R07DS1065EJ0100 Search Results

Untitled

Abstract: No abstract text available
Text: Data Sheet N0439N N-channel MOSFET R07DS1065EJ0100 Rev.1.00 Jun 13, 2013 40 V, 90 A, 3.3 mΩ Description This product is N-channel MOS Field Effect Transistors designed for high current switching applications. Features • Super low on-state resistance RDS on = 3.3 mΩ MAX. ( VGS = 10 V, ID = 45 A )