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    rjp30e2

    Abstract: rjp30e2dpp RJP30E2DPp-M0 RJP30e PRSS0003AF-A r07ds0347ej Rjp30 R07DS0347EJ0200
    Text: Preliminary Datasheet RJP30E2DPP-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0347EJ0200 Rev.2.00 Apr 12, 2011 Features • • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ


    Original     		PDF RJP30E2DPP-M0 O-220FL R07DS0347EJ0200 PRSS0003AF-A) O-220FL) rjp30e2 rjp30e2dpp RJP30E2DPp-M0 RJP30e PRSS0003AF-A r07ds0347ej Rjp30

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJP30E2DPP-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0347EJ0200 Rev.2.00 Apr 12, 2011 Features • • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ


    Original     		PDF RJP30E2DPP-M0 R07DS0347EJ0200 O-220FL PRSS0003AF-A) O-220FL)

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJP30E2DPP-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0347EJ0200 Rev.2.00 Apr 12, 2011 Features • • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ


    Original     		PDF RJP30E2DPP-M0 R07DS0347EJ0200 O-220FL PRSS0003AF-A) O-220FL)