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    N0412

    Abstract: No abstract text available
    Text: Preliminary Data Sheet N0412N R07DS0554EJ0100 Rev.1.00 Nov 07, 2011 N-CHANNEL MOSFET FOR SWITCHING Description The N0412N is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS on = 3.7 mΩ MAX. (VGS = 10 V, ID = 50 A)


    Original     		N0412N R07DS0554EJ0100 N0412N N0412N-S19-AY O-220 N0412 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet N0412N R07DS0554EJ0100 Rev.1.00 Nov 07, 2011 N-CHANNEL MOSFET FOR SWITCHING Description The N0412N is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS on = 3.7 mΩ MAX. (VGS = 10 V, ID = 50 A)


    Original     		N0412N R07DS0554EJ0100 N0412N N0412N-S19-AY O-220 PDF