RJP6016JPE Search Results

RJP6016JPE Result Highlights (1)

Part	ECAD Model	Manufacturer	Description	Download	Buy
RJP6016JPE-00#J3		Renesas Electronics Corporation	Insulated-Gate Bipolar Transistors (IGBT)

RJP6016JPE Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: Preliminary Datasheet RJP6016JPE 600 V - 40 A- N Channel IGBT High Speed Power Switching R07DS0878EJ0100 Rev.1.00 Sep 19, 2012 Features • For Automotive application  AEC-Q101 compliant  Low collector to emitter saturation voltage. VCE sat = 1.7 V typ. (IC = 20 A, VGE = 15 V, Ta = 25 C)	Original	PDF	RJP6016JPE AEC-Q101 R07DS0878EJ0100 PRSS0004AE-B

Catalog Datasheet

MFG & Type

PDF

Document Tags

Untitled

Abstract: No abstract text available
Text: Preliminary Datasheet RJP6016JPE 600 V - 40 A- N Channel IGBT High Speed Power Switching R07DS0878EJ0100 Rev.1.00 Sep 19, 2012 Features • For Automotive application  AEC-Q101 compliant  Low collector to emitter saturation voltage. VCE sat = 1.7 V typ. (IC = 20 A, VGE = 15 V, Ta = 25 C)

Original

PDF

RJP6016JPE AEC-Q101 R07DS0878EJ0100 PRSS0004AE-B