
Abstract: W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn
Text: Philips S em iconductors S urface m oun ted sem ico n d u cto rs C on ten ts PART A page SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors
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197/197X
S310N
W1P 59 transistor
W1p 48 TRANSISTOR
transistor w1P 83
ICM AP 1703
transistor SMD marked RNW
transistor BD139 PH 71
W1P 66 transistor
transistor w1P 91
Pnp transistor smd ba rn
w1p npn
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PHP3055E
Abstract: No abstract text available
Text: Philips Semiconductors PowerMOS Transistors including TOPFETs and IGBTs Introduction TYPE NUMBERS Example: BUK7508-55 is a standard level TrenchMOS device in a SOT78 with an RDs on maximum rating of 8mOhms and a 55V maximum drain-source rating. Philips Power MOSFETs and related products can be
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BUK7508-55
PHP3055E
T0220)
OT186A
S0T223
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