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ROHM Semiconductor R6006ANX MOSFET N-CH 600V 6A TO220FM
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	R6006ANX	Bulk			500	1 - 10 - 100 - 1000 $1.20514 10000 $1.20514	Buy Now
Mouser Electronics	R6006ANX					1 - 10 - 100 - 1000 - 10000 -	Get Quote
Verical	R6006ANX		500		50	1 - 10 - 100 $1.4061 1000 $1.3264 10000 $1.3264	Buy Now
Future Electronics	R6006ANX	Bulk		23 Weeks	500	1 - 10 - 100 - 1000 $0.924 10000 $0.924	Buy Now
Quest Components	R6006ANX		424			1 $3.548 10 $3.548 100 $3.548 1000 $1.4636 10000 $1.4636	Buy Now

CoreStaff Co Ltd	R6006ANX		500			1 $1.862 10 $1.532 100 $1.004 1000 $0.887 10000 $0.887	Buy Now
	R6006ANX		30			1 $1.862 10 $1.532 100 $1.004 1000 $0.887 10000 $0.887	Buy Now

R6006ANX Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
R6006ANX		ROHM	10V Drive Nch MOSFET; Package: TO-220FM; Constitution materials list: Packing style: bulk; Package quantity: 500;		Original	PDF
R6006ANX		ROHM	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 6A TO-220FM		Original	PDF

R6006ANX Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
R6006ANX Abstract: No abstract text available Text: 10V Drive Nch MOSFET R6006ANX zDimensions Unit : mm zStructure Silicon N-channel MOSFET TO-220FM φ3.2 10.0 4.5 8.0 1.2 1.3 14.0 2.5 15.0 zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V. 4) Drive circuits can be simple.	Original	PDF	R6006ANX O-220FM R6006ANX
Untitled Abstract: No abstract text available Text: R6006ANX Datasheet Nch 600V 6A Power MOSFET lOutline VDSS 600V RDS on (Max.) 1.2W ID 6A PD 40W TO-220FM (1)(2)(3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.	Original	PDF	R6006ANX O-220FM R1120A
R6006ANX Abstract: No abstract text available Text: R6006ANX R6006ANX Datasheet Nch 600V 6A Power MOSFET lOutline VDSS 600V RDS on (Max.) 1.2W ID 6A PD 40W TO-220FM (1)(2)(3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.	Original	PDF	R6006ANX O-220FM R1120A R6006ANX
Untitled Abstract: No abstract text available Text: R6006ANX Nch 600V 6A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 1.2W ID 6A PD 40W TO-220FM (1)(2)(3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.	Original	PDF	R6006ANX O-220FM R1120A
Untitled Abstract: No abstract text available Text: R6006ANX Nch 600V 6A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 1.2W ID 6A PD 40W TO-220FM (1)(2)(3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.	Original	PDF	R6006ANX O-220FM R1120A
RSD130P10 Abstract: rsd220n06 RDR005N25 RP1E090 RSD130P R6015 RCD040N25 rcd080n25 RSD050N10 R5207AND Text: 2010 ѻકⳂᔩ Discrete Semiconductors MOSFET MOSFET ᦤկ㛑໳ᑨ⫼Ѣᑓ⊯乚ඳⱘPower MOSFETˈҢ⫼Ѣ֓ᨎ䆒໛ⱘǃ 䞛⫼њ㊒ᆚᎹᑣⱘ䍙Ԣᇐ䗮⬉䰏䚼ӊˈࠄ⫼Ѣᓔ݇⬉⑤ⱘǃ催ᬜ⥛ 㗤催य़䚼ӊˈϔᑨ‫ܼׅ‬Ǆ 01 MOSFET Contents	Original	PDF	RUM002N02 RZM002P02 RUE002N02 RZE002P02 RUM002N05 RUE002N05 RZF013P01 RZL025P01 RZR020P01 RW1A013ZP RSD130P10 rsd220n06 RDR005N25 RP1E090 RSD130P R6015 RCD040N25 rcd080n25 RSD050N10 R5207AND
RSD130P10 Abstract: RDR005N25 RCD040N25 rsd220n06 RSY200N05 RSD050N10 RCX100N25 R5207AND RP1E090 rsy200 Text: 2010 Product Catalog Discrete Semiconductors MOSFETs MOSFETs ROHM offers a wide selection of MOSFETs, ranging from ultra-low ON-resistance products utilizing micro-process technology, high efficiency/breakdown units for switching applications, and high power components optimized for commercial/industrial systems.	Original	PDF	5V/60V R0039A 52P6214E RSD130P10 RDR005N25 RCD040N25 rsd220n06 RSY200N05 RSD050N10 RCX100N25 R5207AND RP1E090 rsy200