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    RJK6024DPE Search Results

    RJK6024DPE Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    RJK6024DPE-00#J3 Renesas Electronics Corporation Nch Single Power Mosfet 600V 0.4A 42000Mohm LDPAK(S)-(1)/To-263 Visit Renesas Electronics Corporation

    RJK6024DPE Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RJK6024DPE-00#J3 Renesas Electronics FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 0.4A LDPAK Original PDF

    RJK6024DPE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK6024DPE 600V - 0.4A - MOS FET High Speed Power Switching R07DS0424EJ0200 Rev.2.00 Feb 27, 2012 Features • Low on-resistance RDS on = 28  typ. (at ID = 0.2 A, VGS = 10 V, Ta = 25C)  Low leakage current  High speed switching


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    RJK6024DPE R07DS0424EJ0200 PRSS0004AE-B PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK6024DPE 600V - 0.4A - MOS FET High Speed Power Switching R07DS0424EJ0200 Rev.2.00 Feb 27, 2012 Features • Low on-resistance RDS on = 28  typ. (at ID = 0.2 A, VGS = 10 V, Ta = 25C)  Low leakage current  High speed switching


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    RJK6024DPE R07DS0424EJ0200 PRSS0004AE-B 25Cctronics PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK6024DPE Silicon N Channel MOS FET High Speed Power Switching R07DS0424EJ0100 Rev.1.00 Jun 06, 2011 Features • Low on-resistance RDS on = 28 Ω typ. (at ID = 0.2 A, VGS = 10 V, Ta = 25°C) • Low leakage current • High speed switching


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    RJK6024DPE R07DS0424EJ0100 PRSS0004AE-B PDF

    RJP63k2

    Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
    Text: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching


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    R07CS0003EJ0100 RJP63k2 rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606 PDF

    RJJ0319DSP

    Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram
    Text: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?


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    R07CS0003EJ0200 RJJ0319DSP BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram PDF

    rjp6065

    Abstract: RJP6006 rjp3053 rjh60f5 TRANSISTOR SMD MARKING CODE jg BCR1AM-12A equivalent RJH60F7 RJP3063 triac kt 207 600v RJP6006DPK
    Text: 2009.12 Renesas Discrete General Catalog Transistor/Diode/Triac/ Thyristor www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Amplification Transistors Power Devices Non-MOS Low-voltage MOS Low switching loss and high speed High-voltage MOS Package current capacity and thermal resistance


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    rjh60f5

    Abstract: RJH60F7 R2J240 R2J24020 HAT2292C HAT2286C HAT1146C RJH60 rjh60d7 RJH60F7ADPK
    Text: Rev.27.01 2010.2.2 Renesas Power MOS FETs, IGBTs, Triacs, and Thyristors General Presentation www.renesas.com Renesas Power MOS FETs, IGBTs, Triacs, and Thyristors General Presentation January 2010 Standard Product Business Group 2/2/2010 Rev.27.01 2010. Renesas Technology Corp., All rights reserved.


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    REJ13G0003-2701 rjh60f5 RJH60F7 R2J240 R2J24020 HAT2292C HAT2286C HAT1146C RJH60 rjh60d7 RJH60F7ADPK PDF